利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.03 秒)

    Apparatus for manufacturing semiconductor wafer
    2.
    发明授权
    Apparatus for manufacturing semiconductor wafer 失效
    半导体晶片制造装置

    公开(公告)号：US06578589B1

    公开(公告)日：2003-06-17

    申请号：US09937525

    申请日：2001-09-24

    申请人： Masanori Mayusumi ,  Masato Imai ,  Kazutoshi Inoue ,  Shinji Nakahara ,  Shintoshi Gima

    发明人： Masanori Mayusumi ,  Masato Imai ,  Kazutoshi Inoue ,  Shinji Nakahara ,  Shintoshi Gima

    IPC分类号： B08B704

    CPC分类号： H01L21/67115 ,  H01L21/67034 ,  H01L21/6704 ,  Y10S134/902

    摘要： Disclosed is a compact apparatus for manufacturing semiconductor wafers, which is aimed at complete removing of moisture from the wafers after final cleaning while reducing the manufacturing time. The apparatus includes a cleaning chamber (1) for final cleaning, a storage chamber (3) for storing wafers, a transfer chamber (2) communicating with the both cleaning and storage chambers (1, 3), and formed in its upper wall with a heat-conducting window (7), a robot hand (5) and a robot arm (4) for transporting the wafer (W) from the cleaning chamber (1) to the storage chamber (3) within the transfer chamber, infrared lamps (6) arranged to face the window (7) outside the transfer chamber (2) so as to heat the wafer (W) in the course of transportation within the transfer chamber, gas supply ports (8) for producing a laminar flow of inert gas from the storage chamber (3) to the cleaning chamber (1) to expose wafers (W) with the gas, and exhaust ports (9) for exhausting the moisture removed from wafers.

    摘要翻译： 公开了一种用于制造半导体晶片的紧凑装置，其目的是在最终清洁之后从晶片完全除去水分，同时减少制造时间。 该设备包括用于最终清洁的清洁室（1），用于存储晶片的储存室（3），与清洁和储存室（1,3）连通的传送室（2），并在其上壁形成 传导窗（7），机器人手（5）和用于将晶片（W）从清洁室（1）传送到传送室内的储存室（3）的机械臂（4），红外灯 （6），布置成面对转移室（2）外部的窗口（7），以在输送室内的运输过程中加热晶片（W），用于产生惰性层流的气体供给口（8） 从储存室（3）到清洁室（1）的气体，以便与气体一起露出晶片（W），以及用于排出从晶片去除的水分的排气口（9）。

    Epitaxial growth furnace
    3.
    发明授权
    Epitaxial growth furnace 失效
    外延生长炉

    公开(公告)号：US06262393B1

    公开(公告)日：2001-07-17

    申请号：US09554231

    申请日：2000-10-16

    申请人： Masato Imai ,  Masanori Mayusumi ,  Shinji Nakahara ,  Kazutoshi Inoue

    发明人： Masato Imai ,  Masanori Mayusumi ,  Shinji Nakahara ,  Kazutoshi Inoue

    IPC分类号： F27B514

    CPC分类号： C30B25/08 ,  C23C16/458 ,  C23C16/481

    摘要： An epitaxial growth furnace comprising first and second partition walls arranged within a reaction chamber, a first separate space surrounded by the partition walls and the inner wall surface of the reaction chamber, a second separate space partitioned by the partition walls so as to be isolated from the inner wall surface of the reaction chamber, a holding mechanism adapted to hold a pair of semiconductor wafers respectively on the first and second partition walls so that the principal surfaces of the pair of wafers face each other with spacing therebetween and are also exposed to the second separate space, and a pair of heaters for respectively irradiating radiant heat to the back surfaces of the two wafers.

    摘要翻译： 一种外延生长炉，包括布置在反应室内的第一和第二分隔壁，由分隔壁和反应室的内壁表面围绕的第一分离空间，由分隔壁隔开的第二分离空间， 反应室的内壁表面，保持机构，其适于将一对半导体晶片分别保持在第一和第二分隔壁上，使得该对晶片的主表面彼此间隔开，并且还暴露于 第二分离空间和用于分别向两个晶片的背面照射辐射热的一对加热器。

    Method of manufacturing semiconductor wafer
    4.
    发明授权
    Method of manufacturing semiconductor wafer 失效
    制造半导体晶片的方法

    公开(公告)号：US06323140B1

    公开(公告)日：2001-11-27

    申请号：US09646718

    申请日：2001-02-26

    申请人： Masanori Mayusumi ,  Masato Imai ,  Kazutoshi Inoue ,  Shinji Nakahara

    发明人： Masanori Mayusumi ,  Masato Imai ,  Kazutoshi Inoue ,  Shinji Nakahara

    IPC分类号： H01L2131

    CPC分类号： C30B29/06 ,  C30B25/02 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  Y10S438/906

    摘要： Disclosed is a method for manufacturing a semiconductor wafer having an epitxial layer on a surface thereof, by the steps of forming a pritective oxide film on a surface of a semiconductor wafer prior to loading of the wafer into an eptaxial growth furnace, removing the protective oxide film formed on the surface of the wafer by heating after the wafer is loaded in the furnace, and performing epitaxial growth of the epitaxial layer on the surface from which the protective oxide film is removed in the furnace. The protective oxide film is removed by heating the wafer in the furnace in an ambience of hydrogen gas at a pressure ranging from 0.0133×105 Pa to 1.013×105 Pa and at a temperature ranging from 800° C. to 1,000 ° C., or by heating the wafer in the furnace at a pressure of 5×106 Pa or under and at a temperature ranging from 800° C. to 1,000° C.

