公开(公告)号：US20050072444A1

公开(公告)日：2005-04-07

申请号：US10791856

申请日：2004-03-04

申请人： Shigeru Shirayone ,  Tetsuo Ono ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Takahiro Abe ,  Takahiro Shimomura ,  Hiroyuki Kitsunai

发明人： Shigeru Shirayone ,  Tetsuo Ono ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Takahiro Abe ,  Takahiro Shimomura ,  Hiroyuki Kitsunai

IPC分类号： B08B7/00 ,  H01L21/3213 ,  B08B3/12

CPC分类号： H01J37/32082 ,  B08B7/0035 ,  H01J2237/334 ,  H01L21/32136

摘要： A method for processing a plasma processing apparatus having plasma generating means 3, 8, 10, 13 through 15 for generating plasma within a processing chamber, a high-frequency power applying means 18 for applying high-frequency power to an object 17 to be processed, a processing chamber 1 to which an evacuating device 7 is connected and capable of having its interior evacuated, and a gas supply device (not shown) for the processing chamber, wherein the method comprises mounting a Si wafer 17 on an electrode 4 for holding the object to be processed, introducing hydrobromic gas and chlorine gas into the processing chamber and generating plasma, and removing the aluminum-based deposit adhered to the interior of the processing chamber.

摘要翻译： 一种用于处理具有用于在处理室内产生等离子体的等离子体产生装置3,8,10,13至15的等离子体处理装置的方法，用于向要处理的物体17施加高频电力的高频电力施加装置18 ，排气装置7连接并能够将其内部抽真空的处理室1和用于处理室的气体供给装置（未示出），其中该方法包括将Si晶片17安装在用于保持的电极4上 要处理的物体，将氢溴酸气体和氯气引入处理室并产生等离子体，以及去除附着在处理室内部的铝基沉积物。

公开(公告)号：US20080257863A1

公开(公告)日：2008-10-23

申请号：US11849264

申请日：2007-08-31

申请人： Hiroyuki Kitsunai ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Tetsuo Ono

发明人： Hiroyuki Kitsunai ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Tetsuo Ono

IPC分类号： C23F1/00

CPC分类号： H01J37/32477 ,  B08B7/0035 ,  H01J37/32935

摘要： A plasma processing apparatus is disclosed for removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus includes a plasma generating means, a monitor means for detecting the existence of a reaction product containing a material constituting an inner wall of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall of the processing chamber has exceeded a predetermined amount. The plasma processing apparatus is configured such that plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O2 gas or F gas.

摘要翻译： 公开了一种用于去除处理室中的沉积膜并抑制壁表面材料的腐蚀的等离子体处理装置。 等离子体处理装置包括等离子体产生装置，用于检测含有构成处理室内壁的材料的反应产物的存在的监视装置，以及用于通知含有构成材料的反应产物的存在的报警装置 处理室的内壁已经超过预定量。 等离子体处理装置被配置为使得对于每个任意蚀刻工艺进行等离子体清洗，并且随后使用O 2气体或F气体执行壁表面稳定处理。

公开(公告)号：US20050087297A1

公开(公告)日：2005-04-28

申请号：US10912177

申请日：2004-08-06

申请人： Hiroyuki Kitsunai ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Tetsuo Ono

发明人： Hiroyuki Kitsunai ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Tetsuo Ono

IPC分类号： B08B7/00 ,  H01J37/32 ,  H01L21/306

CPC分类号： H01J37/32477 ,  B08B7/0035 ,  H01J37/32935

摘要： The invention aims at providing a plasma processing apparatus capable of removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus for subjecting an object to be processed to vacuum processing by introducing a processing gas into a processing chamber 101 and generating plasma 110 comprises plasma generating means 106 through 108, a monitor means 112 for detecting the existence of a reaction product containing a material constituting an inner wall 102 of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall 102 of the processing chamber has exceeded a predetermined amount, wherein a plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O2 gas or F gas.

摘要翻译： 本发明的目的是提供一种能够去除处理室中的沉积膜并抑制壁表面材料的腐蚀的等离子体处理装置。 用于通过将处理气体引入处理室101并产生等离子体110来对被处理物进行真空处理的等离子体处理装置包括等离子体产生装置106至108，监测装置112，用于检测含有 构成处理室的内壁102的材料，以及用于通知含有构成处理室的内壁102的材料的反应产物的存在已经超过预定量的报警装置，其中对每一个执行等离子体清洁 随后使用O 2气体或F气体进行任意蚀刻处理和壁表面稳定化处理。

公开(公告)号：US20050133162A1

公开(公告)日：2005-06-23

申请号：US10784275

申请日：2004-02-24

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： H01L21/3065 ,  C23F4/00 ,  H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.

