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72 条记录 (耗时 0.019 秒)

    Visible double heterostructure-semiconductor laser
    1.
    发明授权
    Visible double heterostructure-semiconductor laser 失效
    可见双异质结半导体激光器

    公开(公告)号：US4712219A

    公开(公告)日：1987-12-08

    申请号：US716222

    申请日：1985-03-26

    申请人： Seiki Yano ,  Saburo Yamamoto ,  Haruhisa Takiguchi ,  Shinji Kaneiwa

    发明人： Seiki Yano ,  Saburo Yamamoto ,  Haruhisa Takiguchi ,  Shinji Kaneiwa

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/24 ,  H01S5/323 ,  H01S3/19 ,  H01L33/00

    CPC分类号： H01S5/32325 ,  H01S5/24 ,  H01S5/0206

    摘要： A visible double heterostructure-semiconductor laser comprising an InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer, a first cladding layer on the InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer; an active layer on the first cladding layer and a second cladding layer on the active layer, wherein a mixed crystal of, respectively InGaAs, InAlP, InAlAs, InAlSb or InGaSb is used, as a substrate crystal for growing of said InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer thereon, and the composition ratio of the substrate crystal and of each of the layers is selected so as to result in the approximate coincidence between the lattice constant of the substrate crystal and the lattice constant of each of these layers, an energy difference of 0.2 eV or more between the direct transition and the indirect transition within said active layer, and an energy difference of 0.2 eV or more between the active layer and either of the first or the second cladding layers.

    摘要翻译： 包括InGaAs，InAlP，InAlAs，InAlSb或InGaSb层的可见双异质结构半导体激光器，InGaAs，InAlP，InAlAs，InAlSb或InGaSb层中的第一包层; 在第一包层上的有源层和有源层上的第二包层，其中使用分别为InGaAs，InAlP，InAlAs，InAlSb或InGaSb的混晶，作为用于生长所述InGaAs，InAlP，InAlAs的衬底晶体 ，InAlSb或InGaSb层，并且选择基板晶体和各层的组成比，从而导致基板晶体的晶格常数和这些层的晶格常数之间的近似一致， 所述有源层内的直接跃迁和间接跃迁之间的能量差为0.2eV以上，并且在有源层与第一或第二覆层中的任一层之间的能量差为0.2eV以上。

    (VSIS) semiconductor laser with reduced compressive stress
    4.
    发明授权
    (VSIS) semiconductor laser with reduced compressive stress 失效
    （VSIS）半导体激光器，具有降低的压缩应力

    公开(公告)号：US4592062A

    公开(公告)日：1986-05-27

    申请号：US498041

    申请日：1983-05-25

    申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

    发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

    IPC分类号： H01L21/208 ,  H01S5/00 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/24

    摘要： A V-channeled substrate inner stripe (VSIS) laser is manufactured on a GaAs substrate. The VSIS laser includes p-Ga.sub.0.7 Al.sub.0.3 As active layer, and an n-Ga.sub.0.85 Al.sub.0.15 As cap layer. The GaAs substrate is removed from the final device. The n-Ga.sub.0.85 Al.sub.0.15 As cap layer functions to support the final device, and to minimize a stress applied to the p-Ga.sub.0.7 Al.sub.0.3 As active layer.

    摘要翻译： 在GaAs衬底上制造V沟道衬底内条（VSIS）激光器。 VSIS激光器包括p-Ga0.7Al0.3As有源层和n-Ga0.85Al0.15As覆盖层。 从最终的器件去除GaAs衬底。 n-Ga0.85Al0.15As覆盖层用于支持最终器件，并且最小化施加到p-Ga0.7Al0.3As有源层的应力。

    Semiconductor laser array
    5.
    发明授权
    Semiconductor laser array 失效
    半导体激光阵列

    公开(公告)号：US4768201A

    公开(公告)日：1988-08-30

    申请号：US760538

    申请日：1985-07-30

    申请人： Mototaka Taneya ,  Sadayoshi Matsui ,  Seiki Yano ,  Saburo Yamamoto

    发明人： Mototaka Taneya ,  Sadayoshi Matsui ,  Seiki Yano ,  Saburo Yamamoto

    IPC分类号： H01S5/40 ,  H01S3/19 ,  H01S3/098

    CPC分类号： H01S5/4068

    摘要： A semiconductor laser array which includes a plurality of active wave guide in a substantially parallel manner disposed on first and second laser opposing laser facets so as to be optically coupled and so that adjacent wave guides converse into one or more active wave guides on an opposing laser facet. The laser array exhibits stable operations and a high output power in a single narrow beam. The active wave guides have identical vertical modes and a phase difference of zero degrees.

    摘要翻译： 一种半导体激光器阵列，其包括大致平行的多个有源波导，该多个有源波导布置在第一和第二激光相对的激光刻面上，以便光学耦合，并使得相邻的波导相对于相对激光器上的一个或多个有源波导 方面 激光器阵列在单个窄光束中表现出稳定的操作和高输出功率。 有源波导具有相同的垂直模式和零度的相位差。

    Window VSIS semiconductor laser
    6.
    发明授权
    Window VSIS semiconductor laser 失效
    窗口VSIS半导体激光器

    公开(公告)号：US4686679A

    公开(公告)日：1987-08-11

    申请号：US713832

    申请日：1985-03-20

    申请人： Seiki Yano ,  Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    发明人： Seiki Yano ,  Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/16 ,  H01S5/24 ,  H01S5/2234

    摘要： A window VSIS semiconductor laser includes a stimulated region and window regions formed on both ends of the stimulated region. A V-shaped groove is formed in a substrate, and an active layer is formed on the substrate. In one preferred form, the V-shaped groove has a wider width in the stimulated region as compared with the V-shaped groove formed in the window regions. The active layer is a crescent active layer in the stimulated region. One edge of the V-shaped groove in the stimulated region is continuously aligned on a line to the corresponding edge of the V-shaped groove formed in the window regions so as to enhance the optical coupling. In another preferred form, indents are formed in the substrate in the window regions in a manner to sandwich the V-shaped groove formed in the window regions. The V-shaped groove has the same width in the stimulated region and in the window regions. The active layer is plane shaped in the stimulated region, and a thickness of the active layer in the stimulated region is thicker than the active layer formed in the window regions.

    Window structure semiconductor laser
    10.
    发明授权
    Window structure semiconductor laser 失效
    窗结构半导体激光器

    公开(公告)号：US4546481A

    公开(公告)日：1985-10-08

    申请号：US476844

    申请日：1983-03-18

    申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

    发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/24 ,  H01S5/16 ,  H01S5/2234

    摘要： A window V-channeled substrate inner stripe semiconductor laser which includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted from the stimulated region to the mirror. The window regions ensure a stable operation of the laser oscillation and a high optical power for catastrophic optical damage.

    摘要翻译： 窗口V沟道衬底内条半导体激光器，其包括形成在受激区域的两端的窗口区域。 受激区域包括新月活性层，并且每个窗口区域包括用于将从被刺激区域发射的激光束传送到反射镜的平面有源层。 窗口区域确保激光振荡的稳定操作和用于灾难性光学损伤的高光功率。