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    METHOD AND APPARATUS FOR PROVIDING PRECURSOR GAS TO A PROCESSING CHAMBER
    1.
    发明申请
    METHOD AND APPARATUS FOR PROVIDING PRECURSOR GAS TO A PROCESSING CHAMBER 有权
    将前期气体提供给加工室的方法和装置

    公开(公告)号：US20070110898A1

    公开(公告)日：2007-05-17

    申请号：US11613153

    申请日：2006-12-19

    申请人： Seshadri Ganguli ,  Ling Chen ,  Vincent Ku

    发明人： Seshadri Ganguli ,  Ling Chen ,  Vincent Ku

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister. The apparatus further may contain a plurality of baffles within the interior volume extending between the top and the bottom of the canister, and a precursor slurry contained within the interior volume, wherein the precursor slurry contains a solid precursor material and a thermally conductive material that is unreactive towards the solid precursor material. In one example, the solid precursor material solid precursor material is pentakis(dimethylamino) tantalum.

    摘要翻译： 在一个实施方案中，提供了一种用于产生气相沉积处理系统中使用的气态化学前体的装置，其包括一个罐，该罐包括侧壁，顶部和包围内部容积的底部，入口和出口在流体 与内部容积的连通，以及从入口延伸到罐中的入口管。 该装置还可以在内部容积内容纳多个挡板，其在罐的顶部和底部之间延伸，以及包含在内部容积内的前体浆料，其中前体浆料包含固体前体材料和导热材料， 对固体前体材料没有反应。 在一个实例中，固体前体材料固体前体材料是五（二甲基氨基）钽。

    METHOD FOR PROVIDING GAS TO A PROCESSING CHAMBER
    2.
    发明申请
    METHOD FOR PROVIDING GAS TO A PROCESSING CHAMBER 有权
    将气体提供给加工室的方法

    公开(公告)号：US20070089817A1

    公开(公告)日：2007-04-26

    申请号：US11563830

    申请日：2006-11-28

    申请人： Seshadri Ganguli ,  Ling Chen ,  Vincent Ku

    发明人： Seshadri Ganguli ,  Ling Chen ,  Vincent Ku

    IPC分类号： C06B45/10 ,  C06B31/28

    CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.

    摘要翻译： 提供了一种用于产生用于处理系统的气体的方法和装置。 在一个实施例中，一种用于产生用于处理系统的气体的装置包括：罐，其具有设置在两个端口之间的至少一个挡板并且容纳前体材料。 当在限定的压力下加热到限定的温度时，前体材料适于产生气体蒸气。 挡板迫使载气在入口和出口之间延伸平均路径。 在另一个实施例中，一种用于产生气体的装置包括一个罐，该罐具有一个管，其引导流入罐中的载气远离设置在罐内的前体材料。

    APPARATUS AND METHOD FOR GENERATING A CHEMICAL PRECURSOR
    5.
    发明申请
    APPARATUS AND METHOD FOR GENERATING A CHEMICAL PRECURSOR 有权
    用于生成化学前体的装置和方法

    公开(公告)号：US20060257295A1

    公开(公告)日：2006-11-16

    申请号：US11383642

    申请日：2006-05-16

    申请人： Ling Chen ,  Vincent Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

    发明人： Ling Chen ,  Vincent Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

    IPC分类号： B01J8/18

    CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.

    摘要翻译： 提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。 罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。 在一个实施例中，挡板包含在位于罐底部的预制插入件上。 在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。 入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

    SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINING PRECURSOR AND A NITROGEN-CONTAINING PRECURSOR
    7.
    发明申请
    SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINING PRECURSOR AND A NITROGEN-CONTAINING PRECURSOR 有权
    使用含TANTALUM的前驱体和含氮的前驱体的氮化钛的顺序沉积

    公开(公告)号：US20090197406A1

    公开(公告)日：2009-08-06

    申请号：US12417439

    申请日：2009-04-02

    申请人： Wei Cao ,  Hua Chung ,  Vincent Ku ,  Ling Chen

    发明人： Wei Cao ,  Hua Chung ,  Vincent Ku ,  Ling Chen

    IPC分类号： H01L21/768 ,  H01L21/3205

    CPC分类号： C23C16/4408 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45557 ,  H01L21/28562

    摘要： Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.