    摘要翻译： 本发明公开了一种在其表面上具有外延层的半导体晶片的制造方法，其特征在于，在将晶片装入轴向生长炉之前，在半导体晶片的表面形成保护性氧化膜，除去保护氧化物 在晶片装载到炉中之后通过加热在晶片的表面上形成的膜，并且在炉中除去保护性氧化物膜的表面上进行外延层的外延生长。 通过在氢气气氛中在0.0133×10 5 Pa〜1.013×10 5 Pa的压力范围内，在800〜1000℃的温度范围内加热炉内的晶片，或者通过加热来除去保护性氧化膜 炉中的晶片在5×10 6 Pa的压力下或在800℃至1000℃的温度下。

    Method and apparatus for producing epitaxial wafer
    5.
    发明授权
    Method and apparatus for producing epitaxial wafer 失效
    用于生产外延晶片的方法和设备

    公开(公告)号：US06245152B1

    公开(公告)日：2001-06-12

    申请号：US08885904

    申请日：1997-06-30

    申请人： Masato Imai ,  Masanori Mayusumi ,  Shinji Nakahara ,  Kazutoshi Inoue

    发明人： Masato Imai ,  Masanori Mayusumi ,  Shinji Nakahara ,  Kazutoshi Inoue

    IPC分类号： C23C1600

    CPC分类号： C30B25/12 ,  C30B25/02 ,  C30B25/08

    摘要： A method and apparatus for forming an epitaxial layer on a semiconductor wafer supported on a suscepter in an epitaxial growth furnace. Ther wafer to be processed is placed on the suscepter outside the furnace. The suscepter carrying the wafer is transferred into the furnace from the outside thereof and mounted in a loading position within the furnace. An epitaxial growth process is then performed on the wafer on the suscepter mounted in the loading position. After the completion of the growth process, the suscepter carrying the wafer thereon is removed from the furnace loading position and transferred to the outside of the furnace.

    摘要翻译： 一种用于在外延生长炉中支撑在一个可变体上的半导体晶片上形成外延层的方法和装置。 待处理的晶片被放置在熔炉外部的火焰探测器上。 承载晶片的容器从外部被转移到炉中并安装在炉内的装载位置。 然后在安装在装载位置上的夹持器上的晶片上执行外延生长工艺。 在生长过程完成之后，携带其上的晶片的容器从炉装载位置移除并转移到炉外。

    STEREOSCOPIC IMAGE DISPLAYING APPARATUS
    6.
    发明申请
    STEREOSCOPIC IMAGE DISPLAYING APPARATUS 有权
    立体图像显示装置

    公开(公告)号：US20110043715A1

    公开(公告)日：2011-02-24

    申请号：US12854344

    申请日：2010-08-11

    申请人： Tsuyoshi Ohyama ,  Masato Imai ,  Tsutomu Tanaka

    发明人： Tsuyoshi Ohyama ,  Masato Imai ,  Tsutomu Tanaka

    IPC分类号： G02F1/1343 ,  G02B27/22

    CPC分类号： G02B27/2214 ,  G02F1/134309 ,  H04N13/315 ,  H04N13/317 ,  H04N13/356

    摘要： A stereoscopic image displaying apparatus is provided. The stereoscopic image displaying apparatus, including: an image generation section having a plurality of pixels for a plurality of colors arranged in a two-dimensional matrix and adapted to drive the pixels for the colors to generate a color image; and a parallax applying section adapted to apply a parallax to the image to allow color display of a three-dimensional image and capable of changing over a parallax direction between a first direction of the color image and a second direction perpendicular to the first direction. The parallax applying section has a first parallel state and a second parallel state. The image generation section and the parallax application section are configured so that the rates of the colors at the pixels for the colors corresponding to light transmission regions between adjacent ones of the parallax barrier regions are uniform or got closer in both of the parallel states.

