公开(公告)号：US4497543A

公开(公告)日：1985-02-05

申请号：US269211

申请日：1981-06-02

申请人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai ,  Hideo Morita

发明人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai ,  Hideo Morita

IPC分类号： G02F1/133 ,  G02F1/1335 ,  G02F1/137 ,  G02F1/139

CPC分类号： G02F1/13725 ,  G02F1/133533

摘要： A liquid crystal display element which is composed of a TN liquid crystal cell containing nematic liquid crystal of positive dielectric anisotropy and an N type dye having the same long molecular axes as the liquid crystal and polarizing plates respectively disposed opposite both side plates of the liquid crystal cell. The polarizing plates each have the direction of polarization substantially parallel to the orientation of molecules of the liquid crystal near the side plate of the liquid crystal which each polarizing plate confronts, and one of the polarizing plates is a color polarizing plate.

摘要翻译： 一种液晶显示元件，其由含有正介电各向异性的向列型液晶的TN液晶单元和与液晶相同的长分子轴的N型染料和分别设置在液晶两侧的偏振板 细胞。 偏光板各自具有基本上平行于每个偏振片所面对的液晶的侧板附近的液晶分子的取向的偏振方向，偏振片中的一个为彩色偏振片。

公开(公告)号：US4723838A

公开(公告)日：1988-02-09

申请号：US804556

申请日：1985-12-04

申请人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai

发明人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai

IPC分类号： G09G3/36 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/35 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  G02F1/13 ,  H01L27/14

CPC分类号： H01L29/78666 ,  G02F1/1368 ,  H01L29/42384 ,  H01L29/78633

摘要： An active matrix liquid crystal display device has a plurality of display electrodes arranged in a matrix array and selectable through control of thin film transistors for application of voltage between selected display electrodes and a common electrode to obtain image display. Each thin film transistor has a semiconductive layer and a gate insulating film both formed to have the same pattern. Each thin film transistor has a gate electrode formed on the gate insulating film with the edges of the gate electrode inwardly spaced apart from the corresponding edges of the gate insulating film. The semiconductor layer and gate insulating film have extensions extending under a corresponding gate bus.

摘要翻译： 有源矩阵液晶显示装置具有以矩阵形式布置的多个显示电极，并且可通过控制薄膜晶体管来选择，以在选定的显示电极和公共电极之间施加电压以获得图像显示。 每个薄膜晶体管都具有形成为具有相同图案的半导体层和栅极绝缘膜。 每个薄膜晶体管具有形成在栅极绝缘膜上的栅电极，栅电极的边缘与栅极绝缘膜的相应边缘向内间隔开。 半导体层和栅极绝缘膜具有在相应的栅极总线下延伸的延伸。

公开(公告)号：US4770498A

公开(公告)日：1988-09-13

申请号：US908981

申请日：1986-09-18

申请人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai

发明人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai

IPC分类号： G02F1/1335 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/13 ,  H01L29/78

CPC分类号： G02F1/133514 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/13454

摘要： A liquid crystal cell comprises a liquid crystal sealed between a pair of confronting transparent substrates. A multiplicity of semiconductor driver elements are substantially uniformly distributed over an inner surface of one of the substrates. The semiconductor driver elements have output electrodes connected respectively to matrix element electrodes formed on the inner surface of said one of the substrates. A driver circuit is formed as a semiconductor integrated circuit on an extension of the inner surface of said one of the substrates for selectively driving the semiconductor driver elements.

摘要翻译： 液晶单元包括密封在一对面对的透明基板之间的液晶。 多个半导体驱动元件基本均匀地分布在一个基板的内表面上。 半导体驱动器元件具有分别连接到形成在所述一个基板的内表面上的矩阵元件电极的输出电极。 在所述一个基板的内表面的延伸部上形成驱动电路作为半导体集成电路，用于选择性地驱动半导体驱动元件。

公开(公告)号：US4644338A

公开(公告)日：1987-02-17

申请号：US510481

申请日：1983-07-01

申请人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai

发明人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai

IPC分类号： G09G3/36 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30

CPC分类号： G02F1/1362 ,  G02F1/133514 ,  G02F1/1368 ,  G02F1/13454 ,  Y10S438/949

摘要： A liquid crystal cell comprises a liquid crystal sealed between a pair of confronting transparent substrates. A multiplicity of semiconductor driver elements are substantially uniformly distributed over an inner surface of one of the substrates. The semiconductor driver elements have output electrodes connected respectively to matrix element electrodes formed on the inner surface of said one of the substrates. A driver circuit is formed as a semiconductor integrated circuit on an extension of the inner surface of said one of the substrates for selectively driving the semiconductor driver elements.

