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    Semiconductor device and dynamic logic circuit
    1.
    发明授权
    Semiconductor device and dynamic logic circuit 有权

    公开(公告)号：US12266398B2

    公开(公告)日：2025-04-01

    申请号：US17337552

    申请日：2021-06-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tomoaki Atsumi ,  Kiyoshi Kato ,  Shuhei Maeda

    IPC: G11C11/40 ,  G11C11/4094 ,  H01L29/786 ,  H10B12/00

    Abstract: A semiconductor device whose operating speed is increased is provided. The semiconductor device includes a write word line, a read word line, a write bit line, a read bit line, a first wiring, and a memory cell. The memory cell includes three transistors of a single conductivity type and a capacitor. Gates of the three transistors are electrically connected to the write word line, a first terminal of the capacitor, and the read word line, respectively. A second terminal of the capacitor is electrically connected to the read bit line. A source and a drain of one transistor are electrically connected to the write bit line and the gate of another transistor, respectively. Two of the three transistors are electrically connected in series between the read bit line and the first wiring. A channel formation region of each of the three transistors includes, for example, a metal oxide layer.

    Memory device and semiconductor device
    4.
    发明授权
    Memory device and semiconductor device 有权

    公开(公告)号：US12193244B2

    公开(公告)日：2025-01-07

    申请号：US17891248

    申请日：2022-08-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yutaka Shionoiri ,  Hiroyuki Miyake ,  Kiyoshi Kato

    IPC: H01L29/786 ,  H01L27/12 ,  H01L27/13 ,  H10B41/70 ,  H10B69/00 ,  H10B99/00 ,  G11C16/04

    Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.

    Semiconductor Device and Method For Driving Semiconductor Device
    5.
    发明申请
    Semiconductor Device and Method For Driving Semiconductor Device 有权

    公开(公告)号：US20240389295A1

    公开(公告)日：2024-11-21

    申请号：US18785940

    申请日：2024-07-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Takayuki Ikeda ,  Kiyoshi Kato ,  Yuta Endo ,  Junpei Sugao

    IPC: H10B12/00 ,  G11C5/02 ,  G11C11/403 ,  G11C11/409 ,  H01L29/24

    Abstract: A semiconductor device with a large storage capacity per unit area is provided.
    A semiconductor device includes a memory cell. The memory cell includes a first conductor; a first insulator over the first conductor; a first oxide over the first insulator and including a first region, a second region, and a third region positioned between the first region and the second region; a second insulator over the first oxide; a second conductor over the second insulator; a third insulator positioned in contact with a side surface of the first region; and a second oxide positioned on the side surface of the first region, with the third insulator therebetween. The first region includes a region overlapping the first conductor. The third region includes a region overlapped by the second conductor. The first region and the second region have a lower resistance than the third region.

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11195561B2

    公开(公告)日：2021-12-07

    申请号：US16764955

    申请日：2018-11-30

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Tomoaki Atsumi ,  Kiyoshi Kato ,  Tatsuya Onuki ,  Shunpei Yamazaki

    IPC: G11C7/04 ,  G11C5/04 ,  G11C11/4074 ,  H01L27/108 ,  H01L27/12 ,  H01L29/221 ,  G11C5/14

    Abstract: A semiconductor device with a high on-state current and high operating speed is provided. The semiconductor device includes a transistor and a first circuit. The transistor includes a first gate and a second gate, and the first gate and the second gate include a region where they overlap each other with a semiconductor layer therebetween. The first circuit includes a temperature sensor and a voltage control circuit. The temperature sensor has a function of obtaining temperature information and outputting the temperature information to the voltage control circuit. The voltage control circuit has a function of converting the temperature information into a control voltage. The first circuit applies the control voltage to the second gate.

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