公开(公告)号：US06863735B1

公开(公告)日：2005-03-08

申请号：US09744363

申请日：1999-07-26

申请人： Shinji Nakahara ,  Masato Imai ,  Masanori Mayusumi ,  Kazutoshi Inoue ,  Shintoshi Gima

发明人： Shinji Nakahara ,  Masato Imai ,  Masanori Mayusumi ,  Kazutoshi Inoue ,  Shintoshi Gima

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C30B25/08 ,  C30B25/12 ,  H01L21/205 ,  H01L21/67 ,  C23C16/00 ,  B65G49/07 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45504 ,  C23C16/4585 ,  C23C16/4588 ,  C30B25/08 ,  C30B25/12 ,  Y10S414/135 ,  Y10S414/141

摘要： An epitaxial growth furnace is provided for effecting the formation of an epitaxial layer on the surface of a semiconductor wafer by CVD in a reaction chamber of the furnace. The furnace comprises a wafer holder having an opening for exposing a surface area of the wafer which is subject to epitaxial growth, an opening flange adapted for engagement with a chamfered tapered face of a whole peripheral edge of the wafer on the side of said surface area thereof, and a plurality of jaws for detachably engaging with an outer periphery of the wafer on a back surface side of said surface area.

摘要翻译： 提供外延生长炉，用于在炉的反应室中通过CVD在半导体晶片的表面上形成外延层。 炉包括具有用于暴露待外延生长的晶片的表面区域的开口的晶片保持器，适于与所述晶片的在所述表面区域侧的整个周缘的倒角锥形表面接合的开口凸缘 以及多个钳口，用于在所述表面区域的背面侧可拆卸地与晶片的外周接合。

公开(公告)号：US06578589B1

公开(公告)日：2003-06-17

申请号：US09937525

申请日：2001-09-24

申请人： Masanori Mayusumi ,  Masato Imai ,  Kazutoshi Inoue ,  Shinji Nakahara ,  Shintoshi Gima

发明人： Masanori Mayusumi ,  Masato Imai ,  Kazutoshi Inoue ,  Shinji Nakahara ,  Shintoshi Gima

IPC分类号： B08B704

CPC分类号： H01L21/67115 ,  H01L21/67034 ,  H01L21/6704 ,  Y10S134/902

摘要： Disclosed is a compact apparatus for manufacturing semiconductor wafers, which is aimed at complete removing of moisture from the wafers after final cleaning while reducing the manufacturing time. The apparatus includes a cleaning chamber (1) for final cleaning, a storage chamber (3) for storing wafers, a transfer chamber (2) communicating with the both cleaning and storage chambers (1, 3), and formed in its upper wall with a heat-conducting window (7), a robot hand (5) and a robot arm (4) for transporting the wafer (W) from the cleaning chamber (1) to the storage chamber (3) within the transfer chamber, infrared lamps (6) arranged to face the window (7) outside the transfer chamber (2) so as to heat the wafer (W) in the course of transportation within the transfer chamber, gas supply ports (8) for producing a laminar flow of inert gas from the storage chamber (3) to the cleaning chamber (1) to expose wafers (W) with the gas, and exhaust ports (9) for exhausting the moisture removed from wafers.

摘要翻译： 公开了一种用于制造半导体晶片的紧凑装置，其目的是在最终清洁之后从晶片完全除去水分，同时减少制造时间。 该设备包括用于最终清洁的清洁室（1），用于存储晶片的储存室（3），与清洁和储存室（1,3）连通的传送室（2），并在其上壁形成 传导窗（7），机器人手（5）和用于将晶片（W）从清洁室（1）传送到传送室内的储存室（3）的机械臂（4），红外灯 （6），布置成面对转移室（2）外部的窗口（7），以在输送室内的运输过程中加热晶片（W），用于产生惰性层流的气体供给口（8） 从储存室（3）到清洁室（1）的气体，以便与气体一起露出晶片（W），以及用于排出从晶片去除的水分的排气口（9）。

公开(公告)号：US06262393B1

公开(公告)日：2001-07-17

申请号：US09554231

申请日：2000-10-16

申请人： Masato Imai ,  Masanori Mayusumi ,  Shinji Nakahara ,  Kazutoshi Inoue

发明人： Masato Imai ,  Masanori Mayusumi ,  Shinji Nakahara ,  Kazutoshi Inoue

IPC分类号： F27B514

CPC分类号： C30B25/08 ,  C23C16/458 ,  C23C16/481

摘要： An epitaxial growth furnace comprising first and second partition walls arranged within a reaction chamber, a first separate space surrounded by the partition walls and the inner wall surface of the reaction chamber, a second separate space partitioned by the partition walls so as to be isolated from the inner wall surface of the reaction chamber, a holding mechanism adapted to hold a pair of semiconductor wafers respectively on the first and second partition walls so that the principal surfaces of the pair of wafers face each other with spacing therebetween and are also exposed to the second separate space, and a pair of heaters for respectively irradiating radiant heat to the back surfaces of the two wafers.

