公开(公告)号：US20130013253A1

公开(公告)日：2013-01-10

申请号：US13635600

申请日：2011-03-11

申请人： Seiji Samukawa ,  Kohei Ono ,  Takuya Iwasaki

发明人： Seiji Samukawa ,  Kohei Ono ,  Takuya Iwasaki

IPC分类号： G06F15/00 ,  G01B15/04

CPC分类号： H01J37/32954 ,  G01N21/67 ,  H01L21/31116 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system, a method, and a program for predicting a processing shape by a plasma process by which a process state is measured on a realtime basis based on the result of which the processing shape is predicted. The system includes an apparatus condition DB 21, an incident ion DB 22, an incident radical DB 23, an actual measurement DB 24, a material property and surface reaction DB 25, a trajectory calculation unit 26, and a surface shape calculation unit 27. The trajectory calculation unit 26 calculates the trajectories of the respective ions incident on the surface of the substrate based on information and data obtained from the apparatus condition DB 21, the incident ion DB 22, and the incident radical DB 23 depending on the condition setting of the plasma processing apparatus 10, the respective pieces of data obtained from the actual measurement DB 24 depending on the condition setting of the plasma processing apparatus 10, and the respective pieces of data from the on-wafer monitoring sensor 11. Based on the calculation result by the trajectory calculation unit 26, the surface shape calculation unit 27 calculates the change of the shape by referring to the data stored in the material property and surface reaction DB 25.

摘要翻译： 一种用于通过等离子体处理来预测处理形状的系统，方法和程序，通过该等离子体处理，基于预测处理形状的结果，实时地测量处理状态。 该系统包括装置条件DB 21，入射离子DB 22，入射基团DB 23，实际测量DB 24，材料特性和表面反应DB 25，轨迹计算单元26和表面形状计算单元27。 轨迹计算单元26基于从装置条件DB 21，入射离子DB 22和入射基极DB 23获得的信息和数据，根据条件设置来计算入射在基板表面上的各个离子的轨迹 等离子体处理装置10，根据等离子体处理装置10的条件设置从实际测量DB24获得的各个数据以及来自晶片上监​​视传感器11的各个数据。根据计算结果 通过轨迹计算单元26，表面形状计算单元27通过参考存储在材料道具中的数据来计算形状的变化 磨损和表面反应DB 25。

公开(公告)号：US09620338B2

公开(公告)日：2017-04-11

申请号：US13635600

申请日：2011-03-11

申请人： Seiji Samukawa ,  Kohei Ono ,  Takuya Iwasaki

发明人： Seiji Samukawa ,  Kohei Ono ,  Takuya Iwasaki

IPC分类号： G06F15/00 ,  G01B15/04 ,  H01J37/32 ,  G01N21/67 ,  H01L21/311 ,  H01L21/66

CPC分类号： H01J37/32954 ,  G01N21/67 ,  H01L21/31116 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system, a method, and a program for predicting a processing shape formed by a plasma process, including databases for apparatus condition, incident ion, incident radical, actual measurement, material property and surface reaction, as well as a trajectory calculation unit, and a surface shape calculation unit. The trajectory calculation unit calculates the trajectories of the respective ions incident on the surface of the substrate based on information and data obtained from the databases and from measurement data from an on-wafer monitoring sensor. Based on the calculation result by the trajectory calculation unit, the surface shape calculation unit calculates the change of the shape by referring to the data stored in the material property and surface reaction DB.

公开(公告)号：US08828886B2

公开(公告)日：2014-09-09

申请号：US13440480

申请日：2012-04-05

申请人： Seiji Samukawa ,  Shigeo Yasuhara ,  Shingo Kadomura ,  Tsutomu Shimayama ,  Hisashi Yano ,  Kunitoshi Tajima ,  Noriaki Matsunaga ,  Masaki Yoshimaru

发明人： Seiji Samukawa ,  Shigeo Yasuhara ,  Shingo Kadomura ,  Tsutomu Shimayama ,  Hisashi Yano ,  Kunitoshi Tajima ,  Noriaki Matsunaga ,  Masaki Yoshimaru

IPC分类号： H01L21/312 ,  C09D183/04 ,  H01L21/02 ,  C23C16/48 ,  C23C16/40

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/486 ,  H01L21/02216 ,  H01L21/02277

摘要： Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH3) is 66% or more.

摘要翻译： 公开了由包含Si原子，O原子，C原子和H原子的聚合物形成的低介电常数绝缘膜，其包括其中多个具有SiO结构的碱性分子在直链中键合的直链分子，粘合剂 具有连接多个直链分子的SiO结构的分子。 指示线性型SiO结构的信号的面积比为49％以上，表示Si（CH3）的信号的信号量为66％以上。

公开(公告)号：US07314574B2

公开(公告)日：2008-01-01

申请号：US10484502

申请日：2002-09-24

申请人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

发明人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

IPC分类号： B44C1/22 ,  H01L21/00

CPC分类号： H01J37/32357 ,  H01J37/32422 ,  H01L21/3065 ,  H01L21/67069

摘要： An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.

