摘要:
A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.
摘要:
A pattern size evaluation apparatus comprising an illumination optical system for projecting parallel light rays of a predetermined wavelength on a monitoring area formed on an object, the monitoring area being formed at a position different from a device pattern formed on the object, a light intensity detection optical system for detecting diffracted light from the monitoring area, and a device pattern size evaluation section for evaluating a size of the device pattern based on an intensity of diffracted light from the monitoring area.
摘要:
A resist pattern forming method according to this invention is characterized by forming a resist film to have different thicknesses in one region and the other region in accordance with the pattern size or pattern density of a photomask. The resist pattern forming method according to this invention is characterized by selectively forming a resist film in part of a substrate region by applying a resist in part of the region without applying the resist in the remaining region. The resist pattern forming method according to this invention is characterized by selectively forming a resist film on part of a substrate on the basis of the intensity of exposure light observed at the resist film.
摘要:
An exposure mask includes a transparent substrate having a light shielding pattern and an aperture pattern thereon for transmitting an exposure light and arranged in that any two adjacent apertures of the same pattern size in the aperture pattern are different from each other in the etched depth, wherein a difference between the aperture pattern size and its adjacent light shielding pattern size, and the trench depth in the aperture pattern are determined by a sum of the aperture pattern size and its adjacent light shielding pattern size.
摘要:
A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..
摘要:
An exposure mask comprises a phase shift section including a plurality of opening patterns formed by making openings in part of a shading film provided on a transmissive substrate and digging part of the substrate, and a non-phase shift section including at least one opening pattern. The opening pattern of the non-phase shift section has a dig whose amount of digging has been adjusted according to the amount of digging in the opening patterns of the phase shift section.
摘要:
A control method for an exposure apparatus, in which an exposure amount and a focus value are set in transferring a circuit pattern on a mask onto a resist formed on a wafer by the exposure apparatus, includes the steps of arranging, on the mask, an exposure amount monitor mark and a focus monitor mark used to separately monitor the effective exposure amount and the focus value on the wafer, transferring the exposure amount monitor mark and the focus monitor mark onto the resist to form an exposure amount monitor pattern and a focus monitor pattern, measuring the states of the exposure amount monitor pattern and the focus monitor pattern at least at one of timings after exposure, after post exposure baking, during a cooling process after baking, during a process after cooling, during development, and after development, on the basis of the measurement results, calculating the difference between an optimum exposure amount value and an exposure amount set value set in the exposure apparatus and the difference between an optimum focus value and a focus set value set in the exposure apparatus in transferring the exposure amount monitor mark and the focus monitor mark onto the resist, and changing the focus set value and the exposure amount set value of the exposure apparatus in accordance with the calculated differences.
摘要:
A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..
摘要:
A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..
摘要:
A laser processing apparatus comprises a laser oscillator for producing a laser beam to selectively remove part of a substrate to be processed, a scanning system for applying the laser beam to an arbitrary position of the substrate and incident means for applying the laser beam to the substrate substantially at right angle.