公开(公告)号：US07402747B2

公开(公告)日：2008-07-22

申请号：US10781355

申请日：2004-02-18

申请人： Shin Sugawara ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

发明人： Shin Sugawara ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

IPC分类号： H01L31/00 ,  H02N6/00 ,  E04B5/48

CPC分类号： H01L31/1804 ,  H01L31/035281 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/072 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： There is disclosed a photoelectric conversion device comprising a substrate 1 serving as a lower electrode; first conductivity-type crystalline semiconductor particles 3 deposited on the substrate; second conductivity-type semiconductor layers 4 formed on the crystalline semiconductor particles 3; an insulator layer 2 formed among the crystalline semiconductor particles; and an upper electrode layer 5 formed on the second conductivity-type semiconductor layers 4, wherein the second conductivity-type semiconductor layers 4 each have a smaller thickness at or below an equator of each of the crystalline semiconductor particles than at a zenith region thereof, and the second conductivity-type semiconductor layers 4 include an impurity element with a concentration gradient decreasing with proximity to the crystalline semiconductor particles.

摘要翻译： 公开了一种光电转换装置，其包括用作下电极的基板1; 沉积在基板上的第一导电型晶体半导体颗粒3; 形成在结晶半导体粒子3上的第二导电型半导体层4; 形成在所述结晶半导体颗粒之间的绝缘体层2; 以及形成在第二导电型半导体层4上的上电极层5，其中第二导电型半导体层4在每个晶体半导体颗粒的赤道处或下方的厚度比在其顶点区域具有更小的厚度， 并且第二导电型半导体层4包括具有随着接近结晶半导体颗粒而减小的浓度梯度的杂质元素。

公开(公告)号：US20050236030A1

公开(公告)日：2005-10-27

申请号：US10998190

申请日：2004-11-24

申请人： Shin Sugawara ,  Hideki Hakuma ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

发明人： Shin Sugawara ,  Hideki Hakuma ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035281 ,  H01L31/03529 ,  H01L31/18 ,  Y02E10/50

摘要： A photoelectric conversion device has a structure in which a plurality of crystalline semiconductor particles (3) of one conductivity type each of which has a semiconductor portion (4) of the opposite conductivity type on its surface are joined to a substrate 1 serving as a lower electrode. The substrate (1) and the semiconductor portion (4) are disposed in a state of being separated by a separation portion (6). An insulator (2) is formed between the adjoining crystalline semiconductor particles (3) so as to cover the surface of the substrate (1) and the lower part of the semiconductor portion (4) and so as to expose the upper part of the semiconductor portion (4). An upper electrode (5) is formed so as to cover the insulator (2) and the upper part of the semiconductor portion (4). A short circuit between the upper electrode (5) and the substrate (1) serving as a lower electrode which is caused by the semiconductor portion (4) can be prevented by providing the separation portion (6). Therefore, the photoelectric conversion device can have high conversion efficiency and high productivity.

摘要翻译： 光电转换装置具有如下结构：其中一个导电类型的多个结晶半导体颗粒（3）在其表面上具有相反导电类型的半导体部分（4）被接合到用作下部的基板1 电极。 基板（1）和半导体部分（4）以分离部分（6）分开的状态设置。 在邻接的结晶半导体颗粒（3）之间形成绝缘体（2），以覆盖基板（1）的表面和半导体部分（4）的下部，以便露出半导体的上部 部分（4）。 上电极（5）形成为覆盖绝缘体（2）和半导体部分（4）的上部。 通过设置分离部（6），能够防止由上述半导体部（4）引起的上部电极（5）与作为下部电极的基板（1）之间的短路。 因此，光电转换装置可以具有高转换效率和高生产率。