公开(公告)号：US20090134442A1

公开(公告)日：2009-05-28

申请号：US12103590

申请日：2008-04-15

申请人： Shian-Jyh Lin ,  Yuan Tsung Chang ,  Shun-Fu Chen ,  Chung-Tze Lin ,  Chung-Yuan Lee ,  Tse Chuan Kuo

发明人： Shian-Jyh Lin ,  Yuan Tsung Chang ,  Shun-Fu Chen ,  Chung-Tze Lin ,  Chung-Yuan Lee ,  Tse Chuan Kuo

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L29/66621 ,  H01L27/10867 ,  H01L27/10876

摘要： A method for forming a recessed channel device includes providing a substrate with a plurality of trench capacitors formed therein, each of the trench capacitors including a plug protruding above the substrate; forming a spacer on each of the plugs; forming a plurality of trench isolations along a first direction in the substrate adjacent to the trench capacitors so as to define an active area exposing the substrate; removing a portion of the substrate by using the spacers and the trench isolations as a mask to form a recessed channel; and trimming the recessed channel so that a surface profile of the recessed channel presents a three-dimensional shape. A recessed channel device with a rounded channel profile is also provided.

摘要翻译： 用于形成凹陷通道器件的方法包括：提供其上形成有多个沟槽电容器的衬底，每个沟槽电容器包括突出在衬底上方的插头; 在每个插头上形成间隔件; 在与所述沟槽电容器相邻的所述衬底中沿着第一方向形成多个沟槽隔离，以限定暴露所述衬底的有源区; 通过使用间隔物和沟槽隔离物作为掩模去除衬底的一部分以形成凹陷沟道; 并且修整凹陷通道，使得凹陷通道的表面轮廓呈现三维形状。 还提供了具有圆形通道轮廓的凹槽通道装置。

公开(公告)号：US20090023290A1

公开(公告)日：2009-01-22

申请号：US12068943

申请日：2008-02-13

申请人： Yuan Tsung Chang ,  Chih Neng Chang ,  Bang Tai Tang

发明人： Yuan Tsung Chang ,  Chih Neng Chang ,  Bang Tai Tang

IPC分类号： H01L21/306

CPC分类号： H01L21/31053 ,  H01L21/31612

摘要： A planarization method is provided. The method includes the steps of providing a substrate with a first region and a second region, and having a plurality of protrusions of different densities on a surface of said substrate; forming a first dielectric layer on the substrate to fill spaces between the plurality of protrusions; forming a second dielectric layer on the first dielectric layer, wherein the second dielectric layer is formed with a protruding tip having a height higher than heights of the protrusions; and partially removing said first dielectric layer and said second dielectric layer to planarize said first dielectric layer and said second dielectric layer and expose top surfaces of said protrusions.

摘要翻译： 提供了一种平面化方法。 该方法包括以下步骤：在衬底的表面上提供具有第一区域和第二区域的衬底，并且具有不同密度的多个突起; 在所述基板上形成第一电介质层以填充所述多个突起之间的空间; 在所述第一电介质层上形成第二电介质层，其中所述第二电介质层形成为具有高于所述突起的高度的突出尖端; 并且部分地去除所述第一电介质层和所述第二电介质层以平坦化所述第一电介质层和所述第二电介质层并暴露所述突起的顶表面。