Light receiving member for use in electrophotography and process for the
production thereof
    1.
    发明授权
    Light receiving member for use in electrophotography and process for the production thereof 失效
    用于电子照相的光接收元件及其制造方法

    公开(公告)号:US4824749A

    公开(公告)日:1989-04-25

    申请号:US28777

    申请日:1987-03-23

    IPC分类号: G03G5/08 G03G5/082 G03G5/14

    摘要: There are provided an improved light receiving member for use in electrophotography and a process for the production thereof. The light receiving member comprises a substrate usable for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of an amorphous or polycrystalline material containing silicon atom as the main constituent and an element for controlling the conductivity, a photoconductive layer formed of an amorphous material containing silicon atom as the main constituent and at least one kind selected from hydrogen atom and halogen atom and a surface layer formed of a polycrystalline material containing silicon atom, carbon atom and hydrogen atom. The polycrystalline material is a polycrystalline material prepared by introducing a precursor capable of contributing to formation of the layer and an active species reactive with the precursor separately into a film deposition space and chemically reacting them.

    摘要翻译: 提供了用于电子照相术的改进的光接收元件及其生产方法。 光接收部件包括可用于电子照相的基板和由含有硅原子作为主要成分的非晶或多晶材料形成的电荷注入阻挡层和用于控制导电性的元件构成的光接收层,由 含有硅原子作为主要成分的非晶质材料和选自氢原子和卤素原子的至少一种以及由含有硅原子,碳原子和氢原子的多晶材料形成的表面层。 多晶材料是通过将能够有助于形成层的前体和与前体反应的活性物质引入到膜沉积空间中并使其化学反应而制备的多晶材料。

    Electrophotographic light receiving member having polycrystalline
silicon charge injection inhibition layer prepared by chemical reaction
of excited precursors and A-SI:C:H surface layer
    2.
    发明授权
    Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer 失效
    具有通过激发前体和A-SI:C:H表面层的化学反应制备的多晶硅电荷注入抑制层的电子照相光接收元件

    公开(公告)号:US4940642A

    公开(公告)日:1990-07-10

    申请号:US302114

    申请日:1989-01-26

    CPC分类号: G03G5/08242 G03G5/08235

    摘要: There are provided on improved light receiving member for use in electrophotography and a process for the production thereof. The light receiving member comprises a substrate usable for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of a polycrystalline material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, said polycrystalline material of which the charge injection inhibition layer being formed being a polycrystalline material prepared by introducing a precursor capable of contributing to formation of the charge injection inhibition layer and an active species reactive with the precursor separately into a film deposition space and chemically reacting them.

    摘要翻译: 提供用于电子照相术的改进的光接收元件及其生产方法。 光接收部件包括可用于电子照相的基板和由含有硅原子作为主要成分原子的多晶材料形成的电荷注入阻挡层和用于控制导电性的元件构成的光接收层,由非晶形成的光电导层 含有硅原子作为主要成分原子的材料和选自氢原子和卤素原子的至少一种以及由含有硅原子,碳原子和氢原子的无定形材料形成的表面层,所述多晶材料的电荷注入抑制层 形成为通过将能够有助于形成电荷注入抑制层的前体和与前体分别反应的活性物质引入到膜沉积空间中并使其化学反应而制备的多晶材料。

    Electrophotographic light receiving member with surface layer of
a-(Si.sub.x C.sub.1-x).sub.y :H.sub.1-y wherein x is 0.1-0.99999 and y
is 0.3-0.59
    3.
    发明授权
    Electrophotographic light receiving member with surface layer of a-(Si.sub.x C.sub.1-x).sub.y :H.sub.1-y wherein x is 0.1-0.99999 and y is 0.3-0.59 失效
    具有a-(SixC1-x)y:H1-y表面层的电子照相光接收元件,其中x为0.1-0.99999,y为0.3-0.59

    公开(公告)号:US4818655A

    公开(公告)日:1989-04-04

    申请号:US19127

    申请日:1987-02-26

    IPC分类号: G03G5/082 G03G5/085

    摘要: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by an absorption layer for light of long wavelength formed of a polycrystal material containing silicon atoms and germanium atoms, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range of from 1.times.10.sup.-3 to 40 atomic %. The light receiving layer may have a charge injection inhibition layer or/and a contact layer.

