公开(公告)号：US06890783B2

公开(公告)日：2005-05-10

申请号：US10242011

申请日：2002-09-12

申请人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

发明人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/84 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786 ,  H01L31/036

CPC分类号： G02F1/134363

摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

摘要翻译： 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤1中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤2中，层叠由非晶硅层和n + +非晶硅层构成的栅绝缘层和半导体层，以提供TFT部分的半导体层。 在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极， 通过蚀刻除去沟道间隙的+非晶硅层。 在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。

公开(公告)号：US06632696B2

公开(公告)日：2003-10-14

申请号：US09745657

申请日：2000-12-20

申请人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

发明人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC分类号： H01L2100

CPC分类号： G02F1/134363

摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

摘要翻译： 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤 1 中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤 2 中，将由非晶硅层和n 非晶硅层组成的栅极绝缘层和半导体层层压到 提供TFT部分的半导体层。 在步骤 3 中，层叠透明导电层和金属层，信号线，从信号线延伸的漏电极，像素电极和源电极延伸 形成像素电极，并且通过蚀刻去除通道间隙的n 非晶硅层。 在步骤 4 中，形成保护绝缘层，通过蚀刻去除保护绝缘层和像素电极上方的金属层。

公开(公告)号：US06788355B1

公开(公告)日：2004-09-07

申请号：US09695212

申请日：2000-10-25

申请人： Satoshi Ihida ,  Hirotaka Yamaguchi ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Hiroshi Kanou ,  Wakahiko Kaneko ,  Tae Miyahara ,  Michiaki Sakamoto ,  Shinichi Nakata

发明人： Satoshi Ihida ,  Hirotaka Yamaguchi ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Hiroshi Kanou ,  Wakahiko Kaneko ,  Tae Miyahara ,  Michiaki Sakamoto ,  Shinichi Nakata

IPC分类号： G02F11343

CPC分类号： G02F1/13458 ,  G02F1/1362 ,  G02F1/1368 ,  G02F2001/136231

摘要： A method for fabricating an active matrix LCD panel for use in an active matrix LCD device includes the step of forming a passivation layer acting as a channel protection layer for protecting an amorphous silicon active layer, thereby reducing the number of photolithographic steps. A transparent conductive film is used for forming a gate electrode and a pixel electrode before formation of an amorphous silicon film for the TFTs.

摘要翻译： 制造用于有源矩阵LCD器件的有源矩阵LCD面板的方法包括形成用作保护非晶硅有源层的沟道保护层的钝化层的步骤，从而减少光刻步骤的数量。 在形成用于TFT的非晶硅膜之前，使用透明导电膜来形成栅电极和像素电极。

公开(公告)号：US06891196B2

公开(公告)日：2005-05-10

申请号：US10617035

申请日：2003-07-11

申请人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

发明人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

IPC分类号： G02F1/1345 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/12 ,  G02F1/134363 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288

摘要： An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode is isolated in each layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer and a TFF area. A drain electrode layer is formed by a first passivation film with the first passivation film formed as an upper layer. In a second passivation film, formed above the first passivation film, are bored a first opening through the first and second passivation films and a second opening through the second passivation film. A wiring connection layer is formed by ITO provided as an uppermost layer. A storage capacitance unit, including the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is connected to the pixel electrode.

摘要翻译： 通过绝缘膜在每一层隔离具有栅电极，漏电极和像素电极的沟道保护型有源矩阵基板。 有源矩阵基板由四个掩模制成。 栅极电极层，栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层和TFF区域。 漏极电极层由第一钝化膜形成，第一钝化膜形成为上层。 在形成在第一钝化膜之上的第二钝化膜中，穿过第一和第二钝化膜的第一开口和通过第二钝化膜的第二开口。 由设置为最上层的ITO形成布线连接层。 夹持在栅电极和相对于栅电极形成为共层的电极层之间的第一和第二钝化膜的存储电容单元连接到像素电极。

公开(公告)号：US06674093B1

公开(公告)日：2004-01-06

申请号：US09695321

申请日：2000-10-25

申请人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

发明人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

IPC分类号： H01L29786

CPC分类号： H01L27/12 ,  G02F1/134363 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288

摘要： An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer (102 of FIG. 6) and a TFF area. A drain electrode layer (106 of FIG. 6) is formed by a first passivation film (105 of FIG. 6) via a first passivation film (105 of FIG. 6) formed as an upper layer. In a second passivation film (107 of FIG. 6) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO (108 of FIG. 6) provided as an uppermost layer. A storage capacitance unit, comprised of the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is provided in the pixel electrode.

