公开(公告)号：US20110068281A1

公开(公告)日：2011-03-24

申请号：US12882713

申请日：2010-09-15

申请人： Shigehiro HARA ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Hitoshi Higurashi ,  Shinji Sakamoto ,  Yusuke Sakai ,  Yoshihiro Okamoto ,  Akihito Anpo

发明人： Shigehiro HARA ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Hitoshi Higurashi ,  Shinji Sakamoto ,  Yusuke Sakai ,  Yoshihiro Okamoto ,  Akihito Anpo

IPC分类号： G21K5/10 ,  G03F7/20

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/31769 ,  H01J2237/31776

摘要： A charged particle beam drawing apparatus forms a map having meshes, forms representative figures, area of each representative figure in each mesh being equal to gross area of figures in each mesh, and calculates a proximity effect correction dose of the charged particle beam in each mesh on the basis of area of each representative figure in each mesh. If it is necessary to change the proximity effect correction dose of the charged particle beam for drawing at least one pattern corresponding to at least one figure, the charged particle beam drawing apparatus changes area of the at least one figure before the representative figures are formed by a representative figure forming portion, and changes the proximity effect correction dose of the charged particle beam for drawing the at least one pattern corresponding to the at least one figure, calculated by a proximity effect correction dose calculating portion.

摘要翻译： 带电粒子束描绘装置形成具有网格的图，形成代表性图，每个网格中每个代表图的面积等于每个网格中的图形的总面积，并计算每个网格中的带电粒子束的邻近效应校正剂量 在每个网格中每个代表人物的面积的基础上。 如果需要改变带电粒子束的接近效应校正剂量以绘制与至少一个图形相对应的至少一个图案，则带电粒子束描绘装置在代表性图形形成之前改变至少一个图形的面积， 代表图形形成部分，并且改变用于绘制由邻近效应校正剂量计算部分计算的与至少一个图形相对应的至少一个图案的带电粒子束的邻近效应校正剂量。

公开(公告)号：US08207514B2

公开(公告)日：2012-06-26

申请号：US12882713

申请日：2010-09-15

申请人： Shigehiro Hara ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Hitoshi Higurashi ,  Shinji Sakamoto ,  Yusuke Sakai ,  Yoshihiro Okamoto ,  Akihito Anpo

发明人： Shigehiro Hara ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Hitoshi Higurashi ,  Shinji Sakamoto ,  Yusuke Sakai ,  Yoshihiro Okamoto ,  Akihito Anpo

IPC分类号： G21K5/10

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/31769 ,  H01J2237/31776

摘要： A charged particle beam drawing apparatus forms a map having meshes, forms representative figures, area of each representative figure in each mesh being equal to gross area of figures in each mesh, and calculates a proximity effect correction dose of the charged particle beam in each mesh on the basis of area of each representative figure in each mesh. If it is necessary to change the proximity effect correction dose of the charged particle beam for drawing at least one pattern corresponding to at least one figure, the charged particle beam drawing apparatus changes area of the at least one figure before the representative figures are formed by a representative figure forming portion, and changes the proximity effect correction dose of the charged particle beam for drawing the at least one pattern corresponding to the at least one figure, calculated by a proximity effect correction dose calculating portion.

摘要翻译： 带电粒子束描绘装置形成具有网格的图，形成代表性图，每个网格中每个代表图的面积等于每个网格中的图形的总面积，并计算每个网格中的带电粒子束的邻近效应校正剂量 在每个网格中每个代表人物的面积的基础上。 如果需要改变带电粒子束的接近效应校正剂量以绘制与至少一个图形相对应的至少一个图案，则带电粒子束描绘装置在代表性图形形成之前改变至少一个图形的面积， 代表图形形成部分，并且改变用于绘制由邻近效应校正剂量计算部分计算的与至少一个图形相对应的至少一个图案的带电粒子束的邻近效应校正剂量。

公开(公告)号：US06319642B1

公开(公告)日：2001-11-20

申请号：US09275186

申请日：1999-03-23

申请人： Shigehiro Hara ,  Eiji Murakami ,  Hitoshi Higurashi ,  Toshio Yamaguchi ,  Kazuto Matsuki ,  Souji Koikari ,  Shuichi Tamamushi ,  Kazuyuki Okuzono

发明人： Shigehiro Hara ,  Eiji Murakami ,  Hitoshi Higurashi ,  Toshio Yamaguchi ,  Kazuto Matsuki ,  Souji Koikari ,  Shuichi Tamamushi ,  Kazuyuki Okuzono