    摘要翻译： 本发明的实施例提供了一种通过采用原子层沉积（ALD）工艺在衬底上形成氮化钽材料的方法。 该方法包括将安瓿内的钽前体加热至预定温度以形成钽前体气体，并将基底依次暴露于钽前体气体和氮气前体以形成氮化钽材料。 此后，可以在基板上沉积成核层和体层。 在一个实例中，在等离子体增强的ALD工艺期间可以由氮前体形成自由基氮化合物。 氮前体可以包括氮或氨。 在另一个实例中，在沉积过程中可以使用金属 - 有机钽前体。

    Valve design and configuration for fast delivery system
    8.
    发明申请
    Valve design and configuration for fast delivery system 审中-公开
    阀门设计和配置快速输送系统

    公开(公告)号：US20060213558A1

    公开(公告)日：2006-09-28

    申请号：US11432101

    申请日：2006-05-11

    申请人： Vincent Ku ,  Ling Chen ,  Dien-Yeh Wu

    发明人： Vincent Ku ,  Ling Chen ,  Dien-Yeh Wu

    IPC分类号： F16K49/00

    CPC分类号： F16K7/16 ,  F16K27/0236 ,  F16K27/029 ,  Y10T137/4259 ,  Y10T137/6606 ,  Y10T137/86389 ,  Y10T137/8766 ,  Y10T137/87684

    摘要： Embodiments of the invention relate to an apparatus for rapid delivery of pulses of one or more reactants to a substrate processing chamber. In one embodiment, a valve assembly includes a valve body having at least two ports comprising a purge inlet and an outlet, a valve seat surrounding one of the ports, an annular groove formed around the valve seat coupling the purge inlet and the outlet, and a diaphragm assembly. The diaphragm assembly further includes a diaphragm movable to contact the valve seat, a piston coupled to the diaphragm, and a cylinder to house the piston. In another embodiment, the cylinder forms an actuation chamber having an internal volume of about 3.0 cm3.

    摘要翻译： 本发明的实施例涉及一种用于将一种或多种反应物的脉冲快速传递到衬底处理室的装置。 在一个实施例中，阀组件包括具有至少两个端口的阀体，所述至少两个端口包括净化入口和出口，围绕所述端口中的一个的阀座，围绕联接净化入口和出口的阀座形成的环形槽，以及 隔膜组件。 隔膜组件还包括可移动以接触阀座的隔膜，联接到隔膜的活塞以及容纳活塞的气缸。 在另一个实施例中，气缸形成具有约3.0cm 3内部体积的致动室。

    Gas delivery apparatus and method for atomic layer deposition
    9.
    发明申请
    Gas delivery apparatus and method for atomic layer deposition 有权

    公开(公告)号：US20050173068A1

    公开(公告)日：2005-08-11

    申请号：US11077753

    申请日：2005-03-11

    申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

    发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

    IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  C23F1/00

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

    摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

    ATOMIC LAYER DEPOSITION PROCESS
    10.
    发明申请
    ATOMIC LAYER DEPOSITION PROCESS 审中-公开
    原子层沉积过程

    公开(公告)号：US20080038463A1

    公开(公告)日：2008-02-14

    申请号：US11873885

    申请日：2007-10-17

    申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

    发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

    IPC分类号： C23C16/00

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

    摘要： In one embodiment, a method for depositing a material on a substrate during an atomic layer deposition (ALD) process is provided which includes positioning the substrate on a substrate support within a process chamber, flowing a carrier gas into an expanding channel to form a circular flow of the carrier gas, exposing the substrate to the circular flow, pulsing a first reactant gas into the circular flow, and depositing a material onto the substrate. The method further provides that the process chamber has a chamber lid containing a centrally positioned expanding channel, a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, at least two gas inlets in fluid communication with the expanding channel, and at least two conduits positioned to provide a gas flow having a circular pattern within the expanded channel.

    摘要翻译： 在一个实施例中，提供了在原子层沉积（ALD）工艺期间在衬底上沉积材料的方法，其包括将衬底定位在处理室内的衬底支撑件上，使载气流入扩展通道以形成圆形 载气的流动，将基底暴露于圆形流动，将第一反应气体脉冲成圆形流，以及将材料沉积到基底上。 该方法还提供了处理室，其具有容纳中心定位的扩张通道的腔室盖，从膨胀通道延伸到腔室盖的周边部分的锥形底面，与扩张通道流体连通的至少两个气体入口， 以及至少两个管道，其定位成在膨胀通道内提供具有圆形图案的气流。