公开(公告)号：US20110074996A1

公开(公告)日：2011-03-31

申请号：US12568696

申请日：2009-09-29

申请人： Shen Wang ,  Christopher Parks

发明人： Shen Wang ,  Christopher Parks

IPC分类号： H04N5/335

CPC分类号： H04N5/37213

摘要： An output circuit in a charge-coupled device (CCD) image sensor includes a charge-to-voltage conversion region, a gain control transistor connected to the charge-to-voltage conversion region and a reset transistor connected in series with the gain control transistor. One or more additional gain control transistors can be connected between the reset transistor and the gain control transistor. The one or more gain control transistors are used to set a capacitance of the charge-to-voltage conversion region to two or more difference capacitance levels. For each capacitance level, a reset voltage and a signal voltage are measured from the charge-to-voltage conversion region. A signal processing device computes multiple signal values for a single charge packet using the measured reset and signal voltages. The signal processing device selects one of the multiple signal values to be the signal value for the pixel.

摘要翻译： 电荷耦合器件（CCD）图像传感器中的输出电路包括电荷 - 电压转换区域，连接到电荷 - 电压转换区域的增益控制晶体管和与增益控制晶体管串联连接的复位晶体管 。 一个或多个附加的增益控制晶体管可以连接在复位晶体管和增益控制晶体管之间。 一个或多个增益控制晶体管用于将电荷 - 电压转换区域的电容设置为两个或更多个不同的电容电平。 对于每个电容电平，从电荷到电压转换区域测量复位电压和信号电压。 信号处理装置使用所测量的复位和信号电压来计算单个电荷包的多个信号值。 信号处理装置选择多个信号值中的一个作为像素的信号值。

公开(公告)号：US20060038203A1

公开(公告)日：2006-02-23

申请号：US10924061

申请日：2004-08-23

申请人： Shen Wang ,  William DesJardin ,  Robert Fabinski ,  David Nichols ,  Christopher Parks ,  Eric Stevens

发明人： Shen Wang ,  William DesJardin ,  Robert Fabinski ,  David Nichols ,  Christopher Parks ,  Eric Stevens

IPC分类号： H01L27/148

CPC分类号： H01L27/14601 ,  H01L27/14623 ,  H01L27/14806

摘要： A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferring charge in a second direction from the plurality of the image pixels for further processing; an amplifier structure disposed in the substrate that receives the charge from the transfer mechanism and converts the charge into a voltage signal; a first opaque layer spanning over the amplifier for blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied; and a second opaque layer deposited into the substrate for also blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied.

摘要翻译： 电荷耦合器件包括衬底; 在基板中以二维阵列布置的多个图像像素，用于捕获图像的电子表示并用于沿第一方向传送电荷; 用于从多个图像像素沿第二方向传送电荷以用于进一步处理的传送机构; 放大器结构，设置在所述基板中，从所述传送机构接收所述电荷并将所述电荷转换为电压信号; 跨越放大器的第一不透明层，用于阻挡当施加电压时由放大器结构内的电场固有地产生的近红外光; 以及沉积到衬底中的第二不透明层，用于当施加电压时也阻挡由放大器结构内的电场固有地产生的近红外光。

公开(公告)号：US07402882B2

公开(公告)日：2008-07-22

申请号：US10924061

申请日：2004-08-23

申请人： Shen Wang ,  William F. DesJardin ,  Robert P. Fabinski ,  David N. Nichols ,  Christopher Parks ,  Eric G. Stevens

发明人： Shen Wang ,  William F. DesJardin ,  Robert P. Fabinski ,  David N. Nichols ,  Christopher Parks ,  Eric G. Stevens

IPC分类号： H01L29/72

CPC分类号： H01L27/14601 ,  H01L27/14623 ,  H01L27/14806

摘要： A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferring charge in a second direction from the plurality of the image pixels for further processing; an amplifier structure disposed in the substrate that receives the charge from the transfer mechanism and converts the charge into a voltage signal; a first opaque layer spanning over the amplifier for blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied; and a second opaque layer deposited into the substrate for also blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied.