IPC分类号： G03F900

CPC分类号： G03F7/704 ,  H01J37/3026 ,  H01J2237/3175

摘要： A pattern lithography system for lithographing a pattern with reference to a pattern data by deflecting an electron beam includes a controller, an extracting unit, a dividing unit, and an expansion unit. The controller analyzes the pattern data and determines stripes of the pattern to be successively lithographed. The extracting unit extracts parts of the pattern data corresponding to stripes of the pattern in response to commands from the controller and sends the data to the dividing unit. The dividing unit divides the part of the pattern data into a plurality of sub-patterns. The sub-patterns are sized smaller than a minimum deflection range of the electron beam. The expanding unit expands the sub-patterns in accordance with a command from the controller to produce stripe data for driving a lithographing unit to lithograph the stripe. Stripes may have at least one sub-pattern in common such that multiple lithography is performed.

摘要翻译： 通过偏转电子束来参考图案数据对图案进行光刻的图案光刻系统包括控制器，提取单元，分割单元和扩展单元。 控制器分析图案数据，并确定要连续刻蚀的图案的条纹。 提取单元响应于来自控制器的命令提取对应于图案条纹的图案数据的部分，并将数据发送到分割单元。 分割单元将图案数据的一部分划分成多个子图案。 子图案的尺寸小于电子束的最小偏转范围。 扩展单元根据来自控制器的命令扩展子图案，以产生用于驱动光刻单元以对该条纹进行光刻的条带数据。 条纹可以具有共同的至少一个子图案，使得执行多次光刻。

公开(公告)号：US20100178611A1

公开(公告)日：2010-07-15

申请号：US12659774

申请日：2010-03-22

申请人： Hirohito Anze ,  Takehiko Katsumata ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Rieko Nishimura ,  Makoto Hiramoto ,  Tomoo Motosugi ,  Takazuki Ohnishi

发明人： Hirohito Anze ,  Takehiko Katsumata ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Rieko Nishimura ,  Makoto Hiramoto ,  Tomoo Motosugi ,  Takazuki Ohnishi

IPC分类号： G03F7/20

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/78 ,  G03F7/0382 ,  G03F7/0392 ,  H01J37/3174

摘要： A charged particle beam writing method on a chemical amplification type resist, comprising: coating said chemical amplification type resist which contains an acid diffusion inhibitor, on a surface of a mask substrate, exposing charged particle beams to said chemical amplification type resist layer on said surface of the mask substrate, baking said chemical amplification type resist layer which said charged particle beams were exposed, and developing said chemical amplification type resist after the baking, wherein an exposure current density of said electron beams exposing ranges of 50˜5000 A/cm2, said photo acid generator is in an amount ranging from 0.1 to 30 weight percent (wt %) relative to all solid content of said chemical amplification type resist, and said acid diffusion inhibitor is composed of at least one material selected from the group consisting of tertiary amine class, benzyl-carbamate class, benzoin-carbamate class, o-carbamoyl-hydroxy-amine class, o-carbamoyl-oxime class, and dithio-calbamate-quaternary ammonium salt.

摘要翻译： 一种化学放大型抗蚀剂的带电粒子束写入方法，包括：在掩模基板的表面上涂覆含有酸扩散抑制剂的所述化学放大型抗蚀剂，将带电粒子束暴露于所述表面上的所述化学放大型抗蚀剂层 对所述带电粒子束进行曝光的所述化学放大型抗蚀剂层进行烘烤，烘烤后显影所述化学放大型抗蚀剂，其中所述电子束的曝光电流密度为50〜5000A / cm 2， 所述光酸产生剂的量相对于所述化学增幅型抗蚀剂的全部固体含量为0.1〜30重量％（重量％），所述酸扩散抑制剂由选自三级 胺类，氨基甲酸苄酯类，苯偶姻 - 氨基甲酸酯类，邻氨基甲酰基 - 羟基 - 胺类，邻氨基甲酰基肟 屁股和二硫代氨基甲酸铵 - 季铵盐。

公开(公告)号：US20080265174A1

公开(公告)日：2008-10-30

申请号：US12103321

申请日：2008-04-15

申请人： Makoto HIRAMOTO ,  Takashi Kamikubo ,  Shuichi Tamamushi

发明人： Makoto HIRAMOTO ,  Takashi Kamikubo ,  Shuichi Tamamushi

IPC分类号： H01J3/26

CPC分类号： H01J37/09 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/0209 ,  H01J2237/3045 ,  H01J2237/30461

摘要： A charged particle beam writing apparatus includes an unit configured to irradiate a beam, a deflector configured to deflect the beam, a stage, on which a target is placed, configured to perform moving continuously, an lens configured to focus the beam onto the target, an unit configured to calculate a correction amount for correcting positional displacement of the beam on a surface of the target resulting from a first magnetic field caused by the lens and a second magnetic field caused by an eddy current generated by the first magnetic field and the moving of the stage, an unit configured to calculate a correction position where the positional displacement on the surface of the target has been corrected using the correction amount, and an unit configured to control the deflector so that the beam may be deflected onto the correction position.