摘要翻译： 一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁的10％的接地导电部件21a 内壁101的区域，具有允许来自等离子体的直流电流流过的结构，其中由导电构件21形成的直流接地位于等离子体（或等离子体密度）的浮动电位高于 位于晶片保持电极14附近的等离子体9的浮动电位，其中存在相对较大的壁切屑。

公开(公告)号：US07601241B2

公开(公告)日：2009-10-13

申请号：US10784275

申请日：2004-02-24

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： C23C16/50 ,  C23C16/505 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/30 ,  C23C16/38 ,  C23C16/32

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.

摘要翻译： 一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁面积10％的接地导电部件21a 并且具有允许来自等离子体的直流电流流过其中的结构，其中由导电构件21形成的DC接地位于等离子体的浮动电位（或等离子体密度）高于浮动的位置 位于晶片保持电极14附近的等离子体9的电位，其中存在相对较大的壁切屑。

公开(公告)号：US20070175586A1

公开(公告)日：2007-08-02

申请号：US11696280

申请日：2007-04-04

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.

摘要翻译： 一种等离子体处理方法，用于通过向反应室施加高频处理具有等离子体的衬底，以及向衬底保持器施加第二高频包括覆盖反应室内壁的总表面积的至少90％，其中， 直接暴露于具有电介质的等离子体，设置包括接地的导电部分并且具有小于反应室的内壁的10％的面积的DC地球，并且对具有所述反应室的反应室中的衬底进行等离子体处理 位于位于反应室最靠近衬底的内壁处的等离子体的浮置电位高于等离子体的浮动电位的位置。

公开(公告)号：US07771607B2

公开(公告)日：2010-08-10

申请号：US11696280

申请日：2007-04-04

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.

摘要翻译： 一种等离子体处理方法，用于通过向反应室施加高频处理具有等离子体的衬底，以及向衬底保持器施加第二高频包括覆盖反应室内壁的总表面积的至少90％，其中， 直接暴露于具有电介质的等离子体，设置包括接地的导电部分并且具有小于反应室的内壁的10％的面积的DC地球，并且对具有所述反应室的反应室中的衬底进行等离子体处理 位于位于反应室最靠近衬底的内壁处的等离子体的浮置电位高于等离子体的浮动电位的位置。

公开(公告)号：US20070134922A1

公开(公告)日：2007-06-14

申请号：US11354919

申请日：2006-02-16

申请人： Masahito Mori ,  Toshiaki Nishida ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Hideyuki Kazumi ,  Kazutami Tago

发明人： Masahito Mori ,  Toshiaki Nishida ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Hideyuki Kazumi ,  Kazutami Tago

IPC分类号： H01L21/302

CPC分类号： H01L21/32136 ,  H01L21/28123 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/84 ,  H01L22/26 ,  H01L29/66795

摘要： An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.

摘要翻译： 提供一种能够以高选择性对在由高介电常数或“高k”绝缘体制成的电介质材料层上形成的含过渡金属元素的电极材料层进行蚀刻的蚀刻技术。 为此，将工件放置在位于真空处理容器内的下电极上。 工件具有电极材料层的多层结构，其中包含过渡金属元件和由高k绝缘体制成的电介质材料层。 然后，在将真空​​处理容器内的处理气体导入真空处理容器的内部的同时，向真空处理容器的内部施加高频电力，进行等离子体转换，使工件在其表面被蚀刻。 当蚀刻电极材料层时，作为处理气体供给HCl气体。

公开(公告)号：US07931776B2

公开(公告)日：2011-04-26

申请号：US11512339

申请日：2006-08-30

申请人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

发明人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683 ,  H01T23/00

CPC分类号： H01J37/32706 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32935 ,  H01L21/6831

摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.

摘要翻译： 一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理 使用等离子体。 该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率 源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化， 并在气体注射板中异常注入。

公开(公告)号：US07442651B2

公开(公告)日：2008-10-28

申请号：US11354919

申请日：2006-02-16

申请人： Masahito Mori ,  Toshiaki Nishida ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Hideyuki Kazumi ,  Kazutami Tago

发明人： Masahito Mori ,  Toshiaki Nishida ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Hideyuki Kazumi ,  Kazutami Tago

IPC分类号： H91L21/302

CPC分类号： H01L21/32136 ,  H01L21/28123 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/84 ,  H01L22/26 ,  H01L29/66795

摘要： An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.

摘要翻译： 提供一种能够以高选择性对在由高介电常数或“高k”绝缘体制成的电介质材料层上形成的含过渡金属元素的电极材料层进行蚀刻的蚀刻技术。 为此，将工件放置在位于真空处理容器内的下电极上。 工件具有电极材料层的多层结构，其中包含过渡金属元件和由高k绝缘体制成的电介质材料层。 然后，在将真空​​处理容器内的处理气体导入真空处理容器的内部的同时，向真空处理容器的内部施加高频电力，进行等离子体转换，使工件在其表面被蚀刻。 当蚀刻电极材料层时，作为处理气体供给HCl气体。