公开(公告)号：US20090045810A1

公开(公告)日：2009-02-19

申请号：US12256798

申请日：2008-10-23

申请人： Shinji Sugihara ,  Hideto Ando ,  Shinich Sasaki

发明人： Shinji Sugihara ,  Hideto Ando ,  Shinich Sasaki

IPC分类号： G01R33/09 ,  G01R3/00

CPC分类号： H01L27/22 ,  B82Y25/00 ,  G01R33/093 ,  Y10T29/4902

摘要： A magnetic detecting device includes a first and a second magnetoresistive element, and a first and a second fixed resistor connected in series to the first and the second magnetoresistive element, respectively. The first and the second magnetoresistive element each include a pinned magnetic layer and a free magnetic layer with a nonmagnetic conductive layer in between. The first and the second magnetoresistive element have the same layer structure except that the nonmagnetic conductive layers have different thicknesses. The thicknesses of the nonmagnetic conductive layers are set so that a positive interlayer coupling magnetic field acts between the free magnetic layer and the pinned magnetic layer of the first magnetoresistive element and a negative interlayer coupling magnetic field acts between the free magnetic layer and the pinned magnetic layer of the second magnetoresistive element. The first and the second fixed resistor have the same layer structure.

摘要翻译： 磁检测装置包括分别与第一和第二磁阻元件串联连接的第一和第二磁阻元件以及第一和第二固定电阻器。 第一和第二磁阻元件各自包括钉扎磁性层和其间具有非磁性导电层的自由磁性层。 第一和第二磁阻元件具有相同的层结构，除了非磁性导电层具有不同的厚度。 非磁性导电层的厚度被设定为使得正的层间耦合磁场作用在自由磁性层和第一磁阻元件的被钉扎的磁性层之间，负的层间耦合磁场作用在自由磁性层和固定磁体之间 第二磁阻元件的层。 第一和第二固定电阻具有相同的层结构。

公开(公告)号：US09530957B2

公开(公告)日：2016-12-27

申请号：US13446264

申请日：2012-04-13

申请人： Shinji Sugihara ,  Fumihito Koike ,  Yasushi Watanabe ,  Hideto Ando

发明人： Shinji Sugihara ,  Fumihito Koike ,  Yasushi Watanabe ,  Hideto Ando

IPC分类号： G01R33/09 ,  H01L43/08 ,  B82Y25/00 ,  G01R33/02

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/0206 ,  G01R33/093

摘要： A magnetic sensor includes magnetoresistive elements and a soft magnetic body. The magnetoresistive elements have multi layers including a magnetic layer and a nonmagnetic layer on a substrate, and exert a magnetoresistance effect. The soft magnetic body is electrically disconnected with the magnetoresistive elements, and converts a vertical magnetic field component from the outside into a magnetic field component in a horizontal direction so as to provide the magnetoresistive elements with the horizontally converted magnetic field component. The magnetoresistive elements have a pinned magnetic layer having a fixed magnetization direction and a free magnetic layer having a variable magnetization direction. The free magnetic layer is stacked on the pinned magnetic layer with a nonmagnetic layer interposed between the free magnetic layer and the pinned magnetic layer. The magnetization directions of the pinned magnetic layers of the magnetoresistive elements are the same direction. The magnetoresistive elements form a bridge circuit.

摘要翻译： 磁传感器包括磁阻元件和软磁体。 磁阻元件具有在基板上包括磁性层和非磁性层的多层，并施加磁阻效应。 软磁体与磁阻元件电气断开，并将来自外部的垂直磁场分量在水平方向上转换成磁场分量，从而为磁阻元件提供水平转换的磁场分量。 磁阻元件具有固定磁化方向的固定磁性层和具有可变磁化方向的自由磁性层。 自由磁性层被叠置在被钉扎的磁性层上，其中非磁性层介于自由磁性层和被钉扎的磁性层之间。 磁阻元件的钉扎磁性层的磁化方向是相同的方向。 磁阻元件形成桥接电路。

公开(公告)号：US07834619B2

公开(公告)日：2010-11-16

申请号：US12703401

申请日：2010-02-10

申请人： Hideto Ando ,  Shinji Sugihara

发明人： Hideto Ando ,  Shinji Sugihara

IPC分类号： G01R33/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  H01L43/08

摘要： A magnetic detection device includes a sensor unit including a sensor pattern having a plurality of magnetoresistance effect films whose ends in the length direction thereof are coupled via return portions, and electrode units formed at both ends of the sensor pattern in the longitudinal direction thereof. A non-magnetic conductor is electrically connected across a top surface of one of a pair of magnetoresistance effect films that are coupled via the corresponding one of the return portions and that face each other and a top surface of the other magnetoresistance effect film. Therefore, the resistance value between the electrode units can be adjusted without increasing the dimensions of the sensor unit, and deterioration or variation in magnetic characteristics can be reduced.