摘要翻译： 蚀刻装置包括用于保持工件（X）的工件保持器（21），用于在真空室（3）中产生等离子体（30）的等离子体发生器（10,20），设置在真空室 工件保持器（21）和等离子体发生器（10,20）以及设置在真空室（3）中的孔电极（4）上游的栅电极（5）。 孔口电极（4）具有限定在其中的孔（4a）。 蚀刻装置还包括用于在孔电极（4）和栅电极（5）之间施加电压的电压施加单元（25,26），以加速由等离子体发生器（10,20）产生的等离子体（30）的离子 并且将提取的离子通过孔口电极（4）中的孔（4a），以产生具有10eV至50eV的能量的准直中性粒子束。

公开(公告)号：US06909087B2

公开(公告)日：2005-06-21

申请号：US10471743

申请日：2002-03-22

申请人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

发明人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

IPC分类号： B23K15/00 ,  B23K101/40 ,  H01J37/317 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46 ,  H01L21/306 ,  H05H3/00

CPC分类号： H01J37/32082 ,  H01J37/317 ,  H01J37/32357 ,  H01J37/32706 ,  H05H1/46

摘要： A plasma generator generates positive ions and negative ions in a plasma. An ion extracting portion (4, 5) selectively extracts the generated positive ions and negative ions from the plasma, and accelerates the extracted ions in a predetermined direction. The positive ions and the negative ions are selectively applied to the workpiece (X). The plasma generator applies a high-frequency voltage to a process gas in a vacuum chamber for generating a plasma which is composed of positive ions and electrons from the process gas, and interrupts the high-frequency voltage for attaching the electrons to the residual process gas to generate negative ions. The application of the high-frequency voltage and the interruption of the high-frequency voltage are alternately repeated.

摘要翻译： 等离子体发生器在等离子体中产生正离子和负离子。 离子提取部分（4,5）选择性地从等离子体中提取产生的正离子和负离子，并且在预定方向上加速提取的离子。 正离子和负离子选择性地施加到工件（X）上。 等离子体发生器对真空室中的处理气体施加高频电压，用于产生由来自处理气体的正离子和电子组成的等离子体，并且中断用于将电子附着到残余处理气体的高频电压 以产生负离子。 交替地重复施加高频电压和高频电压的中断。

公开(公告)号：US06909086B2

公开(公告)日：2005-06-21

申请号：US10471742

申请日：2002-03-22

申请人： Seiji Samukawa ,  Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama

发明人： Seiji Samukawa ,  Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama

IPC分类号： H05H1/46 ,  C23C14/32 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H3/02 ,  H01L21/306 ,  H05H3/00

CPC分类号： H05H3/02

摘要： A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3) by applying a high-frequency electric field, an orifice electrode (4) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (4) which serves as an anode and the grid electrode (5) which serves as a cathode, while the high-frequency electric field applied by the plasma generator is being interrupted, to accelerate negative ions in the plasma generated by the plasma generator and pass the accelerated negative ions through the orifices (4a) in the orifice electrode (4).

摘要翻译： 中性粒子束处理装置包括用于保持工件（X）的工件保持器（20），用于通过施加高频电场在真空室（3）中产生等离子体的等离子体发生器，孔电极（4） 设置在工件保持器（20）和等离子体发生器之间，以及栅极（5），设置在真空室（3）中的孔电极（4）的上游。 孔口电极（4）具有限定在其中的孔（4a）。 中性粒子束处理装置还包括用于在用作阳极的孔电极（4）和用作阴极的栅电极（5）之间施加电压的电压施加单元，同时施加的高频电场 等离子体发生器被中断，以加速由等离子体发生器产生的等离子体中的负离子，并使加速的负离子通过孔口电极（4）中的孔（4a）。

公开(公告)号：US06054063A

公开(公告)日：2000-04-25

申请号：US100749

申请日：1998-06-22

申请人： Hiroto Ohtake ,  Seiji Samukawa

发明人： Hiroto Ohtake ,  Seiji Samukawa

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/00

CPC分类号： H01J37/32137 ,  H01J37/32192

摘要： The high-frequency electric field is subjected to pulse modulation for 10 to 100 .mu.sec; the rise time of pulse is controlled to be not shorter than 2 .mu.sec but not longer than 50 .mu.sec; and the descent time of pulse is controlled to be not shorter than 10 .mu.sec but not longer than .phi..mu.sec. Thereby, the electron temperature in plasma is controlled at 2 eV or lower and the fluctuation of the density of negative ion in plasma is controlled at 20% or smaller.