摘要翻译： 沟道保护型有源矩阵基板，具有通过绝缘膜从一层到另一层隔离的栅电极，漏电极和像素电极。 有源矩阵基板由四个掩模制成。 栅极电极层，栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层（图6的102）和TFF区域。 经由形成为上层的第一钝化膜（图6的105）由第一钝化膜（图6的105）形成漏极电极层（图6的106）。 在其上形成的第二钝化膜（图6的107）中，其穿过第一和第二钝化膜的开口以及通过第二钝化膜的开口。 布线连接层由作为最上层设置的ITO（图6的108）形成。 在像素电极中设置存储电容单元，该第一钝化膜和第二钝化膜夹在栅电极和形成为相对于栅电极的共层的电极层之间。

公开(公告)号：US06917392B2

公开(公告)日：2005-07-12

申请号：US09738530

申请日：2000-12-15

申请人： Takahisa Hannuki ,  Shinichi Nishida ,  Satoshi Ihida ,  Shouichi Kuroha ,  Ryuji Takahashi ,  Satoshi Miura

发明人： Takahisa Hannuki ,  Shinichi Nishida ,  Satoshi Ihida ,  Shouichi Kuroha ,  Ryuji Takahashi ,  Satoshi Miura

IPC分类号： G02F1/137 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G02F1/139 ,  H01L21/336 ,  H01L29/786 ,  G01F1/136

CPC分类号： G02F1/134363

摘要： The present invention provides a liquid crystal display apparatus of a lateral direction electric field drive type comprising an array substrate including a plurality of TFTs each having a gate electrode, a gate insulation film, a semiconductor layer, and a source electrode/drain electrode formed on a transparent substrate and an opposing substrate arrange so as to oppose to the array substrate, wherein the semiconductor layer has a width in the gate length direction identical to the gate length.

摘要翻译： 本发明提供一种横向电场驱动型的液晶显示装置，其包括阵列基板，该阵列基板包括多个TFT，每个TFT具有栅电极，栅极绝缘膜，半导体层和源电极/漏极，形成于 透明基板和相对的基板布置成与阵列基板相对，其中半导体层具有与栅极长度相同的栅极长度方向的宽度。

公开(公告)号：US07817229B2

公开(公告)日：2010-10-19

申请号：US11009029

申请日：2004-12-13

申请人： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kazurou Saeki

发明人： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kazurou Saeki

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133504 ,  G02F1/136227 ,  G02F2001/136236

摘要： In a transflective type LCD provided with a transparent region and a reflection region in each pixel, when an irregular film 11 is formed on an active matrix substrate 12 to form irregularities of a reflection electrode film 6, the irregular film 11 is specifically formed to almost the same film thickness in both the transparent region and the reflection region to provide substantially the same inter-substrate gap in these two regions so that they may have almost the same V-T characteristics and also the reflection electrode film 6 made of Al/Mo is formed so as to overlap with a transmission electrode film 5 made of ITO all around an outer periphery of the transmission electrode film 5 by a width of at least 2 μm, thus suppressing electric erosion from occurring between the ITO and Al substances at the edge of the transmission electrode film 5.

摘要翻译： 在每个像素中设置有透明区域和反射区域的半透射型LCD中，当在有源矩阵基板12上形成不规则膜11以形成反射电极膜6的凹凸时，不规则膜11特别形成为几乎 在透明区域和反射区域中具有相同的膜厚度，以在这两个区域中提供基本上相同的基板间间隙，使得它们可以具有几乎相同的VT特性，并且还形成由Al / Mo制成的反射电极膜6 以便与透明电极膜5的外周附近的由ITO制成的透射电极膜5重叠至少2μm的宽度，从而抑制ITO和Al物质边缘处的电侵蚀 透射电极膜5。