公开(公告)号：US4654117A

公开(公告)日：1987-03-31

申请号：US839673

申请日：1986-03-14

申请人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai

发明人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai

IPC分类号： G09G3/36 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC分类号： G02F1/1362 ,  G02F1/133514 ,  G02F1/1368 ,  G02F1/13454 ,  Y10S438/949

摘要： An array of thin film transistors is fabricated by forming a plurality of spaced closely adjacent metallic source and drain electrodes on an array area of a transparent substrate, forming semiconductor layers on the substrate between each adjacent pair of source and drain electrodes in overlapping relation to the edges of each such pair, covering the semiconductor layers with a gate insulation film that extends over substantially all of said array area, forming a transparent gate electrode layer over the gate insulation film, covering the transparent gate electrode layer with a photosensitive resin layer which is then exposed to light through the transparent substrate and transparent gate electrode layer with the metallic source and drain electrodes acting as masks, developing the photosensitive resin layer to remove portions thereof other than the exposed portions, and etching the transparent gate electrode with the remaining portions of the resin layer serving as masks thereby to form the gate electrodes of the thin film transistors in the array.

摘要翻译： 通过在透明衬底的阵列区域上形成多个间隔紧密的金属源极和漏电极来制造薄膜晶体管阵列，在每个相邻的一对源电极和漏电极之间的衬底上形成半导体层，以与 每个这样的对的边缘覆盖半导体层，栅极绝缘膜在基本上所有的阵列区域上延伸，在栅极绝缘膜上形成透明栅电极层，用感光树脂层覆盖透明栅电极层，该感光树脂层是 然后通过透明基板和透明栅极电极层暴露于金属源极和漏极用作掩模，将感光性树脂层除去除了暴露部分之外的部分，并且将其余部分蚀刻到透明栅电极 树脂层用作掩模 m阵列中的薄膜晶体管的栅电极。

公开(公告)号：US4740782A

公开(公告)日：1988-04-26

申请号：US903332

申请日：1986-09-03

申请人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai

发明人： Shigeo Aoki ,  Junichi Tamamura ,  Yasuhiro Ukai

IPC分类号： G09G3/36 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30

CPC分类号： G02F1/1362 ,  G02F1/133514 ,  G02F1/1368 ,  G02F1/13454 ,  Y10S438/949

摘要： A liquid crystal cell comprises a liquid crystal sealed between a pair of confronting transparent substrates. A multiplicity of semiconductor driver elements are substantially uniformly distributed over an inner surface of one of the substrates. The semiconductor driver elements have output electrodes connected respectively to matrix element electrodes formed on the inner surface of said one of the substrates. A driver circuit is formed as a semiconductor integrated circuit on an extension of the inner surface of said one of the substrates for selectively driving the semiconductor driver elements.The driver circuit comprises a plurality of thin-film transistors each of which includes a semiconductor layer which has enhanced carrier mobility achieved through annealing.

摘要翻译： 液晶单元包括密封在一对面对的透明基板之间的液晶。 多个半导体驱动元件基本均匀地分布在一个基板的内表面上。 半导体驱动器元件具有分别连接到形成在所述一个基板的内表面上的矩阵元件电极的输出电极。 在所述一个基板的内表面的延伸部上形成驱动电路作为半导体集成电路，用于选择性地驱动半导体驱动元件。 驱动器电路包括多个薄膜晶体管，每个薄膜晶体管包括具有通过退火实现的增强的载流子迁移率的半导体层。

公开(公告)号：US4849797A

公开(公告)日：1989-07-18

申请号：US145949

申请日：1988-01-20

申请人： Yasuhiro Ukai ,  Shigeo Aoki

发明人： Yasuhiro Ukai ,  Shigeo Aoki

IPC分类号： G02F1/1368 ,  H01L29/15 ,  H01L29/16 ,  H01L29/43 ,  H01L29/778 ,  H01L29/786 ,  H01L31/0376

CPC分类号： G02F1/1368 ,  H01L29/154 ,  H01L29/1604 ,  H01L29/432 ,  H01L29/7782 ,  H01L29/78684 ,  H01L29/78687 ,  H01L31/03765 ,  Y02E10/548

摘要： In a thin film transistor which has an active layer formed between source and drain electrodes, a gate insulating film formed in contact with the active layer, and a gate electrode formed in contact with the gate insulating film, the photoconductivity of the active layer is reduced by forming the active layer of amorphous silicon carbide (a-Si.sub.1-x C.sub.x) whose carbon content x is greater than 0.1.