摘要翻译： 带电粒子束写入装置包括被配置为照射光束的单元，被配置为使光束偏转的偏转器，配置有目标的台阶，其被配置为连续地进行移动;配置成将光束聚焦到目标上的透镜， 被配置为计算校正量，用于校正由由透镜引起的第一磁场产生的目标表面上的光束的位置偏移和由由第一磁场和移动的所产生的涡流引起的第二磁场 所述单元被配置为使用所述校正量来计算已经校正了所述目标的表面上的位置偏移的校正位置，以及被配置为控制所述偏转器使得所述光束可能偏转到所述校正位置的单元。

公开(公告)号：US20070243487A1

公开(公告)日：2007-10-18

申请号：US11734587

申请日：2007-04-12

申请人： Hirohito Anze ,  Takehiko Katsumata ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Rieko Nishimura ,  Makoto Hiramoto ,  Tomoo Motosugi ,  Takayuki Ohnishi

发明人： Hirohito Anze ,  Takehiko Katsumata ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Rieko Nishimura ,  Makoto Hiramoto ,  Tomoo Motosugi ,  Takayuki Ohnishi

IPC分类号： G03C1/00

CPC分类号： G03F1/78

摘要： The present invention realized the excellent dimensional accuracy of resist patterns by using a chemical amplification type resist whose effective acid diffusion length is shorten without decreasing throughput of a charged particle beam writing system.The resist pattern forming method of the present invention features that the amount of the acid diffusion inhibitor in a chemical amplification type resist in order to shorten the effective acid diffusion length increases and the current density of a charged particle exposure in order to prevent the throughput drop of the writing system increases.The present invention provides a resist pattern forming method comprising a process of coating a chemical amplification type resist on the surface of a processing substrate, a process of exposing patterns by using charged particle beams on the surface of the said substrate, a process of post exposure baking the chemical amplification type resist after the exposure, and a process of developing the said chemical amplification type resist.The said method features that the amount of an acid diffusion inhibitor in the said resist increases and the current density of the charged particle exposure also increases.

摘要翻译： 本发明通过使用有效的酸扩散长度缩短而不降低带电粒子束写入系统的通过量的化学放大型抗蚀剂来实现抗蚀剂图案的优异的尺寸精度。 本发明的抗蚀剂图案形成方法的特征在于为了缩短有效酸扩散长度，化学放大型抗蚀剂中的酸扩散抑制剂的量增加，并且带电粒子暴露的电流密度为了防止生产量下降 的写作系统增加。 本发明提供一种抗蚀剂图案形成方法，其包括在处理基板的表面上涂布化学放大型抗蚀剂的方法，通过在所述基板的表面上使用带电粒子束来曝光图案的处理，后曝光 在曝光后烘烤化学放大型抗蚀剂，以及显影所述化学放大型抗蚀剂的工艺。 所述方法的特征在于所述抗蚀剂中的酸扩散抑制剂的量增加，并且带电粒子暴露的电流密度也增加。

公开(公告)号：US20070158576A1

公开(公告)日：2007-07-12

申请号：US11617165

申请日：2006-12-28

申请人： Takashi Kamikubo ,  Shuichi Tamamushi ,  Hitoshi Sunaoshi ,  Kenji Ohtoshi ,  Rieko Nishimura

发明人： Takashi Kamikubo ,  Shuichi Tamamushi ,  Hitoshi Sunaoshi ,  Kenji Ohtoshi ,  Rieko Nishimura

IPC分类号： G01K1/08

CPC分类号： G01K1/08 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31776

摘要： A method of calculating a deflection aberration correcting voltage includes writing predetermined patterns at a plurality of focus height positions measuring dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions, calculating effective resolutions of the written predetermined patterns by using the dimensional variations, and on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and output the correcting voltage, wherein the correcting voltage is used when a charged particle beam is deflected.

