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公开(公告)号：US20220366663A1
公开(公告)日：2022-11-17
申请号：US17873458
申请日：2022-07-26
发明人： Takahiro Fukutome , Hiromichi Godo
IPC分类号： G06V10/147 , G06K9/62 , G06N3/04 , G06N3/08 , H01L27/146 , H04N5/3745 , H04N5/378
摘要： Environmental information is managed by a neural network.
An image detection module includes a first neural network, a first communication module, a first position sensor, a first processor, and a passive element. The first neural network includes an imaging device. The imaging device has a function of obtaining an image, and the first position sensor has a function of detecting positional information on where the image is obtained. When the first neural network determines whether the image has learned features, the first processor can transmit the positional information on where the image is obtained. The first processor receives a detection result through the first communication module, and the first processor can operate the passive element in accordance with the detection result.-
公开(公告)号：US11342599B2
公开(公告)日：2022-05-24
申请号：US17019700
申请日：2020-09-14
发明人： Junpei Momo , Kazutaka Kuriki , Hiromichi Godo , Shunpei Yamazaki
IPC分类号： H01M10/46 , H02J50/20 , H01M10/0562 , H01M10/613 , H01L21/822 , H01L27/06 , H01M10/052 , H01M10/42 , H01M10/623 , A61N1/378 , G06F1/16 , H01L27/12 , H01L29/786 , H01M10/0525 , H01M10/0585 , H02J7/02
摘要： A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.
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公开(公告)号：US09685562B2
公开(公告)日：2017-06-20
申请号：US15132297
申请日：2016-04-19
IPC分类号： H01L29/786 , H01L29/24 , H01L29/423
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/42356 , H01L29/78648
摘要： An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.
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4.发明授权Field-effect transistor including oxide semiconductor, and memory and semiconductor circuit including the same 有权包括氧化物半导体的场效应晶体管，以及包括其的存储器和半导体电路公开(公告)号：US09548395B2
公开(公告)日：2017-01-17
申请号：US14848515
申请日：2015-09-09
IPC分类号： H01L29/12 , H01L29/786 , H01L27/06 , H01L29/78 , H01L27/108 , H01L27/115 , H01L27/12 , H01L49/02 , H01L29/417
CPC分类号： H01L29/7869 , H01L27/0688 , H01L27/108 , H01L27/10805 , H01L27/10826 , H01L27/10852 , H01L27/10879 , H01L27/10894 , H01L27/10897 , H01L27/1156 , H01L27/1203 , H01L27/1225 , H01L28/90 , H01L29/41733 , H01L29/785 , H01L29/78609
摘要： Provided is a field-effect transistor (FET) having small off-state current, which is used in a miniaturized semiconductor integrated circuit. The field-effect transistor includes a thin oxide semiconductor which is formed substantially perpendicular to an insulating surface, a gate insulating film formed to cover the oxide semiconductor, and a gate electrode which is formed to cover the gate insulating film. The gate electrode partly overlaps a source electrode and a drain electrode. The source electrode and the drain electrode are in contact with at least a top surface of the oxide semiconductor. In this structure, three surfaces of the thin oxide semiconductor are covered with the gate electrode, so that electrons injected from the source electrode or the drain electrode can be effectively removed, and most of the space between the source electrode and the drain electrode can be a depletion region; thus, off-state current can be reduced.
摘要翻译： 提供了一种具有小截止电流的场效应晶体管（FET），其用于小型化的半导体集成电路中。 场效应晶体管包括形成为基本上垂直于绝缘表面的薄氧化物半导体，形成为覆盖氧化物半导体的栅极绝缘膜，以及形成为覆盖栅极绝缘膜的栅电极。 栅电极部分地与源电极和漏电极重叠。 源电极和漏极与氧化物半导体的至少顶表面接触。 在这种结构中，薄氧化物半导体的三个表面被栅电极覆盖，使得可以有效地去除从源电极或漏电极注入的电子，源电极和漏电极之间的大部分空间可以是 一个耗尽区域 因此，可以减小截止电流。
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公开(公告)号：US09324877B2
公开(公告)日：2016-04-26
申请号：US14483685
申请日：2014-09-11
IPC分类号： H01L29/786 , H01L29/24
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/42356 , H01L29/78648
摘要： An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.
摘要翻译： 本发明的目的是提供具有诸如高耐受电压，低反向饱和电流和高导通电流等电特性的半导体器件。 特别地，目的是提供一种包括非线性元件的功率二极管和整流器。 本发明的一个实施例是一种半导体器件，包括第一电极，覆盖第一电极的栅极绝缘层，与栅极绝缘层接触并与第一电极重叠的氧化物半导体层，覆盖端部的一对第二电极 所述氧化物半导体层的绝缘层，覆盖所述一对第二电极和所述氧化物半导体层的绝缘层，以及与所述绝缘层和所述一对第二电极接触的第三电极。 一对第二电极与氧化物半导体层的端面接触。
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公开(公告)号：US09184299B2
公开(公告)日：2015-11-10
申请号：US14207750
申请日：2014-03-13
发明人： Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae
IPC分类号： H01L29/12 , H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that the carrier concentration is less than 1×1012/cm3 is used for an oxide semiconductor layer of an insulated gate transistor, in which a channel region is formed. The length of the channel formed in the oxide semiconductor layer is set to 0.2 μm to 3.0 μm inclusive and the thicknesses of the oxide semiconductor layer and the gate insulating layer are set to 15 nm to 30 nm inclusive and 20 nm to 50 nm inclusive, respectively, or 15 nm to 100 nm inclusive and 10 nm to 20 nm inclusive, respectively. Consequently, a short-channel effect can be suppressed, and the amount of change in threshold voltage can be less than 0.5 V in the range of the above channel lengths.
