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    Polishing slurry for CMP and polishing method
    2.
    发明申请
    Polishing slurry for CMP and polishing method 审中-公开
    抛光浆料用于CMP和抛光方法

    公开(公告)号：US20070117394A1

    公开(公告)日：2007-05-24

    申请号：US11545787

    申请日：2006-10-11

    申请人： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

    发明人： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

    IPC分类号： H01L21/66 ,  H01L21/461

    CPC分类号： C09G1/02 ,  C23F3/04 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76865

    摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.

    摘要翻译： 本发明提供了通过抑制电子在阻挡导体和导电物质之间的边界附近转移而抑制导电物质的布线的腐蚀或抑制阻挡导体和导电物质的双金属腐蚀的CMP抛光浆料，例如 作为铜。 本发明提供了用于CMP的抛光浆料，用于至少对与导体层接触的导体层和导电物质层进行抛光，其中在50±5℃下导电物质与导体之间的电位差的绝对值为0.25 当电位计的正电极和负电极分别连接到导电物质和导体时，抛光浆料中的V或更小。 用于CMP的抛光浆料优选包含至少一种选自含有羟基，羰基，羧基，氨基，酰胺基和亚磺酰基中的任何一种的杂环化合物并且含有氮和硫原子中的至少一个的化合物。

    CMP POLISHING SLURRY, ADDITIVE LIQUID FOR CMP POLISHING SLURRY, AND SUBSTRATE-POLISHING PROCESSES USING THE SAME
    5.
    发明申请
    CMP POLISHING SLURRY, ADDITIVE LIQUID FOR CMP POLISHING SLURRY, AND SUBSTRATE-POLISHING PROCESSES USING THE SAME 审中-公开
    CMP抛光浆料，用于CMP抛光浆料的添加剂液体，以​​及使用其的底物抛光方法

    公开(公告)号：US20100015806A1

    公开(公告)日：2010-01-21

    申请号：US12440755

    申请日：2007-09-13

    申请人： Masato Fukasawa ,  Chiaki Yamagishi ,  Tadahiro Kimura ,  Toshiaki Akutsu

    发明人： Masato Fukasawa ,  Chiaki Yamagishi ,  Tadahiro Kimura ,  Toshiaki Akutsu

    IPC分类号： H01L21/304 ,  C09K13/00

    CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212

    摘要： The invention relates to a CMP polishing slurry containing cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer includes a polymer obtained by polymerizing a monomer including at least one of a carboxylic acid having an unsaturated double bond and a salt thereof, using a reducing inorganic acid salt and oxygen as a redox polymerization initiator; an additive liquid for CMP polishing slurry; and substrate-polishing processes using the same. This makes it possible to polish a silicon oxide film effectively in a CMP technique for planarizing an interlayer dielectric, a BPSG film or a shallow trench isolating insulated film.

    摘要翻译： 本发明涉及含有氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中所述水溶性聚合物包括通过聚合包含至少一种具有不饱和羧酸的羧酸的单体获得的聚合物 双键及其盐，使用还原性无机酸盐和氧作为氧化还原聚合引发剂; 用于CMP抛光浆料的添加剂液体; 和使用其的基板抛光工艺。 这使得可以在用于平坦化层间电介质，BPSG膜或浅沟槽隔离绝缘膜的CMP技术中有效地抛光氧化硅膜。

    Optical waveguide and method for preparing the same
    7.
    发明授权
    Optical waveguide and method for preparing the same 失效
    光波导及其制备方法

    公开(公告)号：US06810189B2

    公开(公告)日：2004-10-26

    申请号：US10120185

    申请日：2002-04-11

    申请人： Tatemi Ido ,  Takamitsu Nagara ,  Tadahiro Kimura ,  Tooru Takahashi

    发明人： Tatemi Ido ,  Takamitsu Nagara ,  Tadahiro Kimura ,  Tooru Takahashi

    IPC分类号： G02B610

    CPC分类号： G02B6/1221 ,  G02B6/12004 ,  G02B6/42

    摘要： A polymeric optical waveguide substrate includes a first region provided thereon with a polymer optical waveguide and an optical waveguide-free second region, the first and second regions being on the same substrate, wherein an adhesive layer is between the lowermost polymer layer constituting the optical waveguide in the first region and the substrate, and wherein a groove intrudes into the substrate at the boundary between the first and second regions. A method for preparing the waveguide substrate includes the steps of applying an adhesive layer onto the first region while the second region is free of any adhesive layer; applying a polymer onto the whole surface of the substrate to give a polymer layer for forming an optical waveguide following the formation of the adhesive layer; cutting the polymer layer at the boundary between the first and second regions; and peeling off or removing the polymer on the second region.