    摘要翻译: 提供了一种用于电子照相的改进的光接收元件,其包括用于电子照相的基底和由用于由含有硅原子和锗原子的多晶材料形成的长波长的光的吸收层构成的光接收层,由 含有硅原子作为主要成分原子的无定形材料和由含有硅原子,碳原子和氢原子的无定形材料形成的表面层,表面层中所含的氢原子的量在1×10 -3〜 40原子%。 光接收层可以具有电荷注入抑制层或/和接触层。

    Light receiving member for use in electrophotography
    4.
    发明授权
    Light receiving member for use in electrophotography 失效
    用于电子照相术的光接收元件

    公开(公告)号:US4804604A

    公开(公告)日:1989-02-14

    申请号:US15924

    申请日:1987-02-18

    IPC分类号: G03G5/08 G03G5/082 G03G5/085

    摘要: An electrophotographic member has an electrophotographic substrate and a light receiving layer having (i) a 0.01 to 10 .mu.m thick charge injection inhibition layer, (ii) a 1 to 100 .mu.m thick photoconductive layer and (iii) a 0.003 to 30 .mu.m thick surface layer. The charge injection inhibition layer includes a polycrystal material containing silicon atoms as the main constituent, 30 to 5.times.10.sup.4 atomic ppm of a conductivity controlling element of Group III and Group V elements uniformly or nonuniformly distributed in the thickness direction and 1-40 atomic % of hydrogen atoms and/or halogen atoms. The photoconductive layer is an amorphous semiconductor material containing silicon atoms as the main constituent and 1-40 atomic % of hydrogen atoms and/or halogen atoms. The surface layer includes an amorphous material: A--(Si.sub.x C.sub.1-x).sub.y :H.sub.1-y wherein x is 0.1 to 0.99999 and y is 0.6 to 0.999. The member stably provides, even upon repeated use, highly resolved visible images with clearer tone which are highly dense and high in quality.

    摘要翻译: 电子照相构件具有电子照相基板和光接收层,其具有(i)0.01至10μm厚的电荷注入阻挡层,(ii)1至100μm厚的光电导层和(iii)0.003至30μm 厚表层。 电荷注入抑制层包括以硅原子为主要成分的多晶材料,在厚度方向上均匀或不均匀分布的III族和V族元素的导电性控制元素为30〜5×10 4原子ppm,氢为1-40原子% 原子和/或卤素原子。 光电导层是含有硅原子和1-40原子%氢原子和/或卤素原子的非晶半导体材料。 表面层包括无定形材料:A-(SixC1-x)y:H1-y,其中x为0.1至0.99999,y为0.6至0.999。 即使重复使用,该构件稳定地提供高度密集且质量高的清晰的色调的高度分辨的可见图像。

    Light receiving member for use in electrophotography having an amorphous
silicon layer
    5.
    发明授权
    Light receiving member for use in electrophotography having an amorphous silicon layer 失效
    用于具有非晶硅层的电子照相的光接收元件

    公开(公告)号:US4788120A

    公开(公告)日:1988-11-29

    申请号:US165401

    申请日:1988-02-16

    CPC分类号: G03G5/08221

    摘要: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a photoconductive layer and a surface layer, the photoconductive layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and the surface layer being formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, and the amount of the hydrogen atoms contained in the surface layer being in the range of 41 to 70 atomic %.

    摘要翻译: 提供一种用于电子照相的改进的光接收元件,其包括用于电子照相的基底和由光电导层和表面层构成的光接收层,光电导层由含有硅原子作为主要成分原子的非晶态材料形成,以及 选自氢原子和卤素原子中的至少一种,表面层由含有硅原子,碳原子和氢原子的无定形材料形成,表面层中所含的氢原子的量在41〜 70原子%。

    Light receiving member for use in electrophotography comprising surface
layer of a-Si:C:H
    6.
    发明授权
    Light receiving member for use in electrophotography comprising surface layer of a-Si:C:H 失效
    用于电子照相术的光接收元件,包括a-Si:C:H的表面层

    公开(公告)号:US4738913A

    公开(公告)日:1988-04-19

    申请号:US005884

    申请日:1987-01-21

    IPC分类号: H01L31/08 G03G5/08 G03G5/082

    摘要: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a charge injection inhibition layer, a photoconductive layer and a surface layer, the charge injection inhibition layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity, the photoconductive layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and the surface layer being formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, and the amount of the hydrogen atoms contained in the surface layer being in the range from 41 to 70 atomic %.