摘要翻译： 对于绝缘栅极晶体管的氧化物半导体层，使用已进行脱水或脱氢工序的本征或本质上本征的半导体，以及添加氧以使载流子浓度小于1×10 12 / cm 3的步骤， 其中形成沟道区。 将形成在氧化物半导体层中的沟道的长度设定为0.2μm〜3.0μm，将氧化物半导体层和栅极绝缘层的厚度设定为15nm〜30nm，包括20nm〜50nm， 或分别为15nm〜100nm，10nm〜20nm。 因此，可以抑制短沟道效应，并且在上述通道长度的范围内阈值电压的变化量可以小于0.5V。
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公开(公告)号：US08901806B2
公开(公告)日：2014-12-02
申请号：US13775455
申请日：2013-02-25
CPC分类号： H01L51/5246 , H01L23/564 , H01L27/124 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L33/44 , H01L51/5237 , H01L2227/323 , H01L2251/5323 , H05B33/04 , H05B33/14 , Y10T428/24777
摘要： A novel display device with higher reliability having a structure of blocking moisture and oxygen, which deteriorate the characteristics of the display device, from penetrating through a sealing region and a method of manufacturing thereof is provided. According to the present invention, a display device and a method of manufacturing the same comprising: a display portion formed by aligning a light-emitting element using an organic light-emitting material between a pair of substrate, wherein the display portion is formed on an insulating layer formed on any one of the substrates, the pair of substrates is bonded to each other with a sealing material formed over the insulating layer while surrounding a periphery of the display portion, at least one layer of the insulating layer is made of an organic resin material, the periphery has a first region and a second region, the insulating layer in the first region has an opening covered with a protective film, the sealing material is formed in contact with the opening and the protective film, an outer edge portion of the insulating layer in the second region is covered with the protective film or the sealing material.
摘要翻译： 提供了一种具有较高可靠性的具有阻挡水分和氧气结构，从而使显示装置的特性劣化的新型显示装置不会渗入密封区域及其制造方法。 根据本发明，一种显示装置及其制造方法，包括：显示部分，其通过使用有机发光材料在一对基板之间对准发光元件而形成，其中所述显示部分形成在 绝缘层形成在任何一个基板上，一对基板通过形成在绝缘层上的密封材料彼此接合，同时围绕显示部分的周围，至少一层绝缘层由有机物 树脂材料的周边具有第一区域和第二区域，第一区域中的绝缘层具有覆盖有保护膜的开口，密封材料形成为与开口和保护膜接触，外部边缘部分 第二区域中的绝缘层被保护膜或密封材料覆盖。
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8.发明申请Field-Effect Transistor, and Memory and Semiconductor Circuit Including the Same 有权场效应晶体管，以及包括其的存储器和半导体电路公开(公告)号：US20140252353A1
公开(公告)日：2014-09-11
申请号：US14287318
申请日：2014-05-27
IPC分类号： H01L29/786 , H01L27/108 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/0688 , H01L27/108 , H01L27/10805 , H01L27/10826 , H01L27/10852 , H01L27/10879 , H01L27/10894 , H01L27/10897 , H01L27/1156 , H01L27/1203 , H01L27/1225 , H01L28/90 , H01L29/41733 , H01L29/785 , H01L29/78609
摘要： Provided is a field-effect transistor (FET) having small off-state current, which is used in a miniaturized semiconductor integrated circuit. The field-effect transistor includes a thin oxide semiconductor which is formed substantially perpendicular to an insulating surface and has a thickness of greater than or equal to 1 nm and less than or equal to 30 nm, a gate insulating film formed to cover the oxide semiconductor, and a strip-like gate which is formed to cover the gate insulating film and has a width of greater than or equal to 10 nm and less than or equal to 100 nm. In this structure, three surfaces of the thin oxide semiconductor are covered with the gate, so that electrons injected from a source or a drain can be effectively removed, and most of the space between the source and the drain can be a depletion region; thus, off-state current can be reduced.
摘要翻译： 提供了一种具有小截止电流的场效应晶体管（FET），其用于小型化的半导体集成电路中。 场效应晶体管包括形成为基本上垂直于绝缘表面并且具有大于或等于1nm且小于或等于30nm的厚度的薄氧化物半导体，形成为覆盖氧化物半导体的栅极绝缘膜 以及形成为覆盖栅极绝缘膜并且具有大于或等于10nm且小于或等于100nm的宽度的条状栅极。 在这种结构中，薄氧化物半导体的三个表面被栅极覆盖，使得可以有效地去除从源极或漏极注入的电子，并且源极和漏极之间的大部分空间可以是耗尽区; 因此，可以减小截止电流。
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公开(公告)号：US20220270548A1
公开(公告)日：2022-08-25
申请号：US17671905
申请日：2022-02-15
发明人： Yoshiyuki Kurokawa , Hiromichi Godo , Kouhei Toyotaka , Kazuki Tsuda , Satoru Ohshita , Hidefumi Rikimaru
IPC分类号： G09G3/3225 , G02B27/01 , H01L27/32 , G06F3/01 , G09G3/00
摘要： To provide a novel electronic device. The electronic device includes a housing and a display device. The display device includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are provided in different layers. The first layer includes a driver circuit and an arithmetic circuit. The second layer includes pixel circuits and a cell array. The third layer includes light-receiving devices and light-emitting devices. The pixel circuits each have a function of controlling light emission of the light-emitting device. The driver circuit has a function of controlling the pixel circuits. The arithmetic circuit has a function of performing arithmetic processing on the basis of first data corresponding to currents output from the light-receiving devices and second data corresponding to a potential held in the cell array.
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公开(公告)号：US10290720B2
公开(公告)日：2019-05-14
申请号：US15642400
申请日：2017-07-06
摘要： The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.
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