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公开(公告)号：US5760457A
公开(公告)日：1998-06-02
申请号：US806396
申请日：1997-02-26
IPC分类号： H01L21/331 , H01L21/8222 , H01L27/06 , H01L29/08 , H01L29/205 , H01L29/73 , H01L29/737 , H01L29/00 , H01L31/0328
CPC分类号： H01L29/0817 , H01L27/0658 , H01L29/7304 , H01L29/7371
摘要： A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed from parts of the collector, base, and emitter layers and including a base electrode electrically connected to the base layer and a base electrode pad for making an external connection to the base layer; a base ballasting resistor formed from a part of the base layer isolated from the bipolar transistor and electrically connecting the base electrode to the base electrode pad; and a base parallel capacitor connected in parallel with the base ballasting resistor wherein the base parallel capacitor includes part of the base input pad, a dielectric film disposed on part of the base electrode pad, and a second electrode disposed on the dielectric layer opposite the base electrode pad and electrically connected to the emitter electrode of the bipolar transistor. The base ballasting resistor has a high resistance relative to an emitter ballasting reactor so that it can be easily mass produced with good uniformity and yield.
摘要翻译： 双极晶体管电路元件包括半导体衬底; 依次设置在基板上，基底层，发射极层和集电极层; 由集电极，基极和发射极层的部分形成的双极性晶体管，并且包括电连接到基极层的基极和用于与基极层进行外部连接的基极焊盘; 由与所述双极型晶体管隔离的所述基极层的一部分形成的基极保护电阻器，并且将所述基极电极与所述基极电极焊盘电连接; 以及与所述基极镇流电阻并联连接的基极并联电容器，其中所述基极并联电容器包括所述基极输入焊盘的一部分，设置在所述基极电极焊盘的一部分上的电介质膜，以及设置在与所述基极相对的所述电介质层上的第二电极 电极焊盘并电连接到双极晶体管的发射极。 碱性镇流电阻器相对于发射极压载反应器具有高电阻，使得其可以容易地以均匀性和产率良好地批量生产。
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公开(公告)号：US4215358A
公开(公告)日：1980-07-29
申请号：US846492
申请日：1977-10-27
IPC分类号： H01L29/73 , H01L21/314 , H01L21/331 , H01L29/06 , H01L29/861
CPC分类号： H01L29/8613 , H01L29/0638 , H01L29/0661
摘要： A P type semiconductor layer is epitaxially grown on an N.sup.+ type semiconductor substrate to form a PN junction between them so as to expose its circumference to the peripheral surface of the substrate. The P type layer is formed into a mesa having a tilted surface to which the circumference of the PN junction is exposed. Then an N.sup.+ type diffusion layer is disposed on the tilted mesa surface to protect the PN junction.
摘要翻译： 在N +型半导体衬底上外延生长P型半导体层，以在它们之间形成PN结，以将其周边暴露于衬底的外围表面。 P型层形成为具有露出PN结的周边的倾斜面的台面。 然后将N +型扩散层设置在倾斜台面上以保护PN结。
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公开(公告)号：US4212019A
公开(公告)日：1980-07-08
申请号：US920639
申请日：1978-06-29
IPC分类号： H01L29/864 , H01L31/107 , H01L29/90 , H01L29/161
CPC分类号： H01L31/1075
摘要： An avalanche photodiode comprises a photo-electric conversion region made of a semiconductor having an energy band gap smaller than the photon energy and a carrier multiplying region made of a semiconductor that differs from the semiconductor of the photo-electric conversion region. The different semiconductors for imparting superior functions to the regions are used to improve the quantum efficiency in the photo-electric conversion region and to decrease noise in the carrier multiplying region.