    摘要翻译: 提供一种用于电子照相的改进的光接收元件,包括电子照相用基板和由电荷注入抑制层,光电导层和表面层构成的光接收层,电荷注入阻挡层由含有 硅原子作为主要成分原子和用于控制导电性的元素,光电导层由含有硅原子作为主要成分原子的非晶态材料和选自氢原子和卤素原子的至少一种形成,并且形成表面层 含有硅原子,碳原子和氢原子的无定形材料,表面层中所含的氢原子的量为41〜70原子%。

    Light receiving member for use in electrophotography
    8.
    发明授权
    Light receiving member for use in electrophotography 失效
    用于电子照相术的光接收元件

    公开(公告)号:US4792509A

    公开(公告)日:1988-12-20

    申请号:US10001

    申请日:1987-02-02

    IPC分类号: G03G5/082 G03G5/085

    摘要: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of a polycrystal material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity which functions to prevent a charge from being injected from the side of the substrate, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range from 41 to 70 atomic %. The light receiving layer may have a contact layer and/or an absorption layer of light having a long wavelength.

    摘要翻译: 提供了一种用于电子照相的改进的光接收元件,其包括用于电子照相的基片和由含有硅原子作为主要成分原子的多晶材料形成的电荷注入抑制层构成的光接收层和用于控制导电性的元件 用于防止从基板侧注入电荷的功能,由含有硅原子作为主要成分原子的非晶态材料形成的光电导层和由含有硅原子,碳原子和氢原子的无定形材料形成的表面层, 包含在表面层中的氢原子的量在41至70原子%的范围内。 光接收层可以具有接触层和/或具有长波长的光的吸收层。

    Light receiving member for use in electrophotography comprising
amorphous silicon layer and polycrystalline layer
    9.
    发明授权
    Light receiving member for use in electrophotography comprising amorphous silicon layer and polycrystalline layer 失效
    用于电子照相术的光接收元件,包括非晶硅层和多晶层

    公开(公告)号:US4780387A

    公开(公告)日:1988-10-25

    申请号:US16777

    申请日:1987-02-20

    IPC分类号: G03G5/08 G03G5/082

    CPC分类号: G03G5/08235 G03G5/08242

    摘要: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a contact layer formed of a polycrystal material containing silicon atoms as the main constituent atoms and at least one kind selected from nitrogen atoms, oxygen atoms and carbon atoms, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range from 1.times.10.sup.-3 to 40 atomic %. The light receiving layer may have a charge injection inhibition layer or/and an absorption layer of light having a long wavelength.

    摘要翻译: 提供了一种用于电子照相的改进的光接收元件,其包括用于电子照相的基底和由包含硅原子作为主要成分原子的多晶材料形成的接触层和从氮原子中选出的至少一种的光接收层, 氧原子和碳原子,由含有硅原子作为主要成分原子的无定形材料形成的光电导层和由含有硅原子,碳原子和氢原子的无定形材料形成的表面层,包含在 表面层在1×10 -3至40原子%的范围内。 光接收层可以具有电荷注入抑制层和/或具有长波长的光的吸收层。

    Layered amorphous silicon photoconductor with surface layer having
specific refractive index properties
    10.
    发明授权
    Layered amorphous silicon photoconductor with surface layer having specific refractive index properties 失效
    具有具有特定折射率特性的表面层的分层非晶硅光电导体

    公开(公告)号:US4795691A

    公开(公告)日:1989-01-03

    申请号:US38885

    申请日:1987-04-15

    IPC分类号: G03G5/082

    摘要: This is provided an improved light receiving member having at least a photoconductive layer constituted with A-Si(H,X) series material and a surface layer constituted with A-Si(C,O,N)(H,X) for use in electrophotography, etc. which is characterized in that the atom(C,O,N) is contained in the surface layer in a state that the concentration of the atom(C,O,N) is grown increasingly starting from the position of the interface between the surface layer and the photoconductive layer while leaving a portion corresponding to a refractive index difference (.DELTA.n) [.DELTA.n.ltoreq.0.62] between the refractive index of the surface layer and that of the photoconductive layer which can be disregarded in the image-making process toward the free surface of the surface layer.

    摘要翻译: 提供了一种改进的光接收元件,其至少具有由A-Si(H,X)系列材料构成的光电导层和由A-Si(C,O,N)(H,X)构成的表面层,用于 电子照相术等,其特征在于原子(C,O,N)以从界面的位置开始增长的原子(C,O,N)的浓度的状态包含在表面层中的原子 在表面层和光电导层之间,同时留下对应于表面层的折射率和光导体层的折射率差异(DELTA n)之间的折射率差(DELTA n <0.62)的部分,其可以被忽略在 图像制作过程朝向表层的自由表面。