摘要翻译： 磁检测装置包括传感器单元，该传感器单元包括具有多个磁阻效应膜的传感器图案，该多个磁阻效应膜的长度方向的端部通过返回部分耦合，以及形成在传感器图案的纵向两端的电极单元。 非磁性导体跨越通过相应的一个返回部分并且彼此面对的另一个磁阻效应膜的顶表面耦合的一对磁阻效应膜之一的顶表面电连接。 因此，可以在不增加传感器单元的尺寸的情况下调节电极单元之间的电阻值，并且可以降低磁特性的劣化或变化。

公开(公告)号：US20090147409A1

公开(公告)日：2009-06-11

申请号：US12256189

申请日：2008-10-22

申请人： Shinji Sugihara ,  Hideto Ando ,  Shinichi Sasaki ,  Takuya Seino

发明人： Shinji Sugihara ,  Hideto Ando ,  Shinichi Sasaki ,  Takuya Seino

IPC分类号： G11B5/33

CPC分类号： H01F10/3268 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3929 ,  H01F41/306 ,  H01L27/22 ,  H01L43/08

摘要： The thickness of an antiferromagnetic layer (IrMn) and the thickness of a nonmagnetic interlayer (Cu) are adjusted so as to be within the area surrounded by boundaries a to f on the graph of FIG. 6 in which the horizontal axis represents the IrMn film thickness and the vertical axis represents the Cu film thickness. Consequently, the interlayer coupling magnetic field Hin can be made to be 10 Oe or more, and the variation in the interlayer coupling magnetic field Hin can be made to be 2 Oe or less. In addition, in the area surrounded by boundaries a to f, at any IrMn film thickness, the Cu film thickness range in which the variation can be made to be 2 Oe or less can be set over a wide range, as compared with a known structure.

摘要翻译： 调整反铁磁性层（IrMn）的厚度和非磁性中间层（Cu）的厚度，使其在由图中的边界a至f包围的区域内。 6 ，其中横轴表示IrMn膜厚度，纵轴表示Cu膜厚度。 因此，层间耦合磁场Hin可以为10Oe以上，层间耦合磁场Hin的变化可以为2Oe以下。 此外，在边界a至f所包围的区域中，在任何IrMn膜厚度下，与已知的相比，可以在宽范围内将变化的Cu膜厚度范围设定为2Oe以下 结构体。

公开(公告)号：US09207293B2

公开(公告)日：2015-12-08

申请号：US13466887

申请日：2012-05-08

申请人： Hideto Ando ,  Shinji Sugihara ,  Fumihito Koike ,  Kota Asatsuma

发明人： Hideto Ando ,  Shinji Sugihara ,  Fumihito Koike ,  Kota Asatsuma

IPC分类号： G11B5/127 ,  H04R31/00 ,  G01R33/09 ,  B82Y25/00 ,  H01L43/08 ,  H01L43/12

CPC分类号： G01R33/093 ,  B82Y25/00 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic sensor having no sensitivity differences between sensitivity axes, and an easy manufacturing method therefor are provided. The method includes a process of forming first stacked films for a magnetoresistive element on a substrate. This element has a sensitivity axis in a certain direction and includes a self-pinned ferromagnetic pinned layer in which first and second ferromagnetic films are antiferromagnetically coupled through an antiparallel coupling layer, a nonmagnetic intermediate layer, and a soft magnetic free layer. The method further includes a process of removing a region of the first stacked films from the substrate. The remaining region of the films includes at least a region to be left to form the element. The method furthermore includes a process of forming second stacked films for a magnetoresistive element, which has a sensitivity axis in a direction different from the certain direction and has the same structure, on the exposed substrate.

