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公开(公告)号：US08854886B2
公开(公告)日：2014-10-07
申请号：US13537608
申请日：2012-06-29
申请人： Seok-Jin Joo
发明人： Seok-Jin Joo
CPC分类号： G11C16/3418 , G11C16/10 , G11C16/3459
摘要： A method of programming a nonvolatile memory includes: applying a common program pulse to program cells within each page of a memory region including two or more pages; applying one or more different program pulses to the program cells within each page of the memory region, according to target threshold voltages of the program cells; and programming each page of the memory region such that the program cells have their own target threshold voltages.
摘要翻译： 一种对非易失性存储器进行编程的方法包括：将公共编程脉冲施加到包括两个或更多页的存储器区域的每一页内的编程单元; 根据所述程序单元的目标阈值电压将一个或多个不同的编程脉冲施加到所述存储器区域的每一页内的所述程序单元; 并且对存储器区域的每一页进行编程，使得编程单元具有其自己的目标阈值电压。
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2.发明授权Control circuit of flash memory device and method of operating the flash memory device 有权闪存设备的控制电路和操作闪存设备的方法公开(公告)号：US07885137B2
公开(公告)日：2011-02-08
申请号：US11967135
申请日：2007-12-29
申请人： Seok-Jin Joo
发明人： Seok-Jin Joo
IPC分类号： G11C7/00
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7207 , G11C11/5628 , G11C16/10 , G11C2211/5647
摘要： Provided is a method of operating a flash memory device having a first area and a second area, in which a programmed state and an erased state of the first area are opposite to that of the second area. The method includes receiving a program command, inverting the program data when the received program command is a command for programming the second area, and programming the inverted program data into the second area.
摘要翻译： 提供了一种操作具有第一区域和第二区域的闪速存储器件的方法，其中第一区域的编程状态和擦除状态与第二区域的擦除状态相反。 该方法包括接收编程命令，当接收到的程序命令是用于编程第二区域的命令时，将程序数据反转，并将反转的程序数据编程到第二区域。
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3.发明授权Non-volatile memory device and method of preventing hot electron program disturb phenomenon 有权非易失性存储器件及防止热电子程序干扰现象的方法公开(公告)号：US07596019B2
公开(公告)日：2009-09-29
申请号：US11934080
申请日：2007-11-02
申请人： Seok-Jin Joo
发明人： Seok-Jin Joo
CPC分类号： G11C16/12 , G11C16/3418
摘要： A method for preventing generation of program disturbance incurred by hot electrons in a NAND flash memory device. A channel boosting disturb-prevention voltage lower than a program-prohibit voltage applied to other word lines is applied to edge word lines coupled to memory cells that are nearest to select transistors. As a result, an electric field between the memory cells coupled to the edge word lines and the select transistors is weakened, and the energy of the hot electrons is reduced.
摘要翻译： 一种用于防止在NAND闪速存储器件中由热电子产生的程序干扰的方法。 施加到低于施加到其它字线的编程禁止电压的通道增强干扰防止电压被施加到耦合到最接近选择晶体管的存储器单元的边缘字线。 结果，耦合到边缘字线和选择晶体管的存储单元之间的电场被削弱，并且热电子的能量减小。
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4.发明授权Non-volatile memory device and method of preventing hot electron program disturb phenomenon 有权非易失性存储器件及防止热电子程序干扰现象的方法公开(公告)号：US07428166B2
公开(公告)日：2008-09-23
申请号：US11934081
申请日：2007-11-02
申请人： Seok-Jin Joo
发明人： Seok-Jin Joo
CPC分类号： G11C16/12 , G11C16/3418
摘要： A method for preventing generation of program disturbance incurred by hot electrons in a NAND flash memory device. A channel boosting disturb-prevention voltage lower than a program-prohibit voltage applied to other word lines is applied to edge word lines coupled to memory cells that are nearest to select transistors. As a result, an electric field between the memory cells coupled to the edge word lines and the select transistors is weakened, and the energy of the hot electrons is reduced.
摘要翻译： 一种用于防止在NAND闪速存储器件中由热电子产生的程序干扰的方法。 施加到低于施加到其它字线的编程禁止电压的通道增强干扰防止电压被施加到耦合到最接近选择晶体管的存储器单元的边缘字线。 结果，耦合到边缘字线和选择晶体管的存储单元之间的电场被削弱，并且热电子的能量减小。
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