    摘要翻译： 聚合物光波导基板包括设置有聚合物光波导的第一区域和无光波导的第二区域，第一和第二区域在同一基板上，其中粘合剂层位于构成光波导的最下面的聚合物层之间 在第一区域和衬底中，并且其中沟槽在第一和第二区域之间的边界处侵入衬底。 一种制备波导基片的方法包括以下步骤：在第二区域不含任何粘合剂层的同时将粘合剂层施加到第一区域上; 在聚合物的整个表面上施加聚合物，得到在形成粘合剂层之后形成光波导的聚合物层; 在第一和第二区域之间的边界切割聚合物层; 并剥离或除去第二区域上的聚合物。

    Radiation shielding body
    8.
    发明授权
    Radiation shielding body 失效
    辐射屏蔽体

    公开(公告)号：US5859438A

    公开(公告)日：1999-01-12

    申请号：US912343

    申请日：1997-08-18

    申请人： Isao Nemezawa ,  Tadahiro Kimura ,  Akira Mizuochi ,  Tetsu Oomori

    发明人： Isao Nemezawa ,  Tadahiro Kimura ,  Akira Mizuochi ,  Tetsu Oomori

    IPC分类号： G21F3/04 ,  G21F3/00

    CPC分类号： G21F3/04

    摘要： A radiation shielding body unit comprises a bag, a reinforcing wall connecting between inner wall surfaces of the bag opposite to each other, a liquid supply/discharge port for radiation shielding liquid, provided in the bag, and a hole portion provided in the bag for engagement with a connection device used when the bag is supported by suspension. And a radiation shielding body comprises a frame and a plurality of the above-mentioned radiation shielding body units, each of the radiation shielding body units is suspendedly supported by the frame through a connecting device engaged with the hole portion of each of the radiation shielding body units.

    摘要翻译： 辐射屏蔽体单元包括一个袋子，一个连接在彼此相对的袋的内壁表面之间的加强壁，设置在该袋子中的一个用于辐射屏蔽液体的液体供给/排放口，以及一个设置在该袋中的孔部分 与通过悬挂支撑袋时使用的连接装置的接合。 并且辐射屏蔽体包括框架和多个上述辐射屏蔽体单元，每个辐射屏蔽体单元通过与每个辐射屏蔽体的孔部分接合的连接装置被框架悬挂支撑 单位。

    Electron beam welding method
    9.
    发明授权
    Electron beam welding method 有权
    电子束焊接法

    公开(公告)号：US09162316B2

    公开(公告)日：2015-10-20

    申请号：US13812074

    申请日：2011-07-20

    申请人： Ryuichi Narita ,  Takashi Hanioka ,  Tadahiro Kimura ,  Masahiro Kimura ,  Masao Shiota

    发明人： Ryuichi Narita ,  Takashi Hanioka ,  Tadahiro Kimura ,  Masahiro Kimura ,  Masao Shiota

    IPC分类号： B23K15/00

    CPC分类号： B23K15/0046 ,  B23K15/00 ,  B23K15/0053 ,  B23K15/006

    摘要： An electron beam welding method capable of restoring toughness even when high heat input welding is performed. The electron beam welding method comprises: forming a first weld bead (3) so as to include a groove (2) provided at the butt portions of two base materials (1), and forming a second weld bead (4) and a third weld bead (5) having a narrower width than the first weld bead (3), at predetermined positions displaced from the groove (2) and centered symmetrically about the butt portions so as to include a portion of the first weld bead (3), using a lower heat input than that used during formation of the first weld bead (3).

    摘要翻译： 即使进行高热输入焊接也能够恢复韧性的电子束焊接方法。 电子束焊接方法包括：形成第一焊道（3），以包括设置在两个基材（1）的对接部分处的凹槽（2），并形成第二焊道（4）和第三焊缝 具有比第一焊道（3）窄的宽度的胎圈（5），在从凹槽（2）移位并围绕对接部分对称地定中心的预定位置处，以便包括第一焊道（3）的一部分，使用 比在第一焊道（3）的形成期间使用的热输入更低的热输入。

    POLISHING SLURRY FOR CMP, AND POLISHING METHOD
    10.
    发明申请
    POLISHING SLURRY FOR CMP, AND POLISHING METHOD 有权
    CMP抛光浆和抛光方法

    公开(公告)号：US20090209104A1

    公开(公告)日：2009-08-20

    申请号：US12307440

    申请日：2007-07-04

    申请人： Tadahiro Kimura

    发明人： Tadahiro Kimura

    IPC分类号： H01L21/302 ,  C09K13/00

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463

    摘要： Disclosed is a polishing slurry for CMP which makes it possible to polish a barrier layer, a wiring metal layer and an interlayer dielectric continuously, and restrain a phenomenon that the interlayer dielectric in a region near the wiring metal layer is excessively shaven off so that a depression is generated. A polishing slurry, for CMP, containing abrasive particles, an acid, a tolyltriazole compound represented by the following general formula (I), and water: wherein R1s each independently represent an alkylene group having 1 to 4 carbon atoms, and R2 represents an alkylene group having 1 to 4 carbon atoms.

    摘要翻译： 公开了一种用于CMP的抛光浆料，其可以连续地抛光阻挡层，布线金属层和层间电介质，并且抑制在布线金属层附近的区域中的层间电介质被过度地遮蔽的现象， 产生抑郁症。 用于CMP的抛光浆料，其含有磨料颗粒，酸，由以下通式（I）表示的甲苯基三唑化合物和水：其中R 1各自独立地表示具有1至4个碳原子的亚烷基，R 2表示亚烷基 具有1至4个碳原子的基团。