公开(公告)号：US11489077B2

公开(公告)日：2022-11-01

申请号：US17000580

申请日：2020-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US11309430B2

公开(公告)日：2022-04-19

申请号：US16905999

申请日：2020-06-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L29/24

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US09281407B2

公开(公告)日：2016-03-08

申请号：US14700433

申请日：2015-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Masashi Oota ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L29/78 ,  H01L21/336 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

公开(公告)号：US20140370706A1

公开(公告)日：2014-12-18

申请号：US14467142

申请日：2014-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

Abstract translation: 通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。 此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以 防止 因此，可以制造高度可靠的半导体器件。 具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

公开(公告)号：US08643011B2

公开(公告)日：2014-02-04

申请号：US13677504

申请日：2012-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junichiro Sakata ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga

IPC: H01L29/15

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

Abstract translation: 本发明的目的是提供一种适用于半导体器件的氧化物半导体。 或者，另一目的是提供一种使用氧化物半导体的半导体器件。 提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。 在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

公开(公告)号：US20130075723A1

公开(公告)日：2013-03-28

申请号：US13671638

申请日：2012-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78696

Abstract: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

Abstract translation: 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。

公开(公告)号：US11367793B2

公开(公告)日：2022-06-21

申请号：US17008745

申请日：2020-09-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/768 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L21/02 ,  H01L21/324 ,  H01L29/24 ,  H01L29/423

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US10236391B2

公开(公告)日：2019-03-19

申请号：US15994303

申请日：2018-05-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L29/24

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US10096623B2

公开(公告)日：2018-10-09

申请号：US15856685

申请日：2017-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu Kondo ,  Hideyuki Kishida

IPC: H01L29/00 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24 ,  H01L29/45 ,  H01L21/477 ,  H01L27/32

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

公开(公告)号：US10043915B2

公开(公告)日：2018-08-07

申请号：US15432977

申请日：2017-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.