摘要翻译： 一种外延生长炉，包括布置在反应室内的第一和第二分隔壁，由分隔壁和反应室的内壁表面围绕的第一分离空间，由分隔壁隔开的第二分离空间， 反应室的内壁表面，保持机构，其适于将一对半导体晶片分别保持在第一和第二分隔壁上，使得该对晶片的主表面彼此间隔开，并且还暴露于 第二分离空间和用于分别向两个晶片的背面照射辐射热的一对加热器。

公开(公告)号：US06323140B1

公开(公告)日：2001-11-27

申请号：US09646718

申请日：2001-02-26

申请人： Masanori Mayusumi ,  Masato Imai ,  Kazutoshi Inoue ,  Shinji Nakahara

发明人： Masanori Mayusumi ,  Masato Imai ,  Kazutoshi Inoue ,  Shinji Nakahara

IPC分类号： H01L2131

CPC分类号： C30B29/06 ,  C30B25/02 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  Y10S438/906

摘要： Disclosed is a method for manufacturing a semiconductor wafer having an epitxial layer on a surface thereof, by the steps of forming a pritective oxide film on a surface of a semiconductor wafer prior to loading of the wafer into an eptaxial growth furnace, removing the protective oxide film formed on the surface of the wafer by heating after the wafer is loaded in the furnace, and performing epitaxial growth of the epitaxial layer on the surface from which the protective oxide film is removed in the furnace. The protective oxide film is removed by heating the wafer in the furnace in an ambience of hydrogen gas at a pressure ranging from 0.0133×105 Pa to 1.013×105 Pa and at a temperature ranging from 800° C. to 1,000 ° C., or by heating the wafer in the furnace at a pressure of 5×106 Pa or under and at a temperature ranging from 800° C. to 1,000° C.

摘要翻译： 本发明公开了一种在其表面上具有外延层的半导体晶片的制造方法，其特征在于，在将晶片装入轴向生长炉之前，在半导体晶片的表面形成保护性氧化膜，除去保护氧化物 在晶片装载到炉中之后通过加热在晶片的表面上形成的膜，并且在炉中除去保护性氧化物膜的表面上进行外延层的外延生长。 通过在氢气气氛中在0.0133×10 5 Pa〜1.013×10 5 Pa的压力范围内，在800〜1000℃的温度范围内加热炉内的晶片，或者通过加热来除去保护性氧化膜 炉中的晶片在5×10 6 Pa的压力下或在800℃至1000℃的温度下。

公开(公告)号：US06245152B1

公开(公告)日：2001-06-12

申请号：US08885904

申请日：1997-06-30

申请人： Masato Imai ,  Masanori Mayusumi ,  Shinji Nakahara ,  Kazutoshi Inoue

发明人： Masato Imai ,  Masanori Mayusumi ,  Shinji Nakahara ,  Kazutoshi Inoue

IPC分类号： C23C1600

CPC分类号： C30B25/12 ,  C30B25/02 ,  C30B25/08

摘要： A method and apparatus for forming an epitaxial layer on a semiconductor wafer supported on a suscepter in an epitaxial growth furnace. Ther wafer to be processed is placed on the suscepter outside the furnace. The suscepter carrying the wafer is transferred into the furnace from the outside thereof and mounted in a loading position within the furnace. An epitaxial growth process is then performed on the wafer on the suscepter mounted in the loading position. After the completion of the growth process, the suscepter carrying the wafer thereon is removed from the furnace loading position and transferred to the outside of the furnace.

摘要翻译： 一种用于在外延生长炉中支撑在一个可变体上的半导体晶片上形成外延层的方法和装置。 待处理的晶片被放置在熔炉外部的火焰探测器上。 承载晶片的容器从外部被转移到炉中并安装在炉内的装载位置。 然后在安装在装载位置上的夹持器上的晶片上执行外延生长工艺。 在生长过程完成之后，携带其上的晶片的容器从炉装载位置移除并转移到炉外。

公开(公告)号：US07989073B2

公开(公告)日：2011-08-02

申请号：US11850591

申请日：2007-09-05

申请人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

发明人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

IPC分类号： B32B9/00

CPC分类号： H01L21/02634 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L22/00 ,  H01L29/045 ,  H01L29/32 ,  H01L2924/0002 ,  Y10S117/902 ,  H01L2924/00

摘要： An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a orientation parallel to the {110} plane toward a direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100 } wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer.

摘要翻译： 提供了一种外延硅晶片，其中外延层生长在具有从作为主表面的硅单晶的{110}面倾斜的平面的硅晶片上。 在用于在其上生长外延层的硅晶片中，从平行于{110}平面朝向<110>面的<100>取向测量，{110}面的倾斜角方位角在0至45度的范围内， 方向。 通过这样的布置，可以从具有高于{100}晶片的载流子迁移率（包括空穴和电子迁移率）的{110}晶片测量100nm或更小的LPD。 此外，可以抑制{110}晶片中的表面粗糙度劣化。 此外，可以测量{110}晶片的表面状态。 此外，可以对{110}晶片进行质量评估。

公开(公告)号：US20110031592A1

公开(公告)日：2011-02-10

申请号：US12988156

申请日：2009-04-17

申请人： Masayuki Ishibashi ,  Shinji Nakahara ,  Tetsuro Iwashita

发明人： Masayuki Ishibashi ,  Shinji Nakahara ,  Tetsuro Iwashita

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/30625 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02609

摘要： Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode).

