摘要:
A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.
摘要:
A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: Chemical Formula 1: Chemical Formula 2: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要:
A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R3 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R2 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要:
A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.
摘要翻译:本发明的图案形成材料包含含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物和酸产生剂:其中R 1和R 2相同或不同, 选自烷基,氯原子和包含氯原子的烷基; R 3,R 4,R 5和R 6是氢原子或氟原子,其中至少一个是氟原子; R 7是被酸释放的保护基。
摘要:
A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
摘要翻译:抗蚀剂材料的基础聚合物包括由以下化学式3的通式表示的单元:其中R 1,R 2和R 3, SUP>相同或不同,为氢原子,氟原子,直链烷基,支链或环状烷基或碳数不少于1的氟化烷基; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5和R 6相同或不同,为氢原子,直链烷基,支链或环状烷基,氟化烷基与 碳数为1以上且20以下,或被酸释放的保护基。
摘要:
A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
摘要:
A polymer comprising recurring units having a partial structure of formula (1) wherein R1 is a single bond or alkylene or fluoroalkylene, R2 and R3 are H or alkyl or fluoroalkyl, at least one of R2 and R3 contains at least one fluorine atom is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance
摘要:
A resist material has a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2: wherein R1, R2, R3, R7, R8 and R9 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
摘要翻译:抗蚀剂材料具有含有包含由以下化学式1的通式表示的第一单元与由下列化学式2的通式表示的第二单元的共聚物的化合物的基础聚合物:其中R 1 R 2,R 3,R 3,R 7,R 8和R 9, 相同或不同,为氢原子,氟原子或直链烷基,支链或环状烷基或碳数不小于1且不大于1的氟化烷基 20; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5和R 6相同或不同,为氢原子,直链烷基,支链或环状烷基或氟化烷基, 碳数为1以上且20以下,或被酸释放的保护基。
摘要:
A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
摘要:
A chemically amplified resist composition comprising an alternating copolymer of an acrylate monomer having a fluoroalkyl group at alpha-position with a norbornene derivative, when processed through ArF excimer laser exposure by lithography, is improved in resolution and dry etching resistance and minimized in line edge roughness.