公开(公告)号：US20110175201A1

公开(公告)日：2011-07-21

申请号：US12834977

申请日：2010-07-13

申请人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

发明人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

IPC分类号： H01L29/20

CPC分类号： H01L21/28575 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40

摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.

摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。 半导体区具有由III族氮化物晶体组成的表面。 半导体区域掺杂有p型掺杂剂。 表面是半极性表面和非极性表面之一。 金属电极设置在表面上。 在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。 过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

公开(公告)号：US08415707B2

公开(公告)日：2013-04-09

申请号：US12834977

申请日：2010-07-13

申请人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

发明人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

IPC分类号： H01L33/00

CPC分类号： H01L21/28575 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40

摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.

摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。 半导体区域具有由III族氮化物晶体组成的表面。 半导体区域掺杂有p型掺杂剂。 表面是半极性表面和非极性表面之一。 金属电极设置在表面上。 在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。 过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

公开(公告)号：US08227898B2

公开(公告)日：2012-07-24

申请号：US12836222

申请日：2010-07-14

申请人： Shinji Tokuyama ,  Masahiro Adachi ,  Takashi Kyono ,  Yoshihiro Saito

发明人： Shinji Tokuyama ,  Masahiro Adachi ,  Takashi Kyono ,  Yoshihiro Saito

IPC分类号： H01L29/20 ,  H01L29/04

CPC分类号： H01L33/40 ,  H01L33/16 ,  H01L33/32

摘要： A semiconductor device has a satisfactory ohmic contact on a p-type principal surface tilting from a c-plane. The principal surface 13a of a p-type semiconductor region 13 extends along a plane tilting from a c-axis (axis ) of hexagonal group-III nitride. A metal layer 15 is deposited on the principal surface 13a of the p-type semiconductor region 13. The metal layer 15 and the p-type semiconductor region 13 are separated by an interface 17 such that the metal layer functions as a non-alloy electrode. Since the hexagonal group-III nitride contains gallium as a group-III element, the principal surface 13a comprising the hexagonal group-III nitride is more susceptible to oxidation compared to the c-plane of the hexagonal group-III nitride. The interface 17 avoids an increase in amount of oxide after the formation of the metal layer 15 for the electrode.

摘要翻译： 半导体器件在从c面倾斜的p型主表面上具有令人满意的欧姆接触。 p型半导体区域13的主表面13a沿着从六方晶III族氮化物的c轴（轴<0001>）倾斜的平面延伸。 金属层15沉积在p型半导体区域13的主表面13a上。金属层15和p型半导体区域13被界面17分离，使得金属层用作非合金电极 。 由于六方晶III族氮化物含有镓作为III族元素，所以与六方晶III族氮化物的c面相比，包含六方晶III族氮化物的主表面13a更易于氧化。 界面17避免了形成用于电极的金属层15之后的氧化物的量的增加。

公开(公告)号：US08927962B2

公开(公告)日：2015-01-06

申请号：US13055690

申请日：2010-02-26

申请人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

发明人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

IPC分类号： H01L29/66 ,  H01L33/32 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/16 ,  H01S5/32

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325 ,  H01S5/3202

摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.

摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。 主表面13a具有半极性。 活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。 多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

公开(公告)号：US08619828B2

公开(公告)日：2013-12-31

申请号：US12836065

申请日：2010-07-14

申请人： Katsushi Akita ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Shinji Tokuyama ,  Yusuke Yoshizumi ,  Takamichi Sumitomo ,  Masaki Ueno

发明人： Katsushi Akita ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Shinji Tokuyama ,  Yusuke Yoshizumi ,  Takamichi Sumitomo ,  Masaki Ueno

IPC分类号： H01S5/343

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3202

摘要： A group III nitride substrate has a semi-polar primary surface. A first cladding layer has a first conductivity type, and comprises aluminum-containing group III nitride. The first cladding layer is provided on the substrate. An active layer is provided on the first cladding layer. A second cladding layer has a second conductivity type, and comprises aluminum-containing group III nitride. The second cladding layer is provided on the active layer. An optical guiding layer is provided between the first cladding layer and the active layer and/or between the second cladding layer and the active layer. The optical guiding layer comprises a first layer comprising Inx1Ga1-x1N (0≦x1

