公开(公告)号：US07893458B2

公开(公告)日：2011-02-22

申请号：US11892819

申请日：2007-08-28

申请人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H01L29/74 ,  H01L29/76

CPC分类号： H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/42356 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7817 ,  H01L29/7821

摘要： A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.

摘要翻译： 半导体器件包括：半导体衬底; 设置在基板中的横向MOS晶体管; 设置在基板中的齐纳二极管; 以及设置在基板中的电容器。 晶体管包括漏极和栅极，并且二极管和电容器串联耦合在漏极和栅极之间。 该设备具有最小的尺寸和高切换速度。 此外，改善了开关损耗和浪涌电压两者。

公开(公告)号：US20080054325A1

公开(公告)日：2008-03-06

申请号：US11892819

申请日：2007-08-28

申请人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H01L27/06

CPC分类号： H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/42356 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7817 ,  H01L29/7821

摘要： A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.

摘要翻译： 半导体器件包括：半导体衬底; 设置在基板中的横向MOS晶体管; 设置在基板中的齐纳二极管; 以及设置在基板中的电容器。 晶体管包括漏极和栅极，并且二极管和电容器串联耦合在漏极和栅极之间。 该设备具有最小的尺寸和高切换速度。 此外，改善了开关损耗和浪涌电压两者。

公开(公告)号：US08519748B2

公开(公告)日：2013-08-27

申请号：US13433624

申请日：2012-03-29

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US08179169B2

公开(公告)日：2012-05-15

申请号：US13105021

申请日：2011-05-11

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US20100102857A1

公开(公告)日：2010-04-29

申请号：US12654323

申请日：2009-12-17

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00 ,  H03K17/56

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 第一电极和第二电极之间的连接能够通过切换晶体管的控制电压来暂时地在状态和非导通状态之间切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US07671636B2

公开(公告)日：2010-03-02

申请号：US11723967

申请日：2007-03-22

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

公开(公告)号：US20080012610A1

公开(公告)日：2008-01-17

申请号：US11723967

申请日：2007-03-22

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00 ,  H03K17/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 第一电极和第二电极之间的连接能够通过切换晶体管的控制电压来暂时地在状态和非导通状态之间切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US20120182051A1

公开(公告)日：2012-07-19

申请号：US13433624

申请日：2012-03-29

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US20110210766A1

公开(公告)日：2011-09-01

申请号：US13105021

申请日：2011-05-11

申请人： Takaaki AOKI ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki AOKI ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03B1/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US20070238271A1

公开(公告)日：2007-10-11

申请号：US11806862

申请日：2007-06-05

申请人： Shoichi Yamauchi ,  Yoshiyuki Hattori ,  Kyoko Okada

发明人： Shoichi Yamauchi ,  Yoshiyuki Hattori ,  Kyoko Okada

IPC分类号： H01L21/20

CPC分类号： H01L29/7811 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/66734 ,  H01L29/7813

摘要： A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type impurities whose concentration is lower than the first portion region constituting the combination of the cell region are formed in the semiconductor layer of the peripheral region. A field oxide layer is formed on a surface of the semiconductor upper layer.

摘要翻译： 具有SJ结构的半导体器件具有比电池区域的耐电压更高的耐受电压的周边区域。 在周边区域的半导体层中形成有包含第二导电型杂质的半导体上层和包含第一导电型杂质的半导体下层，该第一导电型杂质的浓度低于构成该单元区域组合的第一部分区域。 在半导体上层的表面上形成场氧化物层。