公开(公告)号：US4776673A

公开(公告)日：1988-10-11

申请号：US911694

申请日：1986-09-26

申请人： Shigeo Aoki ,  Yasuhiro Ukai ,  Yasuhiro Matsushita

发明人： Shigeo Aoki ,  Yasuhiro Ukai ,  Yasuhiro Matsushita

IPC分类号： H01L29/78 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  G02F1/13

CPC分类号： H01L27/12 ,  G02F1/1362 ,  G02F1/1368

摘要： A liquid-crystal cell is formed with first and second transparent substrates opposing each other and a liquid crystal sealed therebetween. A plurality of display electrodes are formed in a matrix arrangement with rows and columns on the inner surface of said first transparent substrate. Gate bus lines are formed on the first transparent substrate along the respective rows of display electrodes. Source bus lines are formed on the first transparent substrate along the respective columns of display electrodes. Thin-film transistors are formed on the first transparent substrate at the intersections of the gate and source bus lines. The thin-film transistors each have a gate electrode connected to the associated gate bus line, a source electrode connected to the associated source bus line and the drain electrode connected to a corresponding display electrode. A common electrode is formed on the second transparent substrate such that it faces the display electrodes. The opposed sides of the source and drain electrodes of each thin-film transistor are constituted by tapered surfaces with the distance therebetween being progressively decreased as they approach the first transparent substrate. Ohmic contact layers are formed on these tapered surfaces. A semiconductor of each thin-film transistor is formed over the source and drain electrodes via the ohmic contact layers.

公开(公告)号：US4760389A

公开(公告)日：1988-07-26

申请号：US932839

申请日：1986-11-20

申请人： Shigeo Aoki ,  Yasuhiro Ukai ,  Masaru Yasui

发明人： Shigeo Aoki ,  Yasuhiro Ukai ,  Masaru Yasui

IPC分类号： G09F9/00 ,  G02F1/133 ,  G02F1/13357 ,  G09F9/35 ,  G03B21/14 ,  G02B27/00 ,  G02F1/135 ,  G09G3/36

CPC分类号： G02F1/133604 ,  G02F1/13318 ,  G09G3/3406 ,  G02F2201/58 ,  G09G2320/0633 ,  G09G2360/144

摘要： A transmitting type display device is disclosed, which comprises a transmitting type display panel to provide a display on the front surface, a light source for producing light illuminating the back surface of the transmitting type display and a brightness controller for controlling the intensity of light from the light source. The device comprises an ambient light detector disposed near the transmitting type display panel for detecting the intensity of ambient light incident on the display surface of the transmitting type display panel, and the brightness controller for controlling the light source according to the detection output of the ambient light detector such that the intensity of light from the light source to the transmitting type display panel is increased with an increase of the detected light intensity.

摘要翻译： 公开了一种发送型显示装置，其包括用于在前表面提供显示的发送型显示面板，用于产生照射发送型显示器的背面的光的光源和用于控制发光强度的亮度控制器 光源。 该装置包括设置在发送型显示面板附近的环境光检测器，用于检测入射在发送型显示面板的显示表面上的环境光的强度，以及根据环境的检测输出来控制光源的亮度控制器 光检测器，使得来自光源到发射型显示面板的光的强度随着检测到的光强度的增加而增加。

公开(公告)号：US5162933A

公开(公告)日：1992-11-10

申请号：US697991

申请日：1991-05-10

申请人： Nobuhiko Kakuda ,  Tsutomu Wada ,  Kinya Kato ,  Tadamichi Kawada ,  Masamichi Okamura ,  Shigeo Aoki ,  Yasuhiro Ukai ,  Kiyoshi Taruta ,  Tomihisa Sunata ,  Hiroshi Saito ,  Takanobu Nakagawa

发明人： Nobuhiko Kakuda ,  Tsutomu Wada ,  Kinya Kato ,  Tadamichi Kawada ,  Masamichi Okamura ,  Shigeo Aoki ,  Yasuhiro Ukai ,  Kiyoshi Taruta ,  Tomihisa Sunata ,  Hiroshi Saito ,  Takanobu Nakagawa

IPC分类号： G02F1/1345 ,  G02F1/1362 ,  H01L27/13

CPC分类号： H01L27/13 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1345 ,  G02F1/136209 ,  G02F2001/13629

摘要： In an active matrix structure for liquid crystal display elements which includes pixel electrodes arranged in a matrix form on a glass base plate, thin film transistors having their drains connected to the pixel electrodes, respectively, data lines each connected to sources of the thin film transistors of one column and gate lines connected to gates of the thin film transistors of one row, there are provided in the same plane a light blocking layer disposed opposite each of the thin film transistors across an insulating layer, a storage capacitance electrode disposed partly opposite each of the pixel electrodes across the insulating layer and storage capacitance lines for interconnecting the capacitance electrodes. The light blocking layers, the storage capacitance electrodes and the storage capacitance lines are formed of the same material and at the same time.