公开(公告)号：US08828886B2

公开(公告)日：2014-09-09

申请号：US13440480

申请日：2012-04-05

申请人： Seiji Samukawa ,  Shigeo Yasuhara ,  Shingo Kadomura ,  Tsutomu Shimayama ,  Hisashi Yano ,  Kunitoshi Tajima ,  Noriaki Matsunaga ,  Masaki Yoshimaru

发明人： Seiji Samukawa ,  Shigeo Yasuhara ,  Shingo Kadomura ,  Tsutomu Shimayama ,  Hisashi Yano ,  Kunitoshi Tajima ,  Noriaki Matsunaga ,  Masaki Yoshimaru

IPC分类号： H01L21/312 ,  C09D183/04 ,  H01L21/02 ,  C23C16/48 ,  C23C16/40

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/486 ,  H01L21/02216 ,  H01L21/02277

摘要： Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH3) is 66% or more.

摘要翻译： 公开了由包含Si原子，O原子，C原子和H原子的聚合物形成的低介电常数绝缘膜，其包括其中多个具有SiO结构的碱性分子在直链中键合的直链分子，粘合剂 具有连接多个直链分子的SiO结构的分子。 指示线性型SiO结构的信号的面积比为49％以上，表示Si（CH3）的信号的信号量为66％以上。

公开(公告)号：US20120190212A1

公开(公告)日：2012-07-26

申请号：US13440480

申请日：2012-04-05

申请人： Seiji SAMUKAWA ,  Shigeo Yasuhara ,  Shingo Kadomura ,  Tsutomu Shimayama ,  Hisashi Yano ,  Kunitoshi Tajima ,  Noriaki Matsunaga ,  Masaki Yoshimaru

发明人： Seiji SAMUKAWA ,  Shigeo Yasuhara ,  Shingo Kadomura ,  Tsutomu Shimayama ,  Hisashi Yano ,  Kunitoshi Tajima ,  Noriaki Matsunaga ,  Masaki Yoshimaru

IPC分类号： H01L21/312 ,  C09D183/04

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/486 ,  H01L21/02216 ,  H01L21/02277

摘要： Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH3) is 66% or more.

摘要翻译： 公开了由包含Si原子，O原子，C原子和H原子的聚合物形成的低介电常数绝缘膜，其包括其中多个具有SiO结构的碱性分子在直链中键合的直链分子，粘合剂 具有连接多个直链分子的SiO结构的分子。 指示线性型SiO结构的信号的面积比为49％以上，表示Si（CH3）的信号的信号量为66％以上。

公开(公告)号：US20100112776A1

公开(公告)日：2010-05-06

申请号：US12685408

申请日：2010-01-11

申请人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

发明人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC分类号： H01L21/02 ,  B05D5/12

CPC分类号： H01L21/283 ,  C23C18/06 ,  C23C18/08 ,  H01L21/76879

摘要： A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.

摘要翻译： 导体形成装置包括反应容器，其中容纳有处理目标，其表面上形成有要在其中设置导体的凹部，并且在凹部中提供导体的过程在容器内部被执行 将与金属化合物一起溶解的超临界流体供给到容器内，从外部向容器内部供给流体的供给装置以及将未从内部排出的流体从内部排出到 在容器外部，其中通过由供应装置连续地将流体供给到容器中并且通过排出物将不被处理的流体连续排出到容器的外部来调节容器中的流体的量 设备。

公开(公告)号：US20080233705A1

公开(公告)日：2008-09-25

申请号：US11688684

申请日：2007-03-20

申请人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

发明人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC分类号： H01L21/20

CPC分类号： H01L21/76879 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/288 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.

摘要翻译： 一种用于选择性地形成电导体的方法，所述方法包括在包括超临界流体的气氛中设置处理对象和金属化合物，所述处理对象在其上形成有至少一个用于提供导电体的凹部，所述金属化合物包括金属 作为电导体的主要成分，将至少一部分金属化合物溶解在超临界流体中，选择性地将溶解在超临界流体中的金属化合物导入到与加工对象的表面接触的凹部中， 所述金属化合物引入所述凹部中以将所述金属从所述金属化合物中沉淀出来并将所述金属凝结在所述凹部中沉淀，由此在所述凹部中提供所述电导体。

公开(公告)号：US07892975B2

公开(公告)日：2011-02-22

申请号：US11688684

申请日：2007-03-20

申请人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

发明人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC分类号： H01L21/441

CPC分类号： H01L21/76879 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/288 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.

摘要翻译： 一种用于选择性地形成电导体的方法，所述方法包括在包括超临界流体的气氛中设置处理对象和金属化合物，所述处理对象在其上形成有至少一个用于提供导电体的凹部，所述金属化合物包括金属 作为电导体的主要成分，将至少一部分金属化合物溶解在超临界流体中，选择性地将溶解在超临界流体中的金属化合物导入到与加工对象的表面接触的凹部中， 所述金属化合物引入所述凹部中以将所述金属从所述金属化合物中沉淀出来并将所述金属凝结在所述凹部中沉淀，由此在所述凹部中提供所述电导体。

公开(公告)号：US20080206949A1

公开(公告)日：2008-08-28

申请号：US11845615

申请日：2007-08-27

申请人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

发明人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC分类号： H01L21/44 ,  B05C11/00

CPC分类号： H01L21/283 ,  C23C18/06 ,  C23C18/08 ,  H01L21/76879

摘要： A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.