摘要翻译： III族氮化物衬底具有半极性主表面。 第一包层具有第一导电类型，并且包括含铝的III族氮化物。 第一包层设置在基板上。 在第一包层上设置有源层。 第二包层具有第二导电类型，并且包括含铝的III族氮化物。 第二包覆层设置在有源层上。 在第一包层和有源层之间和/或第二包层和有源层之间设置光导层。 光引导层包括包含In x Ga 1-x N（0 @ x1 <1）的第一层和包括In x 2 Ga 1-x 2 N（x 1

公开(公告)号：US20110241016A1

公开(公告)日：2011-10-06

申请号：US13054037

申请日：2010-06-18

申请人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

发明人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

IPC分类号： H01L33/16 ,  H01L33/30

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3404

摘要： A nitride-based semiconductor light-emitting element LE1 or LD1 has: a gallium nitride substrate 11 having a principal surface 11a which makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer 13; a second gallium nitride-based semiconductor layer 17; and a light-emitting layer 15 including a plurality of well layers of InGaN and a plurality of barrier layers 23 of a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layers 21 is the direction from the n-type gallium nitride-based semiconductor layer 13 toward the second gallium nitride-based semiconductor layer 17.

摘要翻译： 氮化物系半导体发光元件LE1或LD1具有：氮化镓衬底11，其具有在40°至50°的范围内或大于90°至130°的范围内具有角度α的主表面11a， 其中参考平面Sc垂直于在c轴方向上延伸的参考轴线Cx; n型氮化镓系半导体层13; 第二氮化镓基半导体层17; 以及包括多个InGaN阱层和GaN基半导体的多个势垒层23的发光层15，其中多个阱层21的压电极化的方向是来自n型的方向 氮化镓系半导体层13朝向第二氮化镓系半导体层17。

公开(公告)号：US07933303B2

公开(公告)日：2011-04-26

申请号：US12844446

申请日：2010-07-27

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。 第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。 因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。 在激光结构13中，第一表面13a与第二表面13b相对。 第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US08917750B2

公开(公告)日：2014-12-23

申请号：US13328622

申请日：2011-12-16

申请人： Masahiro Adachi ,  Shinji Tokuyama ,  Yohei Enya ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura

发明人： Masahiro Adachi ,  Shinji Tokuyama ,  Yohei Enya ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/20 ,  B82Y20/00 ,  H01S5/30 ,  H01S5/22

CPC分类号： H01S5/2004 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/309 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/18 ,  H01S2302/00

摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.

摘要翻译： 提供能够以低阈值激光的III族氮化物半导体激光二极管。 支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。 在支撑基体的主表面上方设置有n型包层区域和p型包层区域。 芯型半导体区域设置在n型包层区域和p型包层区域之间。 芯半导体区域包括第一光导层，有源层和第二光导层。 有源层设置在第一光导层和第二光导层之间。 芯半导体区域的厚度不小于0.5μm。 这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

公开(公告)号：US08693515B2

公开(公告)日：2014-04-08

申请号：US13050330

申请日：2011-03-17

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01S5/223

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。 第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。 因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。 在激光结构13中，第一表面13a与第二表面13b相对。 第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US08653621B2

公开(公告)日：2014-02-18

申请号：US13054037

申请日：2010-06-18

申请人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

发明人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

IPC分类号： H01L31/102

摘要： A nitride-based semiconductor light-emitting element LE1 or LD1 has: a gallium nitride substrate 11 having a principal surface 11a which makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer 13; a second gallium nitride-based semiconductor layer 17; and a light-emitting layer 15 including a plurality of well layers of InGaN and a plurality of barrier layers 23 of a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layers 21 is the direction from the n-type gallium nitride-based semiconductor layer 13 toward the second gallium nitride-based semiconductor layer 17.