摘要翻译： 提供了灵敏度轴之间没有灵敏度差的磁传感器及其制造方法。 该方法包括在基板上形成用于磁阻元件的第一层叠膜的工艺。 该元件在一定方向上具有灵敏度轴，并且包括自身固定的铁磁性钉扎层，其中第一和第二铁磁性膜通过反平行耦合层，非磁性中间层和软磁性层反铁磁耦合。 该方法还包括从衬底去除第一层叠膜的区域的工艺。 膜的剩余区域至少包括要形成元件的区域。 该方法还包括在暴露的基板上形成具有与某一方向不同的方向并且具有相同结构的灵敏度轴的用于磁阻元件的第二叠层膜的工艺。

公开(公告)号：US08198886B2

公开(公告)日：2012-06-12

申请号：US12256798

申请日：2008-10-23

申请人： Shinji Sugihara ,  Hideto Ando ,  Shinichi Sasaki

发明人： Shinji Sugihara ,  Hideto Ando ,  Shinichi Sasaki

IPC分类号： G01R1/20

CPC分类号： H01L27/22 ,  B82Y25/00 ,  G01R33/093 ,  Y10T29/4902

摘要： A magnetic detecting device includes a first and a second magnetoresistive element, and a first and a second fixed resistor connected in series to the first and the second magnetoresistive element, respectively. The first and the second magnetoresistive element each include a pinned magnetic layer and a free magnetic layer with a nonmagnetic conductive layer in between. The first and the second magnetoresistive element have the same layer structure except that the nonmagnetic conductive layers have different thicknesses. The thicknesses of the nonmagnetic conductive layers are set so that a positive interlayer coupling magnetic field acts between the free magnetic layer and the pinned magnetic layer of the first magnetoresistive element and a negative interlayer coupling magnetic field acts between the free magnetic layer and the pinned magnetic layer of the second magnetoresistive element. The first and the second fixed resistor have the same layer structure.

摘要翻译： 磁检测装置包括分别与第一和第二磁阻元件串联连接的第一和第二磁阻元件以及第一和第二固定电阻器。 第一和第二磁阻元件各自包括钉扎磁性层和其间具有非磁性导电层的自由磁性层。 第一和第二磁阻元件具有相同的层结构，除了非磁性导电层具有不同的厚度。 非磁性导电层的厚度被设定为使得正的层间耦合磁场作用在自由磁性层和第一磁阻元件的被钉扎的磁性层之间，负的层间耦合磁场作用在自由磁性层和固定磁体之间 第二磁阻元件的层。 第一和第二固定电阻具有相同的层结构。

公开(公告)号：US20100141251A1

公开(公告)日：2010-06-10

申请号：US12703401

申请日：2010-02-10

申请人： Hideto Ando ,  Shinji Sugihara

发明人： Hideto Ando ,  Shinji Sugihara

IPC分类号： G01R33/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  H01L43/08

摘要： A magnetic detection device includes a sensor unit including a sensor pattern having a plurality of magnetoresistance effect films whose ends in the length direction thereof are coupled via return portions, and electrode units formed at both ends of the sensor pattern in the longitudinal direction thereof. A non-magnetic conductor is electrically connected across a top surface of one of a pair of magnetoresistance effect films that are coupled via the corresponding one of the return portions and that face each other and a top surface of the other magnetoresistance effect film. Therefore, the resistance value between the electrode units can be adjusted without increasing the dimensions of the sensor unit, and deterioration or variation in magnetic characteristics can be reduced.

摘要翻译： 磁检测装置包括传感器单元，该传感器单元包括具有多个磁阻效应膜的传感器图案，该多个磁阻效应膜的长度方向的端部通过返回部分耦合，以及形成在传感器图案的纵向两端的电极单元。 非磁性导体跨越通过相应的一个返回部分并且彼此面对的另一个磁阻效应膜的顶表面耦合的一对磁阻效应膜之一的顶表面电连接。 因此，可以在不增加传感器单元的尺寸的情况下调节电极单元之间的电阻值，并且可以降低磁特性的劣化或变化。

