公开(公告)号：US11069572B2

公开(公告)日：2021-07-20

申请号：US16806062

申请日：2020-03-02

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Ze Jun He ,  Jun Ling Pang

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L21/311

摘要： Semiconductor device and formation method are provided. The method includes providing a substrate, a first fin and a second fin on the substrate, an isolation structure covering a portion of sidewalls of the first and second fins, a gate structure across the first fin or the second fin, a first doped source/drain region in the first fin, a second doped source/drain region in the second fin, and an interlayer dielectric layer on the isolation structure, the first and second fins, and the gate structure. A first through hole is formed in the interlayer dielectric layer, exposing the first doped source/drain region or the second doped source/drain region. A second through hole is formed in the interlayer dielectric layer on the isolation structure to connect to the first through hole. A first plug is formed in the first through hole and a second plug is formed in the second through hole.