公开(公告)号：US08715856B2

公开(公告)日：2014-05-06

申请号：US13223731

申请日：2011-09-01

申请人： Seungeun Choi ,  Eunyoung Goh ,  Hyang Mok Lee ,  Heegyoung Kang ,  Sangbaek Ryu ,  Kiwoong Kim

发明人： Seungeun Choi ,  Eunyoung Goh ,  Hyang Mok Lee ,  Heegyoung Kang ,  Sangbaek Ryu ,  Kiwoong Kim

IPC分类号： H01M2/02 ,  H01M2/16 ,  H01M4/52 ,  H01M4/50 ,  H01M4/62 ,  H01M4/131

CPC分类号： H01M4/525 ,  H01M2/1646 ,  H01M2/1653 ,  H01M2/166 ,  H01M2/1673 ,  H01M4/364 ,  H01M4/505 ,  H01M4/622 ,  H01M4/623 ,  H01M10/052 ,  H01M2004/028 ,  Y02T10/7011

摘要： Disclosed is a secondary battery including a cathode, an anode, a membrane and an electrolyte, wherein the cathode contains a mixture of a first cathode material defined herein and a second cathode material selected from the group consisting of a second-(a) cathode material defined herein and a second-(b) cathode material defined herein, and a combination thereof, wherein a mix ratio of the two cathode materials (first cathode material: second cathode material) is 50:50 to 90:10, and the membrane is an organic/inorganic composite porous membrane including (a) a polyolefin-based membrane substrate and (b) an active layer in which one or more areas selected from the group consisting of the surface of the substrate and a portion of pores of the substrate are coated with a mixture of inorganic particles and a binder polymer, wherein the active layer has a structure in which the inorganic particles are interconnected and fixed through a binder polymer and porous structures are formed by the interstitial volume between the inorganic particles.

摘要翻译： 公开了包括阴极，阳极，膜和电解质的二次电池，其中阴极包含本文定义的第一阴极材料和第二阴极材料的混合物，第二阴极材料选自第二 - （a）阴极材料 本文定义的第二（b）阴极材料及其组合，其中两种阴极材料（第一阴极材料：第二阴极材料）的混合比为50:50至90:10，膜为 有机/无机复合多孔膜，其包含（a）聚烯烃类膜基材和（b）活性层，其中从由所述基材的表面和所述基材的孔的一部分组成的组中选择的一个或多个区域为 涂覆有无机颗粒和粘合剂聚合物的混合物，其中活性层具有其中无机颗粒通过粘合剂聚合物互连和固定的结构，并且多孔结构由 无机颗粒之间的间隙体积。

公开(公告)号：US08603676B2

公开(公告)日：2013-12-10

申请号：US13223754

申请日：2011-09-01

申请人： Seungeun Choi ,  Eunyoung Goh ,  Hyang Mok Lee ,  Heegyoung Kang ,  Sangbaek Ryu ,  Kiwoong Kim

发明人： Seungeun Choi ,  Eunyoung Goh ,  Hyang Mok Lee ,  Heegyoung Kang ,  Sangbaek Ryu ,  Kiwoong Kim

IPC分类号： H01M4/52 ,  H01M4/50 ,  H01M4/131

CPC分类号： H01M4/364 ,  H01M2/0287 ,  H01M2/1633 ,  H01M2/1646 ,  H01M2/1653 ,  H01M2/166 ,  H01M2/1673 ,  H01M4/131 ,  H01M4/505 ,  H01M4/525 ,  H01M4/622 ,  H01M4/623 ,  H01M10/052 ,  H01M2004/028 ,  Y02E60/122 ,  Y02T10/7011

摘要： Disclosed is a cathode material comprising a mixture of an oxide powder (a) defined herein and an oxide powder (b) selected from the group consisting of an oxide powder (b1) defined herein and an oxide powder (b2) defined herein and a combination thereof wherein a mix ratio of the two oxide powders (oxide powder (a):oxide powder (b)) is 50:50 to 90:10. The cathode material uses a combination of an oxide powder (a) and 50% or less of an oxide powder (b) which can exert high capacity, high cycle stability, superior storage stability and high-temperature stability, thus advantageously exhibiting high energy density and realizing high capacity batteries.