摘要翻译： 公开了具有良好雾度水平的晶片，尽管晶片中{110}面的倾斜角小。 还公开了一种用于制造硅外延晶片的方法，其包括以下步骤：在具有偏离角小于1度的{110}面的主表面的硅单晶衬底上生长外延层; 并抛光外延层的表面，直到外延层的表面具有0.18ppm或更小的雾度水平（在DWO模式下由SP2测量）。

公开(公告)号：US20110239931A1

公开(公告)日：2011-10-06

申请号：US13164511

申请日：2011-06-20

申请人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

发明人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

IPC分类号： C30B25/20

CPC分类号： H01L21/02634 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L22/00 ,  H01L29/045 ,  H01L29/32 ,  H01L2924/0002 ,  Y10S117/902 ,  H01L2924/00

摘要： An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a orientation parallel to the {110} plane toward a direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100} wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer.

摘要翻译： 提供了一种外延硅晶片，其中外延层生长在具有从作为主表面的硅单晶的{110}面倾斜的平面的硅晶片上。 在用于在其上生长外延层的硅晶片中，从平行于{110}平面朝向<100>的<100>取向测量，{110}面的倾斜角方位角在0至45度的范围内， 方向。 通过这样的布置，可以从具有高于{100}晶片的载流子迁移率（包括空穴和电子迁移率）的{110}晶片测量100nm或更小的LPD。 此外，可以抑制{110}晶片中的表面粗糙度劣化。 此外，可以测量{110}晶片的表面状态。 此外，可以对{110}晶片进行质量评估。

公开(公告)号：US08518848B2

公开(公告)日：2013-08-27

申请号：US13408770

申请日：2012-02-29

申请人： Noboru Taniguchi ,  Shuzo Tokumitsu ,  Tomohiro Kuroha ,  Kenichi Tokuhiro ,  Akio Nakashima ,  Keita Kobayashi ,  Shinji Nakahara

发明人： Noboru Taniguchi ,  Shuzo Tokumitsu ,  Tomohiro Kuroha ,  Kenichi Tokuhiro ,  Akio Nakashima ,  Keita Kobayashi ,  Shinji Nakahara

IPC分类号： B01J27/06 ,  B01J23/00 ,  C01G23/047

CPC分类号： A61L9/18 ,  B01J21/063 ,  B01J27/135 ,  B01J35/004 ,  B01J35/1019 ,  B01J37/26 ,  C01G23/00 ,  C01G23/047 ,  C01P2002/54 ,  C01P2006/12

摘要： A titanium oxide photocatalyst that is capable of improving a decomposition rate, and a method for producing the same are provided. The titanium oxide photocatalyst of the present invention is a titanium oxide photocatalyst containing at least an anatase-type titanium oxide and fluorine, wherein a content of the fluorine is 2.5 wt % to 3.5 wt %, and 90 wt % or more of the fluorine is chemically bonded to the anatase-type titanium oxide.

摘要翻译： 提供能够提高分解率的氧化钛光催化剂及其制造方法。 本发明的氧化钛光催化剂是至少含有锐钛矿型氧化钛和氟的氧化钛光催化剂，其中氟的含量为2.5重量％〜3.5重量％，氟的90重量％以上为 化学键合到锐钛矿型氧化钛。

公开(公告)号：US20080057324A1

公开(公告)日：2008-03-06

申请号：US11850599

申请日：2007-09-05

申请人： Shinji Nakahara ,  Masato Sakai ,  Takayuki Dohi

发明人： Shinji Nakahara ,  Masato Sakai ,  Takayuki Dohi

IPC分类号： B32B9/04 ,  C30B29/10

CPC分类号： C30B25/20 ,  C30B23/02 ,  C30B25/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/02024 ,  H01L21/76814

摘要： A method of producing an epitaxial wafer, comprising: performing epitaxial growth of silicon on a main surface of a wafer made of a silicon single crystal; performing surface flattening pretreatment of a main surface of the wafer using a treatment liquid of a predetermined composition at a temperature of 100° C. or less, thereby forming an oxide film of a predetermined thickness while removing particles adhered on the main surface of the wafer; and performing a surface polishing step where the main surface of the wafer is mirror polished.

摘要翻译： 一种制造外延晶片的方法，包括：在由硅单晶构成的晶片的主表面上进行硅的外延生长; 使用预定组成的处理液在100℃以下的温度下对晶片的主表面进行表面平整预处理，从而形成预定厚度的氧化膜，同时除去附着在晶片主表面上的颗粒 ; 并进行表面抛光步骤，其中晶片的主表面被镜面抛光。