摘要翻译： 电荷耦合器件包括衬底; 在基板中以二维阵列布置的多个图像像素，用于捕获图像的电子表示并用于沿第一方向传送电荷; 用于从多个图像像素沿第二方向传送电荷以用于进一步处理的传送机构; 放大器结构，设置在所述基板中，从所述传送机构接收所述电荷并将所述电荷转换为电压信号; 跨越放大器的第一不透明层，用于阻挡当施加电压时由放大器结构内的电场固有地产生的近红外光; 以及沉积到衬底中的第二不透明层，用于当施加电压时也阻挡由放大器结构内的电场固有地产生的近红外光。

公开(公告)号：US11420888B2

公开(公告)日：2022-08-23

申请号：US16993248

申请日：2020-08-13

申请人： HUNAN SCIENTOP AUTOMATIC EQUIPMENT SHARES CO. LTD ,  HUNAN SAKAL ENVIRONMENTAL SCIENCE AND TECHNOLOGY CO., LTD. ,  Shen Wang

发明人： Shen Wang ,  Yunliang Liu

IPC分类号： C02F3/08 ,  C02F3/06 ,  C02F101/30

摘要： The present invention discloses a treatment process for a submerged lifting circulation type bio-membrane filter, wherein the treatment process comprises the following steps: two groups of symmetrically staggered filter curtains (2A and 2B) are adopted; the two groups of filter curtains (2A and 2B) are periodically lifted up and down in a reciprocating manner in a biofilter (1) under the action of a lifting mechanism (4), so that bio-membranes on the two groups of filter curtains (2A and 2B) are in contact with the atmosphere and sewage in turns, absorb organic matters in the sewage when lifting down for submerging, absorb oxygen when lifting up and exposing into to the atmosphere, and bring oxygen into the sewage and cause sewage turbulence in a water tank when lifting down for submerging again, so that the dissolved oxygen is uniformly distributed, thereby purifying the sewage.

公开(公告)号：US08691345B2

公开(公告)日：2014-04-08

申请号：US12946260

申请日：2010-11-15

申请人： Shen Wang

发明人： Shen Wang

IPC分类号： B05D1/00 ,  B41J29/38

CPC分类号： B41J11/0015

摘要： A method comprising an algorithm for automatically detecting an object in a digital image in order to determine if a scent can be associated with the detected object and applying the scent to the print medium, and a printer equipped to apply the scent.

摘要翻译： 一种方法，包括用于自动检测数字图像中的对象的算法，以便确定香味是否可以与检测到的对象相关联并将香味施加到打印介质上，以及配备有应用香味的打印机。

公开(公告)号：US08605187B2

公开(公告)日：2013-12-10

申请号：US12475825

申请日：2009-06-01

申请人： Shen Wang ,  Eric J. Meisenzahl ,  David N. Nichols

发明人： Shen Wang ,  Eric J. Meisenzahl ,  David N. Nichols

IPC分类号： H01L27/15 ,  H04N5/335

CPC分类号： H01L27/14887

摘要： A charge-coupled device (CCD) image sensor includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple phases that are used to shift photo-generated charge through the horizontal CCD channel region. Distinct overflow drain regions are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region. A buffer region of the second conductivity type can be used to electrically connect each overflow drain to the one particular phase of the horizontal CCD channel. Multiple barrier regions are disposed in the layer of semiconductor material, with each barrier region disposed between each overflow drain and the one particular phase electrically connected to the drain.

摘要翻译： 电荷耦合器件（CCD）图像传感器包括具有第一导电类型的半导体材料层。 第二导电类型的水平CCD沟道区设置在半导体材料的层中。 水平CCD通道区域包括用于将光电荷移动通过水平CCD通道区域的多个相位。 不同的溢出漏极区域设置在半导体材料层中，溢出漏极区域仅电连接到水平CCD沟道区域的一个特定相位。 可以使用第二导电类型的缓冲区域将每个溢出漏极电连接到水平CCD通道的一个特定相位。 多个屏障区域设置在半导体材料层中，每个屏障区域设置在每个溢流漏极和电连接到漏极的一个特定相之间。

公开(公告)号：US20130103639A1

公开(公告)日：2013-04-25

申请号：US13281242

申请日：2011-10-25

申请人： Steven Greenberg ,  Michael Hopkins Smith ,  Vijayalakshmi Ramkumar ,  Brian Eugene Kihneman ,  Alexander Alexandrovich Spiridonov ,  David Michael Jade ,  Shen Wang ,  Sumit Chauhan ,  Gregory Chan ,  Tobias Joakim Bertil Ternström ,  Russell Mark Sinclair ,  Todd Haugen ,  Ritu Singh ,  Daniel J. Cole ,  Peter Alan Carlin ,  Christopher Todd Seitzinger

发明人： Steven Greenberg ,  Michael Hopkins Smith ,  Vijayalakshmi Ramkumar ,  Brian Eugene Kihneman ,  Alexander Alexandrovich Spiridonov ,  David Michael Jade ,  Shen Wang ,  Sumit Chauhan ,  Gregory Chan ,  Tobias Joakim Bertil Ternström ,  Russell Mark Sinclair ,  Todd Haugen ,  Ritu Singh ,  Daniel J. Cole ,  Peter Alan Carlin ,  Christopher Todd Seitzinger

IPC分类号： G06F17/30 ,  G06F21/00

CPC分类号： G06F9/44 ,  G06F17/3089 ,  G06F21/31 ,  H04L67/02 ,  H04W4/60

摘要： Creating web application using cloud-based friction-free databases without web hosting knowledge. User credentials are received at a web application service for initiating a web application task via client software. The user credentials are analyzed to determine whether to grant the user permission to initiate the requested web application task. The web application task is initiated when the permission is granted. Data associated with the initiated web application task is received at the web application service for analysis of the data to host and render a web application based solely on received data provided without basis of web hosting knowledge.

