摘要:
There are provided an improved light receiving member for use in electrophotography and a process for the production thereof. The light receiving member comprises a substrate usable for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of an amorphous or polycrystalline material containing silicon atom as the main constituent and an element for controlling the conductivity, a photoconductive layer formed of an amorphous material containing silicon atom as the main constituent and at least one kind selected from hydrogen atom and halogen atom and a surface layer formed of a polycrystalline material containing silicon atom, carbon atom and hydrogen atom. The polycrystalline material is a polycrystalline material prepared by introducing a precursor capable of contributing to formation of the layer and an active species reactive with the precursor separately into a film deposition space and chemically reacting them.
摘要:
There are provided on improved light receiving member for use in electrophotography and a process for the production thereof. The light receiving member comprises a substrate usable for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of a polycrystalline material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, said polycrystalline material of which the charge injection inhibition layer being formed being a polycrystalline material prepared by introducing a precursor capable of contributing to formation of the charge injection inhibition layer and an active species reactive with the precursor separately into a film deposition space and chemically reacting them.
摘要:
There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by an absorption layer for light of long wavelength formed of a polycrystal material containing silicon atoms and germanium atoms, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range of from 1.times.10.sup.-3 to 40 atomic %. The light receiving layer may have a charge injection inhibition layer or/and a contact layer.
摘要:
An electrophotographic member has an electrophotographic substrate and a light receiving layer having (i) a 0.01 to 10 .mu.m thick charge injection inhibition layer, (ii) a 1 to 100 .mu.m thick photoconductive layer and (iii) a 0.003 to 30 .mu.m thick surface layer. The charge injection inhibition layer includes a polycrystal material containing silicon atoms as the main constituent, 30 to 5.times.10.sup.4 atomic ppm of a conductivity controlling element of Group III and Group V elements uniformly or nonuniformly distributed in the thickness direction and 1-40 atomic % of hydrogen atoms and/or halogen atoms. The photoconductive layer is an amorphous semiconductor material containing silicon atoms as the main constituent and 1-40 atomic % of hydrogen atoms and/or halogen atoms. The surface layer includes an amorphous material: A--(Si.sub.x C.sub.1-x).sub.y :H.sub.1-y wherein x is 0.1 to 0.99999 and y is 0.6 to 0.999. The member stably provides, even upon repeated use, highly resolved visible images with clearer tone which are highly dense and high in quality.
摘要:
There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a photoconductive layer and a surface layer, the photoconductive layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and the surface layer being formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, and the amount of the hydrogen atoms contained in the surface layer being in the range of 41 to 70 atomic %.
摘要:
There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a charge injection inhibition layer, a photoconductive layer and a surface layer, the charge injection inhibition layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity, the photoconductive layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and the surface layer being formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, and the amount of the hydrogen atoms contained in the surface layer being in the range from 41 to 70 atomic %.
摘要:
A light-receiving member for electrophotography comprises a substrate and a light-receiving layer provided on the substrate comprising a photoconductive layer exhibiting photoconductivity comprising an amorphous material containing at least one of hydrogen atoms and halogen atoms as the constituent in a matrix of silicon atoms and a surface layer comprising an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms and the constituents, said surface layer being changed in the distribution concentration in the layer thickness direction of the constituent elements such that matching optical gap is obtained at the interface with said photoconductive layer, and the maximum distribution concentration of the hydrogen atoms within said surface layer being 41 to 70 atomic percent.
摘要:
There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of a polycrystal material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity which functions to prevent a charge from being injected from the side of the substrate, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range from 41 to 70 atomic %. The light receiving layer may have a contact layer and/or an absorption layer of light having a long wavelength.
摘要:
There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a contact layer formed of a polycrystal material containing silicon atoms as the main constituent atoms and at least one kind selected from nitrogen atoms, oxygen atoms and carbon atoms, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range from 1.times.10.sup.-3 to 40 atomic %. The light receiving layer may have a charge injection inhibition layer or/and an absorption layer of light having a long wavelength.
摘要:
This is provided an improved light receiving member having at least a photoconductive layer constituted with A-Si(H,X) series material and a surface layer constituted with A-Si(C,O,N)(H,X) for use in electrophotography, etc. which is characterized in that the atom(C,O,N) is contained in the surface layer in a state that the concentration of the atom(C,O,N) is grown increasingly starting from the position of the interface between the surface layer and the photoconductive layer while leaving a portion corresponding to a refractive index difference (.DELTA.n) [.DELTA.n.ltoreq.0.62] between the refractive index of the surface layer and that of the photoconductive layer which can be disregarded in the image-making process toward the free surface of the surface layer.
摘要翻译:提供了一种改进的光接收元件,其至少具有由A-Si(H,X)系列材料构成的光电导层和由A-Si(C,O,N)(H,X)构成的表面层,用于 电子照相术等,其特征在于原子(C,O,N)以从界面的位置开始增长的原子(C,O,N)的浓度的状态包含在表面层中的原子 在表面层和光电导层之间,同时留下对应于表面层的折射率和光导体层的折射率差异(DELTA n)之间的折射率差(DELTA n <0.62)的部分,其可以被忽略在 图像制作过程朝向表层的自由表面。