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公开(公告)号：US06511786B2
公开(公告)日：2003-01-28
申请号：US09924093
申请日：2001-08-08
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/108
摘要： A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.
摘要翻译： 本发明的图案形成材料包含含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物和酸产生剂：其中R1和R2相同或不同并选自 烷基，氯原子和含有氯原子的烷基; R3，R4，R5和R6是氢原子或氟原子，其中至少一个是氟原子; 而R7是由酸释放的保护基。
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公开(公告)号：US06753132B2
公开(公告)日：2004-06-22
申请号：US10034366
申请日：2002-01-03
IPC分类号： G03F700
CPC分类号： G03F7/0392 , G03F7/0046 , Y10S430/108 , Y10S430/168
摘要： A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: Chemical Formula 1: Chemical Formula 2: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要翻译： 通过在基板上涂布含有由化学式1表示的第一单元和化学式2表示的第二单元的聚合物的图案形成材料和酸产生剂，形成抗蚀剂膜：化学式1：化学式2 其中R1和R2相同或不同，选自烷基，氯原子和含氟原子的烷基; R3是由酸释放的保护基; m为0〜5的整数。接着，对曝光后的光的波长短于180nm的曝光光照射抗蚀剂膜，通过在图案曝光后使抗蚀剂膜显影而形成抗蚀剂图案。
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公开(公告)号：US06689536B2
公开(公告)日：2004-02-10
申请号：US10033899
申请日：2002-01-03
IPC分类号： G03C1492
CPC分类号： G03F7/0046 , G03F7/0392
摘要： A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R3 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R2 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要翻译： 通过在基板上涂布含有由化学式1表示的第一单元的聚合物和由化学式2表示的第二单元的聚合物形成抗蚀剂膜，其中R1和R3相同 或不同，选自烷基，氯原子和含氟原子的烷基; R2是由酸释放的保护基; m为0〜5的整数。接着，利用曝光时间短于180nm波长的曝光光照射抗蚀剂膜，通过在图案曝光后使抗蚀剂膜显影而形成抗蚀剂图案。
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公开(公告)号：US06645694B2
公开(公告)日：2003-11-11
申请号：US09922638
申请日：2001-08-07
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0392 , Y10S430/106
摘要： A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.
摘要翻译： 本发明的图案形成材料包含含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物和酸产生剂：其中R 1和R 2相同或不同， 选自烷基，氯原子和包含氯原子的烷基; R 3，R 4，R 5和R 6是氢原子或氟原子，其中至少一个是氟原子; R 7是被酸释放的保护基。
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公开(公告)号：US06576398B2
公开(公告)日：2003-06-10
申请号：US09799068
申请日：2001-03-06
IPC分类号： G03C173
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/146
摘要： In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; and R3 is a protecting group released by an acid. Then, the resist film is irradiated with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要翻译： 在本发明的图案形成方法中，通过在基板上涂布含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物的图案形成材料形成抗蚀剂膜， 发电机，其中R1和R2相同或不同，选自烷基，氯原子和包括氯原子的烷基; R3是由酸释放的保护基。 然后，用曝光的1nm至30nm波长或110nm至180nm波段的曝光光照射抗蚀剂膜，以进行图案曝光，并且在图案曝光后通过显影抗蚀剂膜形成抗蚀剂图案。
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公开(公告)号：US06737213B2
公开(公告)日：2004-05-18
申请号：US09799017
申请日：2001-03-06
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/146
摘要： In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; and R3 is a protecting group released by an acid. Then, the resist film is irradiated with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要翻译： 在本发明的图案形成方法中，通过在基板上涂布含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物的图案形成材料形成抗蚀剂膜， 发电机，其中R1和R2相同或不同，选自烷基，氯原子和包括氯原子的烷基; R3是由酸释放的保护基。 然后，用曝光的1nm至30nm波长或110nm至180nm波段的曝光光照射抗蚀剂膜，以进行图案曝光，并且在图案曝光后通过显影抗蚀剂膜形成抗蚀剂图案。
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7.发明申请Sulfonamide compound, polymer compound, resist material and pattern formation method 有权磺酰胺化合物，高分子化合物，抗蚀剂材料和图案形成方法公开(公告)号：US20070099117A1
公开(公告)日：2007-05-03
申请号：US11641654
申请日：2006-12-20
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： G03C1/00
CPC分类号： C08F220/18 , C08F212/02 , C08F228/02 , G03F7/0046 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/111
摘要： A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
摘要翻译： 抗蚀剂材料的基础聚合物包括由以下化学式3的通式表示的单元：其中R 1，R 2和R 3， SUP>相同或不同，为氢原子，氟原子，直链烷基，支链或环状烷基或碳数不少于1的氟化烷基; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5和R 6相同或不同，为氢原子，直链烷基，支链或环状烷基，氟化烷基与 碳数为1以上且20以下，或被酸释放的保护基。
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公开(公告)号：US07169869B2
公开(公告)日：2007-01-30
申请号：US11179606
申请日：2005-07-13
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Michitaka Ootani , Haruhiko Komoriya
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Michitaka Ootani , Haruhiko Komoriya
IPC分类号： C08F12/30
CPC分类号： C08F28/02 , G03F7/0046 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
摘要翻译： 包含具有氟化亲水基团的乙烯基磺酸酯单元作为基础树脂的聚合物的抗蚀剂组合物具有优异的透明性，底物粘合性和显影剂渗透性以及耐等离子体耐蚀刻性，并且适用于光刻微处理。
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公开(公告)号：US07067231B2
公开(公告)日：2006-06-27
申请号：US10968971
申请日：2004-10-21
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Haruhiko Komoriya , Kazuhiro Yamanaka
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Haruhiko Komoriya , Kazuhiro Yamanaka
CPC分类号： G03F7/0046 , C08F220/24 , G03F7/0397 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A polymer comprising recurring units having a partial structure of formula (1) wherein R1 is a single bond or alkylene or fluoroalkylene, R2 and R3 are H or alkyl or fluoroalkyl, at least one of R2 and R3 contains at least one fluorine atom is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance
摘要翻译： 包含具有式（1）的部分结构的重复单元的聚合物，其中R 1是单键或亚烷基或氟代亚烷基，R 2和R 3， SUP>是H或烷基或氟代烷基，R 2和R 3中的至少一个含有至少一个氟原子用作基础树脂以配制抗蚀剂组合物，其中 具有波长高达200nm的辐射的高透明度，底物粘附性，显影剂亲和性和耐干蚀刻性的优点
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公开(公告)号：US20050277057A1
公开(公告)日：2005-12-15
申请号：US11138880
申请日：2005-05-27
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
CPC分类号： G03F7/0392 , G03F7/0397
摘要： A resist material has a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2: wherein R1, R2, R3, R7, R8 and R9 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
摘要翻译： 抗蚀剂材料具有含有包含由以下化学式1的通式表示的第一单元与由下列化学式2的通式表示的第二单元的共聚物的化合物的基础聚合物：其中R 1 R 2，R 3，R 3，R 7，R 8和R 9， 相同或不同，为氢原子，氟原子或直链烷基，支链或环状烷基或碳数不小于1且不大于1的氟化烷基 20; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5和R 6相同或不同，为氢原子，直链烷基，支链或环状烷基或氟化烷基， 碳数为1以上且20以下，或被酸释放的保护基。
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