公开(公告)号：US20230100058A1

公开(公告)日：2023-03-30

申请号：US17955955

申请日：2022-09-29

申请人： Semiconductor Manufacturing International (Beijing) Corporation ,  Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Hailong YU ,  Bo SU ,  Hansu OH

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L21/02 ,  H01L21/311 ,  H01L21/285

摘要： Semiconductor structure and forming method thereof are provided. The forming method includes: providing a substrate; forming a plurality of initial composite layers on a portion of the substrate; forming a plurality of source and drain layers on surfaces of the plurality of channel layers exposed by a first opening and grooves by using a selective epitaxial growth process, the plurality of source and drain layers being parallel to a first direction and distributed along a second direction, the second direction being parallel to a normal direction of the substrate, and gaps being between adjacent source and drain layers; forming contact layers on surfaces of the plurality of source and drain layers and in the gaps; and forming a conductive structure on a surface of a contact layer on a source and drain layer of the plurality of source and drain layers.

公开(公告)号：US20220199808A1

公开(公告)日：2022-06-23

申请号：US17226462

申请日：2021-04-09

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Hansu OH ,  Pengchong LI ,  Xuejie SHI ,  Yiyu CHEN ,  Bo SU

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/8234

摘要： A semiconductor structure and a method for forming the same are provided. In one form, a forming method includes: providing a base, a gate structure, a source-drain doping region, and an interlayer dielectric layer; removing the gate structure located in an isolation region to form an isolation opening and expose the top and side walls of a fin located in the isolation region; performing first ion-doping on the fin under the isolation opening to form an isolation doped region, a doping type of the isolation doped region being different from a doping type of the source-drain doping region; and filling the isolation opening with an isolation structure after the doping, the isolation structure straddling the fin of the isolation region. In embodiments and implementations of the present disclosure, the isolation doped region is formed, a doping concentration of inversion ions in the fin of the isolation region can thus be increased, and a barrier of a P-N junction formed by the source-drain doping region and the fin of the isolation region can be increased accordingly, to prevent the device from generating a conduction current in the fin of the isolation region during operation, thereby implementing isolation between the fin of the isolation region and the fin of other regions. Moreover, there is no need to perform a fin cut process. Hence the fin is made into a continuous structure, which helps prevent stress relief in the fin.

公开(公告)号：US20220199460A1

公开(公告)日：2022-06-23

申请号：US17520967

申请日：2021-11-08

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Pengchong LI ,  Xuejie SHI ,  Hansu OH ,  Bo SU

IPC分类号： H01L21/762 ,  H01L21/265 ,  H01L21/8234 ,  H01L29/66

摘要： A method for forming a semiconductor structure is provided. In one form, a method includes: providing a base, a dummy gate structure, a source-drain doped region, and an interlayer dielectric layer; removing the dummy gate structure located at an isolation region to form an isolation opening; performing first ion doping on a fin below the isolation opening, to form an isolation doped region, where a doping type of the isolation doped region is different from a doping type of the source-drain doped region; filling an isolation structure in the isolation opening; removing the remaining dummy gate structure, to form a gate opening; and forming a gate structure in the gate opening. In embodiments and implementations of the present disclosure, the isolation doped region with a doping type different from that of the source-drain doped region is formed, so that a doping concentration of opposite-type ions in the fin of the isolation region can be improved, thereby accordingly improving a potential energy barrier of a P-N junction formed by the source-drain doped region and the fin of the isolation region, to prevent a conduction current from being generated in the fin of the isolation region when a device is working, and implementing isolation between the fin in the isolation region and the fin in other regions. Moreover, there is no need to perform a fin cut process, so that the fin is a continuous structure, to prevent stress release in the fin.