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    Chuck having pressurized zones of heat transfer gas
    1.
    发明授权
    Chuck having pressurized zones of heat transfer gas 有权
    夹头具有加热区的传热气体

    公开(公告)号：US06320736B1

    公开(公告)日：2001-11-20

    申请号：US09312909

    申请日：1999-05-17

    申请人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Siamak Salimian ,  Hamid Noorbakhsh ,  Efrain Quiles ,  Dennis S. Grimard

    发明人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Siamak Salimian ,  Hamid Noorbakhsh ,  Efrain Quiles ,  Dennis S. Grimard

    IPC分类号： H01H2300

    CPC分类号： H01L21/6831 ,  C23C16/4586

    摘要： A chuck 28 for holding a substrate 4 comprises a surface 27 capable of receiving the substrate 4, the surface 27 having a gas inlet port 40 and a gas exhaust port 42. A non-sealing protrusion is between the gas inlet port 40 and the gas exhaust port 42. The non-sealing protrusion 44 impedes the flow of heat transfer gas between the gas inlet port 40 and the gas exhaust port 42 without blocking the flow of heat transfer gas. Preferably, a sealing protrusion 46 is provided around the periphery of the chuck 28 to form a substantially gas-tight seal with the substrate 4 to enclose and prevent leakage of heat transfer gas into a surrounding chamber 6.

    摘要翻译： 用于保持基板4的卡盘28包括能够接收基板4的表面27，表面27具有气体入口40和排气口42.非密封突起在气体入口40和气体 排气口42.非密封突起44阻止气体入口40和排气口42之间的传热气体的流动，而不阻碍传热气体的流动。 优选地，密封突起46设置在卡盘28的周边周围，以与基底4形成基本上气密的密封，以封闭并防止传热气体泄漏到周围室6中。

    High density plasma process chamber
    5.
    发明授权
    High density plasma process chamber 失效
    高密度等离子体处理室

    公开(公告)号：US6095084A

    公开(公告)日：2000-08-01

    申请号：US893599

    申请日：1997-07-14

    申请人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

    发明人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

    IPC分类号： C23C16/00

    CPC分类号： C23C16/00

    摘要： A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.

    摘要翻译： 用于处理等离子体中的半导体衬底60的处理室55包括用于将处理气体分配到室中的等离子体区65中的处理气体分配器100。 电感天线135用于从等离子体区域中的处理气体形成感应等离子体。 腔室55的天花板140上的主偏压电极145具有暴露于等离子体区域65的导电表面150.包括嵌入其中的功率电极165的电介质构件155具有用于接收衬底60的接收表面。次级偏压 在电介质构件155下方的电极170具有暴露于等离子体区65的导电表面175.电极电压源180​​将功率电极165，初级偏压电极145和次级偏置电极170保持在不同的电位以提供高密度 ，在室55的等离子体区65中的高度方向性的等离子体。

    Plasma chamber support having dual electrodes
    9.
    发明授权
    Plasma chamber support having dual electrodes 有权
    具有双电极的等离子体室支撑

    公开(公告)号：US06478924B1

    公开(公告)日：2002-11-12

    申请号：US09513992

    申请日：2000-03-07

    申请人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

    发明人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

    IPC分类号： H05H100

    CPC分类号： H01J37/32706 ,  H01L21/6833 ,  Y10T279/23

    摘要： A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.

    摘要翻译： 能够处理等离子体中的衬底50的处理室110包括覆盖第一电极220和第二电极230的电介质210，支撑电介质210的导体250以及向第一电极提供RF电压的电压源170 220或电介质210中的第二电极230.第一电极220与处理电极225电容耦合以激励处理室110中的处理气体，并且施加到第二电极230的RF电压电容耦合到导体250并且通过 套环260或第二电极230通过套环260直接电容耦合。