摘要:
There is provided a semiconductor light emitting diode (LED) chip including: a semiconductor light emitting diode unit including a light-transmissive substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on an upper surface of the light-transmissive substrate; a rear reflective laminate including an auxiliary optical layer formed on a lower surface of the light-transmissive substrate and made of a material having a predetermined refractive index and a metal reflective film formed on a lower surface of the auxiliary optical layer; and a bonding laminate provided on a lower surface of the rear reflective laminate and including a bonding metal layer made of a eutectic metal material and an anti-diffusion film formed to prevent diffusion of elements between the bonding metal layer and the metal reflective film.
摘要:
A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.
摘要:
A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.
摘要:
There is provided a method of manufacturing a wavelength converted LED chip, including attaching a plurality of LED chips to a chip alignment region of an upper surface of a temporary support plate, forming a conductive bump on the electrode of the respective LED chips, forming a phosphor-containing resin encapsulation part in the chip alignment region to cover the conductive bump, polishing the phosphor containing resin encapsulation part, forming the wavelength converted LED chips by cutting the provided phosphor containing resin encapsulation part between the LED chips, the wavelength converted LED chip including a wavelength conversion layer obtained from the phosphor containing resin encapsulation part and formed on lateral surfaces and an upper surface of the wavelength converted LED chip, and removing the temporary support plate from the wavelength converted LED chip.
摘要:
There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate.
摘要:
Disclosed herein is a safety outlet. The safety outlet includes a casing having at least one hole into which a pin of a plug is inserted; and at least one drain pipe forming a drain channel for independently communicating the at least one hole and the outside of the casing; wherein the drain channel provided in the at least one drain pipe each serves as drain passage separated from each other, and the drain pipe is partitioned so as to maintain sealing between inside of the casing and the drain channel, wherein a contact portion connected to a power terminal arranged outside of the at least one drain pipe is provided in the at least one drain pipe.
摘要:
The present invention relates to a solid oxide fuel cell having a gradient structure in which pore size becomes gradually smaller from a porous electrode to an electrolyte thin film in order to form a dense electrolyte thin film of less than about 2 microns and preferably less than 1 micron on the porous electrode.
摘要:
There are provided a multilayer ceramic electronic component and a method of manufacturing the same, the multilayer ceramic electronic including: a ceramic body; and a plurality of internal electrodes laminated within the ceramic body, wherein, when T1 is the greatest distance between an upper outermost internal electrode and a lower outermost internal electrode among the plurality of internal electrodes and T2 is the distance between the highest point and the lowest point in each of the upper outermost internal electrode and the lower outermost internal electrode in a thickness direction of the ceramic body, T2/T1
摘要:
Disclosed herein is a technique of deriving a parking trajectory for a vehicle. In the technique, a first extension straight line, which includes a linear travel path of the vehicle when the vehicle initially goes in reverse from a neutral position of a steering angle, is calculated upon the vehicle being to go in reverse. A final parking location is obtained based on a calculated length of a parking space and a parking target location in the parking space, and a second extension straight line which includes the final parking location is calculated therefrom. When the vehicle going in reverse along the first extension straight line turns and goes in reverse towards the second extension straight line, an intermediate extension straight line connecting the first extension straight line and the second extension straight line is calculated so that the vehicle is aligned with the second extension straight line.
摘要:
A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas. In the mixed gas, silane gas is in a ratio of 8 to 10 relative to mixed gas.