摘要翻译： 公开了一种阴极材料，其包含本文定义的氧化物粉末（a）和选自本文定义的氧化物粉末（b1）和本文定义的氧化物粉末（b2）的氧化物粉末（b）的混合物和组合 其中两种氧化物粉末（氧化物粉末（a）：氧化物粉末（b））的混合比为50:50至90:10。 阴极材料使用氧化物粉末（a）和50％以下的能够发挥高容量，高循环稳定性，优异的储存稳定性和高温稳定性的氧化物粉末（b）的组合，因此有利地表现出高能量密度 并实现高容量电池。

公开(公告)号：US20100075210A1

公开(公告)日：2010-03-25

申请号：US12309780

申请日：2007-07-27

申请人： Hyang Mok Lee ,  Oh Young Hyun ,  Kiwoong Kim ,  Sung-Mok Lim

发明人： Hyang Mok Lee ,  Oh Young Hyun ,  Kiwoong Kim ,  Sung-Mok Lim

IPC分类号： H01M6/10 ,  H01M2/16 ,  H01M4/58

CPC分类号： H01M16/003 ,  H01M4/587 ,  H01M10/052

摘要： Disclosed herein are a hybrid type electrode assembly including a plurality of electrode groups that can be charged and discharged, wherein the respective electrode groups are constructed in a structure in which a cathode and an anode are opposite to each other while a separator is disposed between the cathode and the anode, and at least one of the electrode groups is a capacitor type electrode group, and a secondary battery including the same. In the hybrid type electrode assembly according to the present invention, a coupled system of a capacitor and a secondary battery is embodied in a single cell through a simplified manufacturing process. Consequently, the present invention has the effect of reducing the manufacturing costs of the battery cell and improving the pulse charge and discharge characteristics without the degeneration of capacity.

摘要翻译： 本文公开了一种混合型电极组件，其包括可以进行充电和放电的多个电极组，其中各个电极组以其中阴极和阳极彼此相对的结构构造，而隔板设置在 阴极和阳极，并且至少一个电极组是电容器型电极组，以及包括该电极组的二次电池。 在根据本发明的混合型电极组件中，电容器和二次电池的耦合系统通过简化的制造工艺实现在单个电池中。 因此，本发明具有降低电池单元的制造成本和提高脉冲充电和放电特性而没有容量退化的效果。

公开(公告)号：US08574736B2

公开(公告)日：2013-11-05

申请号：US12309780

申请日：2007-07-27

申请人： Hyang Mok Lee ,  Oh Young Hyun ,  Kiwoong Kim ,  Sung-Mok Lim

发明人： Hyang Mok Lee ,  Oh Young Hyun ,  Kiwoong Kim ,  Sung-Mok Lim

IPC分类号： H01M4/00

CPC分类号： H01M16/003 ,  H01M4/587 ,  H01M10/052

摘要： Disclosed herein are a hybrid type electrode assembly including a plurality of electrode groups that can be charged and discharged, wherein the respective electrode groups are constructed in a structure in which a cathode and an anode are opposite to each other while a separator is disposed between the cathode and the anode, and at least one of the electrode groups is a capacitor type electrode group, and a secondary battery including the same. In the hybrid type electrode assembly according to the present invention, a coupled system of a capacitor and a secondary battery is embodied in a single cell through a simplified manufacturing process. Consequently, the present invention has the effect of reducing the manufacturing costs of the battery cell and improving the pulse charge and discharge characteristics without the degeneration of capacity.

摘要翻译： 本文公开了一种混合型电极组件，其包括可以进行充电和放电的多个电极组，其中各个电极组以其中阴极和阳极彼此相对的结构构造，而隔板设置在 阴极和阳极，并且至少一个电极组是电容器型电极组，以及包括该电极组的二次电池。 在根据本发明的混合型电极组件中，电容器和二次电池的耦合系统通过简化的制造工艺实现在单个电池中。 因此，本发明具有降低电池单元的制造成本和提高脉冲充电和放电特性而没有容量退化的效果。

公开(公告)号：US10147873B2

公开(公告)日：2018-12-04

申请号：US15870854

申请日：2018-01-12

申请人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

发明人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

IPC分类号： H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.

公开(公告)号：US09570673B2

公开(公告)日：2017-02-14

申请号：US14794796

申请日：2015-07-08

申请人： Yongsung Park ,  Kiwoong Kim ,  Sangyong Kim ,  Sechung Oh ,  Youngman Jang

发明人： Yongsung Park ,  Kiwoong Kim ,  Sangyong Kim ,  Sechung Oh ,  Youngman Jang

IPC分类号： H01L21/00 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.

