公开(公告)号：US5741360A

公开(公告)日：1998-04-21

申请号：US514229

申请日：1995-08-11

申请人： Shigeo Goto ,  Yasuhiko Nomura ,  Yoshitaka Morishita ,  Seikoh Yoshida ,  Masahiro Sasaki

发明人： Shigeo Goto ,  Yasuhiko Nomura ,  Yoshitaka Morishita ,  Seikoh Yoshida ,  Masahiro Sasaki

IPC分类号： C30B25/02 ,  H01L21/20 ,  C30B23/04

CPC分类号： H01L21/02463 ,  C30B25/02 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  Y10S117/913

摘要： In a method of selectively growing a crystal of a compound semiconductor layer which is composed of gallium and arsenic, a selective growth is selectively carried out on a substrate by using a combination of metallic gallium and a reactive gas, such as trisdimethylminoarsine, which includes a metallic compound of arsenic specified by at least one amine. The combination may includes organometallic gallium, such as trimethylgallium, triethylgallium instead of the metallic gallium. Such a combination serves to selectively deposit the compound semiconductor layer only on an exposed portion uncovered with a mask. Any other compound semiconductor layer may be selectively deposited on the exposed portion. The exposed portion may be composed of GaAs, AlGaAs, or InGaAs.

摘要翻译： 在选择性地生长由镓和砷构成的化合物半导体层的晶体的方法中，通过使用金属镓和反应性气体如三甲基氨基胂的组合，在衬底上选择性地进行选择性生长，所述反应性气体包括 由至少一种胺指定的金属砷化合物。 该组合可以包括有机金属镓，例如三甲基镓，三乙基镓，而不是金属镓。 这种组合用于仅将化合物半导体层选择性地沉积在未被掩模覆盖的暴露部分上。 任何其它化合物半导体层可以选择性地沉积在暴露部分上。 暴露部分可以由GaAs，AlGaAs或InGaAs组成。

公开(公告)号：US5656540A

公开(公告)日：1997-08-12

申请号：US411464

申请日：1995-03-28

申请人： Yasuhiko Nomura ,  Shigeo Goto ,  Yoshitaka Morishita

发明人： Yasuhiko Nomura ,  Shigeo Goto ,  Yoshitaka Morishita

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/203 ,  H01L29/06

CPC分类号： H01L21/02395 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S438/925

摘要： On a surface of a p-type GaAs (111)B substrate 11, a mesa groove is formed along a [211]A direction. TDMAAs as a group V material and TMGa as a group III material are supplied at 8.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow n-type GaAs 13 dominantly on a side surface of a mesa 12. Subsequently, the group V material is changed to metal As. As.sub.4 and MAGa are supplied at 5.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow p-type GaAs 14 only on a side surface of the GaAs 13. Then, the group V material is again changed to TDMAAs. TDMAAs and TMGa are supplied both at 8.times.10.sup.-4 Pa to grow p-type GaAs 15.

摘要翻译： 在p型GaAs（111）B基板11的表面上沿[2 + E，ovs 11 + EE] A方向形成台面槽。 以8×10 -3 Pa和8×10 -4 Pa分别提供作为V族材料的TDMAAs和作为III族材料的TMGa，以主要在台面12的侧表面上生长n型GaAs 13。 材质改为金属As。 As4和MAGa分别以5×10 -3 Pa和8×10 -4 Pa供应，以仅在GaAs 13的侧表面上生长p型GaAs 14。然后，组V材料再次改变为TDMAA。 在8×10 -4 Pa下提供TDMAAs和TMGa以生长p型GaAs 15。