摘要翻译： 雪崩光电二极管包括由能量带隙小于光子能量的半导体制成的光电转换区域和由与光电转换区域的半导体不同的半导体制成的载流子倍增区域。 用于赋予该区域优异功能的不同半导体用于提高光电转换区域中的量子效率并降低载波倍增区域中的噪声。
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公开(公告)号：US3980508A
公开(公告)日：1976-09-14
申请号：US510912
申请日：1974-10-01
申请人： Saburo Takamiya , Masaharu Hama , Akihiro Kondo
发明人： Saburo Takamiya , Masaharu Hama , Akihiro Kondo
IPC分类号： H01L21/329 , H01L21/225 , H01L21/306 , H01L21/308 , H01L29/06
CPC分类号： H01L21/308 , H01L21/2255 , H01L21/30604 , H01L29/0657 , Y10S438/978
摘要： An SiO.sub.2 film doped with an impurity is formed on at least one portion of a surface of a semiconductor wafer. The wafer is selectively etched after a protective film for selective etching is disposed into a predetermined pattern on the SiO.sub.2 film. The impurity included in the SiO.sub.2 film can be diffused into the wafer to form a PN junction in the latter. Then the wafer is selectively etched until that surface of the wafer to which the PN junction is exposed is bevelled.
摘要翻译： 在半导体晶片的表面的至少一部分上形成掺杂有杂质的SiO 2膜。 在用于选择性蚀刻的保护膜设置在SiO 2膜上的预定图案中之后，选择性地蚀刻晶片。 包含在SiO 2膜中的杂质可以扩散到晶片中，以在后者中形成PN结。 然后选择性地蚀刻晶片，直到露出PN结的晶片的表面被斜切。
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公开(公告)号：US4277759A
公开(公告)日：1981-07-07
申请号：US40085
申请日：1979-05-17
CPC分类号： H01L33/24 , H01S5/2203 , H01S5/021 , H01S5/0224 , H01S5/024 , H01S5/0422 , H01S5/2238 , H01S5/3203
摘要： A first N-AlGaAs and a second N-GaAs layer are successively grown on an I-GaAs substrate. A third N-AlGaAs, a fourth P-AlGaAs and a fifth N-GaAs layer superpose one another on the second layer except for one lateral portion. Those portions of the five layers remote from the exposed second layer portion are changed into a P.sup.+ type and surrounded by a P zone. A positive and a negative electrode are located on the fifth layer and the exposed second layer portion respectively. The negative electrode is nearest to a laser region located in the second layer and can be secured to a heat sink.
摘要翻译： 在I-GaAs衬底上依次生长第一N-AlGaAs和第二N-GaAs层。 除了一个侧面部分之外，第三个N-AlGaAs，第四个P-AlGaAs和第五个N-GaAs层彼此叠置在第二层上。 远离曝光的第二层部分的五层的那些部分被改变为P +型并被P区包围。 正极和负极分别位于第五层和暴露的第二层部分上。 负极最靠近位于第二层的激光区域，并且可以固定到散热器。
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公开(公告)号：US4592061A
公开(公告)日：1986-05-27
申请号：US411188
申请日：1982-08-25
申请人： Hisao Kumabe , Toshio Sogo , Saburo Takamiya
发明人： Hisao Kumabe , Toshio Sogo , Saburo Takamiya
CPC分类号： H01S5/16 , H01S5/2203
摘要： A semiconductor laser is provided with an active layer which is bent at an angle at both ends of the resonator so that both ends of the waveguide path are formed by semiconductor cladding layers. The structure is effective in increasing the obtainable optical density while decreasing absorption at the waveguide ends.
摘要翻译： 半导体激光器设置有在谐振器的两端以一定角度弯曲的有源层，使得波导路径的两端由半导体包覆层形成。 该结构在增加可获得的光密度同时减少波导末端的吸收是有效的。
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公开(公告)号：US4581744A
公开(公告)日：1986-04-08
申请号：US485583
申请日：1983-04-14
CPC分类号： H01S5/18305 , H01S5/146 , H01S5/18308 , H01S5/18394
摘要： A surface-emitting injection type laser device has a semiconductor wafer including a first and a second main face opposite to each other and an active layer located on the side of the first main face. A single mode optical fiber chip has a first and second end surface perpendicular to its optical axis and is disposed on the semiconductor wafer with the first end surface contacting the second main face through a reflection preventing film. A dielectric film is disposed on the second end surface of the optical fiber chip to increase the reflection power at the second end surface and forming a resonator with the first main face of the semiconductor wafer.