摘要翻译： 提供制造MRAM器件的方法与用于制造MRAM器件的处理设备一起提供。 所述方法可以包括形成铁磁层，将铁磁层冷却至约50°K至约300°K范围内的温度，形成和氧化冷却的铁磁层上的一个或多个Mg层以形成MgO结构， 在MgO结构上形成自由层，并在自由层上形成覆盖层。

公开(公告)号：US09136556B2

公开(公告)日：2015-09-15

申请号：US13582250

申请日：2011-03-31

申请人： Jihoon Cho ,  Dongmyung Kim ,  Kiwoong Kim ,  Sung-Min Hwang ,  Hyun-Chul Jung ,  Sungjin Kwon ,  Hyeong Kim ,  Ki Hong Min

发明人： Jihoon Cho ,  Dongmyung Kim ,  Kiwoong Kim ,  Sung-Min Hwang ,  Hyun-Chul Jung ,  Sungjin Kwon ,  Hyeong Kim ,  Ki Hong Min

IPC分类号： H01M10/04 ,  H01M2/16 ,  H01M2/18 ,  H01M10/0525 ,  H01M10/058 ,  H01M2/02 ,  H01M2/34

CPC分类号： H01M10/0431 ,  H01M2/021 ,  H01M2/0212 ,  H01M2/1653 ,  H01M2/1686 ,  H01M2/18 ,  H01M2/34 ,  H01M10/0436 ,  H01M10/0525 ,  H01M10/058 ,  Y02E60/122 ,  Y02P70/54 ,  Y10T29/49204

摘要： Disclosed herein is an electrode assembly of a cathode/separator/anode structure, wherein a plurality of first unit electrodes and a second electrode sheet are wound so that the first unit electrodes are opposite to the second electrode sheet via a separator sheet, and a first electrode and a second electrode have opposite polarities.

摘要翻译： 本文公开了一种阴极/隔板/阳极结构的电极组件，其中缠绕多个第一单元电极和第二电极片，使得第一单元电极经由隔离片与第二电极片相对，并且第一 电极和第二电极具有相反的极性。

公开(公告)号：US09997699B2

公开(公告)日：2018-06-12

申请号：US15158575

申请日：2016-05-18

申请人： Juhyun Kim ,  Kiwoong Kim ,  Sechung Oh ,  Woochang Lim

发明人： Juhyun Kim ,  Kiwoong Kim ,  Sechung Oh ,  Woochang Lim

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： H01L43/12 ,  H01L43/08

摘要： A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.

公开(公告)号：US20070296409A1

公开(公告)日：2007-12-27

申请号：US11496304

申请日：2006-07-31

申请人： Jin-Mok Kim ,  Yong-Ho Lee ,  Hyukchan Kwon ,  Kiwoong Kim

发明人： Jin-Mok Kim ,  Yong-Ho Lee ,  Hyukchan Kwon ,  Kiwoong Kim

IPC分类号： G01N27/72

CPC分类号： G01R33/0356

摘要： The present invention relates to a reference-current optimizing apparatus of a double relaxation oscillation SQUID. According to the present invention, the optimizing apparatus is connected to a RJ-DROS in order to vary a reference current. Accordingly, the DROS can have a high response level and can operate stably, by controlling a magnetic flux-voltage conversion characteristic. Furthermore, when the RJ-DROS is fabricated, reference junctions having different critical currents are controlled to have the same reference current. Therefore, the reference junctions can have the same magnetic flux-voltage characteristic. In addition, a preamplifier having a plurality of junction bipolar transistors serves to prevent an input application current of the preamplifier from flowing into the optimizing apparatus when the output of a reference junction is detected. This enables the DROS to operate normally.

摘要翻译： 本发明涉及双弛豫振荡SQUID的参考电流优化装置。 根据本发明，优化装置连接到RJ-DROS以改变参考电流。 因此，通过控制磁通电压转换特性，DROS可以具有高响应水平并且可以稳定地运行。 此外，当制造RJ-DROS时，具有不同临界电流的参考接点被控制为具有相同的参考电流。 因此，参考接头可以具有相同的磁通电压特性。 此外，具有多个结双极晶体管的前置放大器用于在检测到参考结的输出时防止前置放大器的输入施加电流流入最优化装置。 这使DROS能够正常运行。

公开(公告)号：US09905753B2

公开(公告)日：2018-02-27

申请号：US15157399

申请日：2016-05-17

申请人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

发明人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

IPC分类号： H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.