公开(公告)号：US20080074564A1

公开(公告)日：2008-03-27

申请号：US11927725

申请日：2007-10-30

申请人： Shin-Ichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

发明人： Shin-Ichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC分类号： G02F1/1335

CPC分类号： G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

摘要： In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

摘要翻译： 在包含蚀刻控制部件的工件（30）中形成精细结构的形成方法中，使用各向同性蚀刻工序，将具有开口（36）的掩模（32,34）施加到工件上，工件为 用蚀刻溶液（38）蚀刻，从而在工件的表面形成对应于开口形状的凹部（40）。 由于在各向同性蚀刻工艺期间蚀刻控制部件在凹陷内的蚀刻溶液中从工件中洗脱出来，停止了工件的蚀刻。

公开(公告)号：US07678454B2

公开(公告)日：2010-03-16

申请号：US11927730

申请日：2007-10-30

申请人： Shin-Ichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

发明人： Shin-Ichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC分类号： B32B17/00

CPC分类号： G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

摘要： In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

摘要翻译： 在包含蚀刻控制部件的工件（30）中形成精细结构的形成方法中，使用各向同性蚀刻工序，将具有开口（36）的掩模（32,34）施加到工件上，工件为 用蚀刻溶液（38）蚀刻，从而在工件的表面形成对应于开口形状的凹部（40）。 由于在各向同性蚀刻工艺期间蚀刻控制部件在凹陷内的蚀刻溶液中从工件中洗脱出来，停止了工件的蚀刻。

公开(公告)号：US07643100B2

公开(公告)日：2010-01-05

申请号：US11927725

申请日：2007-10-30

申请人： Shin-Ichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

发明人： Shin-Ichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC分类号： G02F1/136 ,  G02F1/1335 ,  H01L21/302 ,  H01L21/461 ,  B29D11/00

CPC分类号： G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

摘要： In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

公开(公告)号：US07525732B2

公开(公告)日：2009-04-28

申请号：US11843677

申请日：2007-08-23

申请人： Shin-ichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

发明人： Shin-ichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC分类号： G02B5/08 ,  G02B3/00

CPC分类号： G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

摘要： In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

摘要翻译： 在包含蚀刻控制部件的工件（30）中形成精细结构的形成方法中，使用各向同性蚀刻工序，将具有开口（36）的掩模（32,34）施加到工件上，工件为 用蚀刻溶液（38）蚀刻，从而在工件的表面形成对应于开口形状的凹部（40）。 由于在各向同性蚀刻工艺期间蚀刻控制部件在凹陷内的蚀刻溶液中从工件中洗脱出来，停止了工件的蚀刻。

公开(公告)号：US20080057731A1

公开(公告)日：2008-03-06

申请号：US11927730

申请日：2007-10-30

申请人： Shinichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

发明人： Shinichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

摘要： In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

公开(公告)号：US07329611B2

公开(公告)日：2008-02-12

申请号：US10410254

申请日：2003-04-10

申请人： Shinichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

发明人： Shinichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC分类号： H01L21/302 ,  B29D11/00

CPC分类号： G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

摘要： In a formation method for forming a fine structure in a workpiece containing an etching control component, using an isotropic etching process, a mask having an opening is applied to the workpiece, and the workpiece is etched with an etching solution to thereby form a recess, corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

摘要翻译： 在包含蚀刻控制部件的工件中形成精细结构的形成方法中，使用各向同性蚀刻工序，将具有开口的掩模施加到工件上，用蚀刻溶液蚀刻工件，从而形成凹部， 对应于工件的表面中的开口的形状。 由于在各向同性蚀刻工艺期间蚀刻控制部件在凹陷内的蚀刻溶液中从工件中洗脱出来，停止了工件的蚀刻。

公开(公告)号：US20070291370A1

公开(公告)日：2007-12-20

申请号：US11843677

申请日：2007-08-23

申请人： Shinichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

发明人： Shinichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC分类号： G02B1/00

CPC分类号： G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

摘要： In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

摘要翻译： 在包含蚀刻控制部件的工件（30）中形成精细结构的形成方法中，使用各向同性蚀刻工序，将具有开口（36）的掩模（32,34）施加到工件上，工件为 用蚀刻溶液（38）蚀刻，从而在工件的表面形成对应于开口形状的凹部（40）。 由于在各向同性蚀刻工艺期间蚀刻控制部件在凹陷内的蚀刻溶液中从工件中洗脱出来，停止了工件的蚀刻。