摘要翻译： 表面发射注入型激光器件具有包括彼此相对的第一和第二主面以及位于第一主面一侧的有源层的半导体晶片。 单模光纤芯片具有垂直于其光轴的第一和第二端表面，并且设置在半导体晶片上，第一端面通过防反射膜与第二主面接触。 电介质膜设置在光纤芯片的第二端表面上，以增加第二端面处的反射功率，并与半导体晶片的第一主面形成谐振器。
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公开(公告)号：US4701926A
公开(公告)日：1987-10-20
申请号：US837358
申请日：1986-03-06
申请人： Yoshito Seiwa , Saburo Takamiya
发明人： Yoshito Seiwa , Saburo Takamiya
CPC分类号： H01S5/223 , H01S5/2232
摘要： A laser diode in accordance with the present invention comprises: a substrate (11) of p-GaAs; a current constricting layer (12) of n-GaAs formed with a slit (13) over the substrate, wherein the slit is opened through the constricting layer and separates the constricting layer into two areas; a liner(s) (21) of p-GaAs formed on at least both the inner side walls of the slit; a lower clad layer (14) of p-Ga.sub.0.6 Al.sub.0.4 As formed over the constricting layer, burying the slit; an active layer (15) of p-Ga.sub.0.9 Al.sub.0.1 As which is formed over the lower clad layer and has a refractive index higher than that of the lower clad layer; and an upper clad layer of n-Ga.sub.0.6 Al.sub.0.4 As which is formed over the active layer and has a refractive index lower than that of the active layer.
摘要翻译： 根据本发明的激光二极管包括：p-GaAs的衬底（11）; 在衬底上形成有狭缝（13）的n-GaAs电流收缩层（12），其中狭缝通过收缩层打开并将收缩层分成两个区域; 形成在狭缝的至少两个内侧壁上的p-GaAs的衬垫（21）; 在收缩层上形成的p-Ga0.6Al0.4As的下包层（14），掩埋该狭缝; 形成在下包层上的折射率高于下包层的折射率的p-Ga0.9Al0.1As的有源层（15） 以及在有源层上形成的折射率低于有源层的折射率的n-Ga0.6Al0.4As的上包层。
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公开(公告)号：US4675875A
公开(公告)日：1987-06-23
申请号：US602470
申请日：1984-04-20
申请人： Saburo Takamiya
发明人： Saburo Takamiya
CPC分类号： H01L33/24 , H01L33/0062 , H01S5/18305 , H01S5/18308 , H01S5/18388
摘要： A surface emitting semiconductor laser comprising an active layer having a convex portion is disclosed in this specification. This surface emitting semiconductor laser has a structure in which an n-type first semiconductor layer, a p-type active layer and a p-type second semiconductor layer are formed one upon another on one surface of an n-type semiconductor substrate having a concave portion. The active layer has a convex portion corresponding to the concave portion of the semiconductor substrate. On the other surface of the semiconductor substrate, there is provided a negative electrode in the form of a ring surrounding the above stated concave portion. A positive electrode is electrically connected to the above stated second semiconductor layer through an insulating layer having a contact hole. A forbidden band width of the material forming the active layer is smaller than the respective forbidden band widths of the materials forming the other semiconductor layers. The active layer has a large refractive index with respect to the laser light to be oscillated, as compared with the refractive indexes of the other semiconductor layers. Under these conditions, the convex portion of the active layer functions as an optical convex lens. Laser light is generated in a direction perpendicular to the active layer and converged by the above stated convex lens so that it is emitted to the exterior.
摘要翻译： 在本说明书中公开了包括具有凸部的有源层的表面发射半导体激光器。 该表面发射半导体激光器具有这样的结构，其中n型第一半导体层，p型有源层和p型第二半导体层在具有凹形的n型半导体衬底的一个表面上一个接一个地形成 一部分。 有源层具有与半导体基板的凹部对应的凸部。 在半导体基板的另一个表面上，设置环绕上述凹部的环状的负极。 正极通过具有接触孔的绝缘层与上述第二半导体层电连接。 形成有源层的材料的禁带宽度小于形成其它半导体层的材料的相应禁带宽度。 与其他半导体层的折射率相比，有源层相对于要振荡的激光具有大的折射率。 在这些条件下，有源层的凸部用作光学凸透镜。 激光在与有源层垂直的方向上产生，并由上述凸透镜会聚，从而将其发射到外部。
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