摘要翻译： 导体形成装置包括反应容器，其中容纳有处理目标，其表面上形成有要在其中设置导体的凹部，并且在凹部中提供导体的过程在容器内部被执行 将与金属化合物一起溶解的超临界流体供给到容器内，从外部向容器内部供给流体的供给装置以及将未从内部排出的流体从内部排出到 在容器外部，其中通过由供应装置连续地将流体供给到容器中并且通过排出物将不被处理的流体连续排出到容器的外部来调节容器中的流体的量 设备。

公开(公告)号：US20110189849A1

公开(公告)日：2011-08-04

申请号：US13087026

申请日：2011-04-14

申请人： Junichi KOIKE ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi KOIKE ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L21/768

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜，以覆盖开口的内表面，形成主膜以填充开口 在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素 在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分， 的层间绝缘膜。

公开(公告)号：US07932508B2

公开(公告)日：2011-04-26

申请号：US12838985

申请日：2010-07-19

申请人： Sumio Hosaka ,  Hayato Sone ,  Masaki Yoshimaru ,  Takashi Ono ,  Mayumi Nakasato

发明人： Sumio Hosaka ,  Hayato Sone ,  Masaki Yoshimaru ,  Takashi Ono ,  Mayumi Nakasato

IPC分类号： H01L29/02

CPC分类号： G11C11/5678 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/148

摘要： A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer 26, a second electrode layer 28, and a memory layer 30 provided between the first and second electrode layers 26 and 28 and containing a phase-change material layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature, wherein the memory layer 30 includes a plurality of mutually isolated sub-memory layers 32, 34, 36, and 38 between the first and second electrode layers 26 and 28.

摘要翻译： 可以稳定地记录多值信息并且可以高可靠性再现信息的多值记录相变存储器件包括：第一电极层26，第二电极层28和存储层30， 和第二电极层26和28，并且包含由在室温下在非晶相或结晶相中稳定的相变材料形成的相变材料层，其中存储层30包括多个相互隔离的子 内存层32,34,36和38在第一和第二电极层26和28之间。

公开(公告)号：US07838439B2

公开(公告)日：2010-11-23

申请号：US12146835

申请日：2008-06-26

申请人： Masaharu Oshima ,  Haruhiko Takahashi ,  Koji Usuda ,  Ziyuan Liu ,  Liu Guo-lin ,  Kazuto Ikeda ,  Masaki Yoshimaru

发明人： Masaharu Oshima ,  Haruhiko Takahashi ,  Koji Usuda ,  Ziyuan Liu ,  Liu Guo-lin ,  Kazuto Ikeda ,  Masaki Yoshimaru

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/336

CPC分类号： H01L21/28176 ,  H01L21/28035 ,  H01L29/513 ,  H01L29/517

摘要： A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

摘要翻译： 层叠膜具有在硅层上形成的含有铪的绝缘膜和形成在绝缘膜上的多晶硅层。 层叠的膜在含氧和氮气的气氛中加热，其总压力近似等于氮的分压。

公开(公告)号：US07782630B2

公开(公告)日：2010-08-24

申请号：US12222232

申请日：2008-08-05

申请人： Naohiko Kajio ,  Masaki Yoshimaru

发明人： Naohiko Kajio ,  Masaki Yoshimaru

IPC分类号： H05K7/14

CPC分类号： H05K7/1492 ,  H05K1/0263 ,  H05K1/14 ,  H05K1/141 ,  H05K1/148 ,  H05K2201/044 ,  H05K2201/10272 ,  H05K2201/10287

摘要： A second printed wiring board is opposed to a surface of the first printed wiring board. A support member supports the first and second printed wiring boards. A first connector is mounted on the first printed wiring board. A second connector is mounted on the second printed wiring board. A wiring connects the first printed wiring board to the second printed wiring board. The first and second connectors are separately mounted on the first and second printed wiring boards, respectively. The sizes of the first and second printed wiring boards can be reduced as compared with the case where connectors are arranged in a row on a single printed wiring board, for example. This results in a reduction in the size of the printed circuit board unit. A large number of the printed circuit board units can be coupled to the back panel.

摘要翻译： 第二印刷线路板与第一印刷线路板的表面相对。 支撑构件支撑第一和第二印刷线路板。 第一连接器安装在第一印刷线路板上。 第二连接器安装在第二印刷线路板上。 布线将第一印刷布线板连接到第二印刷布线板。 第一和第二连接器分别安装在第一和第二印刷电路板上。 与在单个印刷电路板上连接成排配置的情况相比，可以减小第一和第二印刷电路板的尺寸。 这导致印刷电路板单元的尺寸的减小。 大量印刷电路板单元可以耦合到后面板。