摘要翻译： 高频电场进行10〜100μs的脉冲调制; 脉冲上升时间控制在不短于2微秒但不超过50微秒; 并且脉冲的下降时间被控制为不短于10μsec但不长于phi sec。 因此，将等离子体中的电子温度控制在2eV以下，将等离子体中的负离子的密度的波动控制在20％以下。

公开(公告)号：US5565738A

公开(公告)日：1996-10-15

申请号：US440453

申请日：1995-05-12

申请人： Seiji Samukawa ,  Kibatsu Shinohara ,  Hirobumi Matsumoto ,  Tsutomu Tsukada ,  Yukito Nakagawa

发明人： Seiji Samukawa ,  Kibatsu Shinohara ,  Hirobumi Matsumoto ,  Tsutomu Tsukada ,  Yukito Nakagawa

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05B37/00

CPC分类号： H01J37/3211 ,  H01J37/32669

摘要： A plasma processing apparatus comprises a plasma chamber having a gas inlet opening and a gas outlet opening. A first high-frequency energy source supplies accelerating energy to a holder that supports a semiconductor specimen within the chamber to produce a high-frequency accelerating electric field. Gas is introduced to the chamber through the inlet opening and accelerated by the electric field toward the specimen. An antenna structure is connected to a second high-frequency energy source which supplies exciting energy at a frequency in the range between 100 MHz and 1 GHz which is higher than the frequency of the accelerating energy. The antenna structure has radially outwardly extending, circumferentially equally spaced apart elements of length equal to the quarter wavelength of the exciting energy so that there is a phase difference of 180 degrees between adjacent ones of the antenna elements. The accelerated gas is uniformly excited and converted to high-density plasma.

摘要翻译： 等离子体处理装置包括具有气体入口和气体出口的等离子体室。 第一高频能源将加速能量提供给支撑室内的半导体样品以产生高频加速电场。 通过入口将气体引入腔室，并通过电场向样品加速。 天线结构连接到第二高频能源，其在比加速能量的频率高的100MHz和1GHz之间的频率处提供激励能量。 天线结构具有长度等于激发能量的四分之一波长的径向向外延伸的周向等间隔的元件，使得相邻天线元件之间存在180度的相位差。 加速气体被均匀地激发并转化为高密度等离子体。

公开(公告)号：US09005461B2

公开(公告)日：2015-04-14

申请号：US12219123

申请日：2008-07-16

申请人： Tomohiko Tatsumi ,  Seiji Samukawa

发明人： Tomohiko Tatsumi ,  Seiji Samukawa

IPC分类号： G01N27/62 ,  B44C1/22 ,  H01J37/32 ,  H01L21/66

CPC分类号： H01J37/32935 ,  C23C16/50 ,  C23C16/52 ,  H01L22/14

摘要： A plasma monitoring method using a sensor, the sensor having a substrate; a first electrode, the first electrode being a conductive electrode and formed on the substrate while being isolated from the substrate; an insulating film formed on the first electrode; a contact hole formed in the insulating film and having a depth from a surface of the insulating film to the first electrode; and a second electrode, the second electrode being a conductive electrode, formed on the surface of the insulating film, and faced to plasma during a plasma process, the plasma monitoring method including measuring and monitoring potentials of the first electrode and the second electrode or a potential difference between the first electrode and the second electrode during the plasma process is disclosed. A plasma monitoring system carrying out the plasma monitoring method is also disclosed.

公开(公告)号：US07520956B2

公开(公告)日：2009-04-21

申请号：US10501351

申请日：2003-02-03

申请人： Seiji Samukawa ,  Tadashi Shinmura ,  Mitsuru Okigawa

发明人： Seiji Samukawa ,  Tadashi Shinmura ,  Mitsuru Okigawa

IPC分类号： C23F1/00 ,  H01L21/306 ,  H01L23/58 ,  G01R27/26

CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： An on-wafer monitoring system is placed at a position of a substrate to be treated in a plasma treatment device. The on-wafer monitoring system includes various sensors, a data I/O unit for optically inputting/outputting data to/from outside, and an internal power source unit for supplying power to them. The on-wafer data I/O unit is connected to a laser diode (LD) and a photo diode (PD) which are optical I/O units installed outside. The data I/O unit receives an instruction from outside and transmits monitored data to outside. Sensors arranged on the substrate are an ion energy analyzer, a VUV photon detector, and a radical ion species emission spectrophotometer.

摘要翻译： 将晶片上监视系统放置在等离子体处理装置中待处理基板的位置。 晶片上监视系统包括各种传感器，用于向外部光学地输入/输出数据的数据I / O单元和用于向外部供电的内部电源单元。 晶圆上的数据I / O单元连接到安装在外部的光学I / O单元的激光二极管（LD）和光电二极管（PD）。 数据I / O单元接收来自外部的指令，并将监视的数据发送到外部。 布置在基板上的传感器是离子能量分析仪，VUV光子检测器和自由基离子物质发射分光光度计。