公开(公告)号：US20050094067A1

公开(公告)日：2005-05-05

申请号：US11009029

申请日：2004-12-13

申请人： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kazurou Saeki

发明人： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kazurou Saeki

IPC分类号： G02B5/08 ,  G02B5/30 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/133555 ,  G02F1/133504 ,  G02F1/136227 ,  G02F2001/136236

摘要： In a transflective type LCD provided with a transparent region and a reflection region in each pixel, when an irregular film 11 is formed on an active matrix substrate 12 to form irregularities of a reflection electrode film 6, the irregular film 11 is specifically formed to almost the same film thickness in both the transparent region and the reflection region to provide substantially the same inter-substrate gap in these two regions so that they may have almost the same V-T characteristics and also the reflection electrode film 6 made of Al/Mo is formed so as to overlap with a transmission electrode film 5 made of ITO all around an outer periphery of the transmission electrode film 5 by a width of at least 2 μm, thus suppressing electric erosion from occurring between the ITO and Al substances at the edge of the transmission electrode film 5.

摘要翻译： 在每个像素中设置有透明区域和反射区域的半透射型LCD中，当在有源矩阵基板12上形成不规则膜11以形成反射电极膜6的凹凸时，不规则膜11特别形成为几乎 在透明区域和反射区域中具有相同的膜厚度，以在这两个区域中提供基本上相同的基板间间隙，使得它们可以具有几乎相同的VT特性，并且还形成由Al / Mo制成的反射电极膜6 以便与透明电极膜5的外周附近的由ITO制成的透射电极膜5重叠至少2μm的宽度，从而抑制在ITO的边缘处的ITO和Al物质之间的电侵蚀 透射电极膜5。

公开(公告)号：US06853421B2

公开(公告)日：2005-02-08

申请号：US10205365

申请日：2002-07-26

申请人： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kazurou Saeki

发明人： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kazurou Saeki

IPC分类号： G02B5/08 ,  G02B5/30 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/133555 ,  G02F1/133504 ,  G02F1/136227 ,  G02F2001/136236

摘要： In a transflective type LCD provided with a transparent region and a reflection region in each pixel, when an irregular film 11 is formed on an active matrix substrate 12 to form irregularities of a reflection electrode film 6, the irregular film 11 is specifically formed to almost the same film thickness in both the transparent region and the reflection region to provide substantially the same inter-substrate gap in these two regions so that they may have almost the same V-T characteristics and also the reflection electrode film 6 made of Al/Mo is formed so as to overlap with a transmission electrode film 5 made of ITO all around an outer periphery of the transmission electrode film 5 by a width of at least 2 μm, thus suppressing electric erosion from occurring between the ITO and Al substances at the edge of the transmission electrode film 5.

公开(公告)号：US07990501B2

公开(公告)日：2011-08-02

申请号：US12905793

申请日：2010-10-15

申请人： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kazurou Saeki

发明人： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kazurou Saeki

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133504 ,  G02F1/136227 ,  G02F2001/136236

摘要： A method for manufacturing a transflective type LCD having a first substrate provided thereon with a plurality of scanning lines and a plurality of signal lines which are substantially perpendicular to each other and a switching element arranged near each of intersections between said scanning lines and said signal lines, includes forming a reflection region having a reflection electrode film and a transmission region having a transparent electrode film in each pixel surrounded by said scanning lines and said signal lines, a liquid crystal being sandwiched at a gap between said first substrate and a second substrate which is arranged opposite to said first substrate, and forming an organic film having irregularities thereon below said reflection electrode film and said transparent electrode film to substantially the same film thickness.

摘要翻译： 一种半透射型LCD的制造方法，其具有设置有多个扫描线的多个第一基板和与其基本垂直的多个信号线，以及布置在所述扫描线与所述信号线之间的各交叉点附近的开关元件 包括形成具有反射电极膜的反射区域和在由所述扫描线和所述信号线包围的每个像素中具有透明电极膜的透射区域，液晶夹在所述第一基板和第二基板之间的间隙处， 与所述第一基板相对设置，并且在所述反射电极膜和所述透明电极膜的下方形成具有基本相同膜厚度的凹凸的有机膜。