公开(公告)号：US07855556B2

公开(公告)日：2010-12-21

申请号：US12819870

申请日：2010-06-21

申请人： Hiromitsu Sasaki ,  Hideto Ando

发明人： Hiromitsu Sasaki ,  Hideto Ando

IPC分类号： G01R33/09 ,  H01L43/08

CPC分类号： G01R33/09 ,  B82Y25/00 ,  G01R33/0005 ,  G01R33/093 ,  H01L43/08

摘要： A magnetic sensor including a magnetoresistive effect element has the following structure. Element units each having an element width W1 and an element length L1 perpendicular to the element width W1 and producing a magnetoresistive effect in which electrical resistance changes in response to an external magnetic field are arranged in an element-length direction with a space therebetween. An intermediate permanent magnet layer is disposed in the space, and the element units are connected to each other with the intermediate permanent magnet layer therebetween to form a connected-element body. A plurality of the connected-element bodies are arranged so as to be adjacent to one another in an element-width direction with a space therebetween, the ends of the connected-element bodies are connected to each other with an outer permanent magnet layer therebetween to form a magnetoresistive effect element having a meandering shape.

摘要翻译： 包括磁阻效应元件的磁传感器具有以下结构。 每个具有元件宽度W1和垂直于元件宽度W1的元件长度L1并且产生其中电阻随着外部磁场变化的磁阻效应的元件单元在其间具有空间的元件长度方向排列。 中间永磁体层设置在该空间中，并且元件单元彼此连接，中间永久磁铁层之间形成连接元件体。 多个连接元件体在元件宽度方向上彼此相邻设置，并且在其之间具有间隙，连接元件体的端部之间以外部永磁体层彼此连接， 形成具有曲折形状的磁阻效应元件。

公开(公告)号：US07592805B2

公开(公告)日：2009-09-22

申请号：US11679015

申请日：2007-02-26

申请人： Hideto Ando ,  Hideki Gochou ,  Motoki Hirayama

发明人： Hideto Ando ,  Hideki Gochou ,  Motoki Hirayama

IPC分类号： G01R33/02

CPC分类号： G01D5/142

摘要： In a magnetic detection device using a magnetic resistance element, the resistance of a layer having a multi-layer structure can be easily adjusted without causing damages to the layer. A magneto-resistance layer is connected in series to a reference resistance layer, and a magneto-resistance layer is connected in series to a reference resistance layer on a substrate. A voltage is applied between a power supply layer and a grounding layer. A first output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. A second output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. Accordingly, it is possible to adjust the resistance of the reference resistance layers by selecting the respective positions of the connection layers.

摘要翻译： 在使用磁阻元件的磁检测装置中，可以容易地调整具有多层结构的层的电阻而不会对该层造成损害。 磁阻层与参考电阻层串联连接，并且磁阻层与衬底上的参考电阻层串联连接。 在电源层和接地层之间施加电压。 第一输出导电层和参考电阻层彼此并联延伸，使得它们经由连接层部分地彼此电连接。 第二输出导电层和参考电阻层彼此并联延伸，使得它们经由连接层部分地彼此电连接。 因此，可以通过选择连接层的各个位置来调整参考电阻层的电阻。

公开(公告)号：US07800365B2

公开(公告)日：2010-09-21

申请号：US12623029

申请日：2009-11-20

申请人： Kiyoshi Sato ,  Hideto Ando ,  Hideki Gochou

发明人： Kiyoshi Sato ,  Hideto Ando ,  Hideki Gochou

IPC分类号： G01R33/04

CPC分类号： G01R33/093 ,  B82Y25/00

摘要： An integrated circuit is provided with two output terminals and a mode switch circuit which includes a pair of switch terminals. The mode switch circuit is allowed to switch the output mode between the 1-output mode for outputting the (+) magnetic field detection signal and the (−) magnetic field detection signal from the output terminal, and the 2-output mode for outputting the (+) magnetic field signal from the output terminal as one of the output terminals, and the (−) magnetic field detection signal from the output terminal as the other output terminal in accordance with the shortcircuit state or the non-shortcircuit state between the switch terminals. The switch terminals are exposed on the surface of the device, and the shortcircuit state and the non-shortcircuit state may be externally adjusted.

摘要翻译： 集成电路具有两个输出端子和一个包括一对开关端子的模式开关电路。 允许模式切换电路在用于输出（+）磁场检测信号和来自输出端子的（ - ））磁场检测信号的1输出模式之间切换输出模式，以及用于输出 （+）磁场信号作为输出端子之一，以及根据短路状态或开关之间的非短路状态的来自输出端子的（ - ）磁场检测信号作为另一输出端子 终端。 开关端子被暴露在器件的表面上，并且可以从外部调节短路状态和非短路状态。