摘要翻译： 使用基于云的无摩擦数据库创建Web应用程序，而不需要Web托管知识。 用户凭证在Web应用程序服务中被接收，用于通过客户端软件发起Web应用程序任务。 分析用户凭证以确定是否授予用户启动所请求的web应用程序任务的权限。 Web应用程序任务在授予权限时启动。 在Web应用服务处接收与发起的Web应用任务相关联的数据，用于分析数据以仅基于接收到的数据进行托管和呈现Web应用，而不依赖于web托管知识。

公开(公告)号：US20120322271A1

公开(公告)日：2012-12-20

申请号：US13160901

申请日：2011-06-15

申请人： Shen Wang ,  Robert P. Fabinski ,  James E. Doran ,  Laurel J. Pace ,  Eric J. Meisenzahl

发明人： Shen Wang ,  Robert P. Fabinski ,  James E. Doran ,  Laurel J. Pace ,  Eric J. Meisenzahl

IPC分类号： H01L21/31

CPC分类号： H01L23/544 ,  H01L2223/54433 ,  H01L2223/5448 ,  H01L2924/0002 ,  Y10T83/0524 ,  Y10T83/7809 ,  H01L2924/00

摘要： A semiconductor wafer includes multiple dies and a die identification region adjacent to or on each die. The die identification region can include a wafer indicator and a pattern of die locations representing die locations on the wafer. A die identification marker is provided in each pattern of die locations in the die identification region specifying a location of a respective die on the wafer.

摘要翻译： 半导体晶片包括多个管芯和与每个管芯相邻或在其上的管芯识别区域。 管芯识别区域可以包括晶片指示器和表示晶片上晶片位置的管芯位置的图案。 在芯片识别区域中的芯片位置的每个图案中提供芯片识别标记，其指定晶片上相应裸片的位置。

公开(公告)号：US20120028402A1

公开(公告)日：2012-02-02

申请号：US12845825

申请日：2010-07-29

申请人： Shen Wang

发明人： Shen Wang

IPC分类号： H01L31/18

CPC分类号： H01L27/14812 ,  H01L27/14843

摘要： A pixel array in an image sensor includes multiple pixels. The pixel array includes vertical shift registers for shifting charge out of the pixel array. The vertical shift registers can be interspersed between the pixels, such as in an interline image sensor, or the photosensitive areas in the pixels can operate as vertical shift registers. The pixels are divided into blocks of pixels. One or more electrodes are disposed over each pixel. Conductive strips are disposed over the electrodes. Contacts are used to connect selected electrodes to respective conductive strips. The contacts in at least one block of pixels are positioned according to one contact pattern while the contacts in one or more other blocks are positioned according to a different contact pattern. The different contact patterns reduce or eliminate visible patterns in the contact locations.

公开(公告)号：US08022452B2

公开(公告)日：2011-09-20

申请号：US12333532

申请日：2008-12-12

申请人： Shen Wang ,  Robert P. Fabinski ,  Robert Kaser

发明人： Shen Wang ,  Robert P. Fabinski ,  Robert Kaser

IPC分类号： H01L31/0232

CPC分类号： H01L27/14818 ,  H01L27/14623 ,  H01L27/1463 ,  H01L31/02164

摘要： A source/drain region of a transistor or amplifier is formed in a substrate layer and is connected to a voltage source. A glow blocking structure is formed at least partially around the source/drain region and is disposed between the source/drain region and an imaging array of an image sensor. A trench is formed in the substrate layer adjacent to and at least partially around the source/drain region. The glow blocking structure includes an opaque material formed in the trench and one or more layers of light absorbing material overlying the source/drain region and the opaque material.

摘要翻译： 晶体管或放大器的源极/漏极区域形成在衬底层中并连接到电压源。 至少部分地围绕源极/漏极区域形成辉光阻挡结构，并且设置在源极/漏极区域与图像传感器的成像阵列之间。 在衬底层中形成沟槽，其邻近并且至少部分地围绕源极/漏极区域。 辉光阻挡结构包括形成在沟槽中的不透明材料和覆盖源极/漏极区域和不透明材料的一层或多层光吸收材料。