公开(公告)号：US20050024576A1

公开(公告)日：2005-02-03

申请号：US10901206

申请日：2004-07-29

申请人： Yuko Sato ,  Jin Matsushima ,  Mitsuhiro Sugimoto ,  Ken Sumiyoshi

发明人： Yuko Sato ,  Jin Matsushima ,  Mitsuhiro Sugimoto ,  Ken Sumiyoshi

IPC分类号： G02F1/13 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/13363 ,  G02F1/136 ,  G02F1/1368 ,  G03B21/00 ,  G03B21/16 ,  H01L29/786

CPC分类号： G02F1/13363 ,  G02F2203/21 ,  G02F2413/02 ,  G03B21/16

摘要： An LCD device in an LCD projector includes a TFT substrate, a counter substrate, an LC layer sandwiched between the TFT substrate and the counter substrate, and a pair of compensation substrates attached onto the outer surfaces of the TFT substrate and the counter substrate far from the LC layer. The compensation substrate has a negative coefficient of thermal expansion (CTE) for compensating the retardation caused by a temperature rise of the TFT substrate and the counter substrate due to irradiation thereof by a light source.

摘要翻译： LCD投影仪中的LCD装置包括TFT基板，对置基板，夹在TFT基板和对置基板之间的LC层，以及一对补偿基板，其安装在远离TFT基板和对向基板的外部表面上 LC层。 补偿基板具有负的热膨胀系数（CTE），用于补偿由于光源的照射而导致的TFT基板和对置基板的温度升高引起的延迟。

公开(公告)号：US07310127B2

公开(公告)日：2007-12-18

申请号：US10901206

申请日：2004-07-29

申请人： Yuko Sato ,  Jin Matsushima ,  Mitsuhiro Sugimoto ,  Ken Sumiyoshi

发明人： Yuko Sato ,  Jin Matsushima ,  Mitsuhiro Sugimoto ,  Ken Sumiyoshi

IPC分类号： G02F1/1333

CPC分类号： G02F1/13363 ,  G02F2203/21 ,  G02F2413/02 ,  G03B21/16

摘要： An LCD device in an LCD projector includes a TFT substrate, a counter substrate, an LC layer sandwiched between the TFT substrate and the counter substrate, and a pair of compensation substrates attached onto the outer surfaces of the TFT substrate and the counter substrate far from the LC layer. The compensation substrate has a negative coefficient of thermal expansion (CTE) for compensating the retardation caused by a temperature rise of the TFT substrate and the counter substrate due to irradiation thereof by a light source.

摘要翻译： LCD投影仪中的LCD装置包括TFT基板，对置基板，夹在TFT基板和对置基板之间的LC层，以及一对补偿基板，其安装在远离TFT基板和对向基板的外部表面上 LC层。 补偿基板具有负的热膨胀系数（CTE），用于补偿由于光源的照射而导致的TFT基板和对置基板的温度升高引起的延迟。

公开(公告)号：US20100105170A1

公开(公告)日：2010-04-29

申请号：US12588542

申请日：2009-10-19

申请人： Yuko Sato ,  Takehiko Maeda ,  Fumiyoshi Kawashiro

发明人： Yuko Sato ,  Takehiko Maeda ,  Fumiyoshi Kawashiro

IPC分类号： H01L21/78

CPC分类号： H01L21/561 ,  H01L23/3128 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for manufacturing a semiconductor device includes cutting a resin sealing body into a plurality of pieces. The resin sealing body includes a plurality of semiconductor chips mounted on a wiring board, a heat spreader disposed above the plurality of the semiconductor chips, and sealing resin filled between the wiring board and the heat spreader. The cutting the resin sealing body includes shaving the resin sealing body from a side of the heat spreader and shaving the resin sealing body from a side of the wiring board. The method prevents the heat spreader from generation of burrs.

摘要翻译： 一种半导体装置的制造方法，其特征在于，将树脂密封体切断成多片。 树脂密封体包括安装在布线板上的多个半导体芯片，设置在多个半导体芯片上方的散热器以及填充在布线板和散热器之间的密封树脂。 切割树脂密封体包括从散热器一侧剃刮树脂密封体并且从布线板的一侧剃刮树脂密封体。 该方法防止散热器产生毛刺。