    摘要翻译： 提供立体图像显示装置。 所述立体图像显示装置包括：图像生成部，具有以二维矩阵排列的多种颜色的多个像素，适于驱动所述颜色的像素，生成彩色图像; 以及视差施加部，其适于对所述图像施加视差，以允许三维图像的彩色显示，并且能够在所述彩色图像的第一方向和垂直于所述第一方向的第二方向之间的视差方向上变化。 视差施加部具有第一平行状态和第二平行状态。 图像生成部和视差施加部被配置为使得与相邻的视差屏障区域中的光透射区域对应的颜色的像素的颜色的速率在两个并行状态下均匀或更接近。

    Vehicle Speed Control System
    9.
    发明申请
    Vehicle Speed Control System 有权
    车速控制系统

    公开(公告)号：US20090088941A1

    公开(公告)日：2009-04-02

    申请号：US12194767

    申请日：2008-08-20

    申请人： Kazutoshi TSUCHIYA ,  Masato Imai ,  Hiroshi Sakamoto ,  Takaomi Nishigaito ,  Mikio Ueyama

    发明人： Kazutoshi TSUCHIYA ,  Masato Imai ,  Hiroshi Sakamoto ,  Takaomi Nishigaito ,  Mikio Ueyama

    IPC分类号： B60K31/00 ,  B60Q1/00

    CPC分类号： B60W30/16 ,  B60K31/0075 ,  B60K31/0083 ,  B60W2520/125 ,  B60W2520/14 ,  B60W2550/143 ,  B60W2550/402 ,  B60W2720/106

    摘要： A vehicle speed control system includes a road shape recognition unit which recognizes a road shape, a target speed setting unit which sets a target speed according to the road shape, a speed control unit which controls the host vehicle's speed according to the target speed, a parameter detecting unit which detects at least one of parameters representing the driver's steering rotation, a yaw rate of the host vehicle, and a lateral acceleration of the host vehicle, and a first acceleration determining unit which, after the speed control unit has decelerated, determines whether or not to accelerate the host vehicle according to reference parameters based on a road shape and the host vehicle's speed and parameters detected by the parameter detecting unit, wherein if the first acceleration determining unit has determined to accelerate, the target speed setting unit sets a target speed of the host vehicle according to a predetermined acceleration.

    摘要翻译： 车速控制系统包括识别道路形状的道路形状识别单元，根据道路形状设定目标速度的目标速度设定单元，根据目标速度来控制本车辆速度的速度控制单元， 参数检测单元，其检测表示所述驾驶员的转向旋转，所述主车辆的偏航率，所述主车辆的横向加速度的参数中的至少一个以及所述速度控制单元减速后的第一加速度判定单元， 是否根据参考参数根据道路形状和本车辆的速度和参数检测单元检测到的参数加速本车辆，其中如果第一加速度确定单元已经确定加速，则目标速度设定单元设定 根据预定加速度，本车辆的目标速度。

    Cruise Control System for a Vehicle
    10.
    发明申请
    Cruise Control System for a Vehicle 有权
    车辆巡航控制系统

    公开(公告)号：US20080091327A1

    公开(公告)日：2008-04-17

    申请号：US11867192

    申请日：2007-10-04

    申请人： Kazutoshi Tsuchiya ,  Hiroshi Sakamoto ,  Masato Imai ,  Tatsuya Ochi ,  Takaomi Nishigaito ,  Masao Sakata ,  Masafumi Naito

    发明人： Kazutoshi Tsuchiya ,  Hiroshi Sakamoto ,  Masato Imai ,  Tatsuya Ochi ,  Takaomi Nishigaito ,  Masao Sakata ,  Masafumi Naito

    IPC分类号： B60W30/14 ,  G06F17/00

    CPC分类号： B60K31/0066 ,  B60W2520/14 ,  B60W2550/402 ,  G01C21/30 ,  G06K9/00798

    摘要： This invention provides a vehicle cruise control system which, during recognition of a shape of a road extending in a frontward direction of host vehicle, can calculate the road shape rapidly and accurately from a positional relationship with respect to the host vehicle. The system includes at least: a position change detector that detects, from information on the road existing in the frontward direction of the vehicle, a horizontal distance from a line segment orthogonal to a traveling direction vector of the vehicle, to a centerline of the road, the detection being conducted at a plurality of measuring points in an extending direction of the traveling direction vector; a road shape recognizer that identifies the shape of the road from data relating to linearity of changes in each of the horizontal distances, the linearity data being obtained by the position change detector; and a cruise controller that controls traveling of the vehicle according to results of the identification by the road shape recognizer.

    摘要翻译： 本发明提供一种车辆巡航控制系统，在识别到在主车辆的向前方向上延伸的道路的形状时，能够从相对于本车辆的位置关系快速，准确地计算道路形状。 该系统至少包括：位置变化检测器，其从车辆前方存在的道路上的信息中检测出与从车辆的行进方向矢量正交的线段的水平距离到道路的中心线 检测在行进方向矢量的延伸方向上的多个测量点进行; 路线形状识别器，其通过与位置变化检测器得到的线性数据相关的水平距离各变化的线性度的数据来识别道路的形状; 以及巡航控制器，其根据道路形状识别器的识别结果来控制车辆的行驶。