摘要翻译： 计算偏转像差校正电压的方法包括在测量在多个聚焦高度位置处写入的预定图案的宽度尺寸的尺寸变化的多个聚焦高度位置处书写预定图案，通过使用 并且基于获得预定图案的最小有效分辨率的焦点高度位置，计算校正电压以校正偏转像差并输出校正电压，其中当带电粒子束 被偏转。

公开(公告)号：US08183544B2

公开(公告)日：2012-05-22

申请号：US12408212

申请日：2009-03-20

申请人： Kaoru Tsuruta ,  Takashi Kamikubo ,  Rieko Nishimura ,  Shusuke Yoshitake ,  Shuichi Tamamushi

发明人： Kaoru Tsuruta ,  Takashi Kamikubo ,  Rieko Nishimura ,  Shusuke Yoshitake ,  Shuichi Tamamushi

IPC分类号： A61N5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/30444

摘要： A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.

摘要翻译： 用于带电粒子束光刻设备的校正衬底包括使用热膨胀低于氧化硅（SiO 2）材料的热膨胀材料的低热膨胀材料的衬底体; 布置在所述基板上方的第一导电膜; 以及选择性地布置在所述第一导电膜上并具有高于所述第一导电膜的反射率的第二导电膜，其中所述低热膨胀材料暴露在所述校正衬底的后表面上。

公开(公告)号：US07679068B2

公开(公告)日：2010-03-16

申请号：US11617165

申请日：2006-12-28

申请人： Takashi Kamikubo ,  Shuichi Tamamushi ,  Hitoshi Sunaoshi ,  Kenji Ohtoshi ,  Rieko Nishimura

发明人： Takashi Kamikubo ,  Shuichi Tamamushi ,  Hitoshi Sunaoshi ,  Kenji Ohtoshi ,  Rieko Nishimura

IPC分类号： G21K5/10 ,  G01D5/00

CPC分类号： G01K1/08 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31776

摘要： A method of obtaining a deflection aberration correcting voltage. The method includes writing predetermined patterns at a plurality of focus height positions such that a dose is used as a variable. Dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions such that the dose is used as the variable are measured. Further, effective resolutions of the written predetermined patterns are calculated by using the dimensional variations. The method further includes, on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and outputting the correcting voltage. The correcting voltage is used when a charged particle beam is deflected.

摘要翻译： 一种获得偏转像差校正电压的方法。 该方法包括在多个焦点高度位置处写入预定图案，使得剂量被用作变量。 测量在多个焦点高度位置处写入的预定图案的宽度尺寸的尺寸变化，使得剂量用作变量。 此外，通过使用尺寸变化来计算书写的预定图案的有效分辨率。 该方法还包括：基于获得预定图案的最小有效分辨率的焦点高度位置，计算校正电压以校正偏转像差并输出校正电压。 当带电粒子束偏转时使用校正电压。

公开(公告)号：US5894057A

公开(公告)日：1999-04-13

申请号：US887842

申请日：1997-07-03

申请人： Toshio Yamaguchi ,  Kazuto Matsuki ,  Shuichi Tamamushi ,  Souji Koikari ,  Eiji Murakami ,  Shigehiro Hara

发明人： Toshio Yamaguchi ,  Kazuto Matsuki ,  Shuichi Tamamushi ,  Souji Koikari ,  Eiji Murakami ,  Shigehiro Hara

IPC分类号： H01J37/305 ,  G03F7/20 ,  H01J37/302 ,  H01L21/027 ,  H01L21/302 ,  G03F9/00 ,  G03C5/00

CPC分类号： H01J37/3026 ,  G03F7/2065 ,  H01J2237/31764 ,  H01J2237/31767 ,  Y10S430/143

摘要： The present invention provides a charged beam drawing method comprising a first step of setting a stripe field independent of drawing pattern definition data and of determining the drawing pattern definition data which belongs to the stripe field set, a second step of setting a sub-field independent of the drawing pattern definition data and of determining the drawing pattern definition data which belongs to the sub-field, among the drawing pattern definition data determined, a third step of drawing the drawing pattern definition data which belongs to the sub-field onto an object to be subjected to drawing, a fourth step of shifting a position of the stripe field by a first predetermined value, and of shifting a position of the sub-field by a second predetermined value, and a fifth step of repeating the first to fourth steps for at least two times.

摘要翻译： 本发明提供了一种带电波束绘制方法，包括：第一步骤，设置与绘制图案定义数据无关的条带字段，并确定属于条带字段集的绘图模式定义数据;第二步，设置子场独立 并且在确定的绘图模式定义数据中确定属于该子场的绘图模式定义数据，以及将属于子场的绘图模式定义数据绘制到一个对象上的第三步骤 要进行绘制的第四步骤，将条纹域的位置移动第一预定值，并且将子场的位置移位第二预定值，第五步骤，重复第一至第四步骤 至少两次。