利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

58 条记录 (耗时 0.03 秒)

    Plasma Processing Apparatus
    1.
    发明申请
    Plasma Processing Apparatus 审中-公开
    等离子体处理装置

    公开(公告)号：US20100132888A1

    公开(公告)日：2010-06-03

    申请号：US12699382

    申请日：2010-02-03

    申请人： Shoji IKUHARA ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

    发明人： Shoji IKUHARA ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01L21/67253

    摘要： A plasma processing apparatus includes a plasma processing main frame, and an apparatus controller controlling the plasma processing main frame. The plasma processing main frame has a vacuum process chamber, an exhaust device, a mass flow controller, a stage electrode receiving a workpiece, a high-frequency electrical source to, and a transfer device placing the workpiece on the stage electrode and carrying out the processed workpiece. The apparatus controller controls the plasma processing main frame in accordance with a predetermined procedure and is provided with a diagnosis device which acquires a plurality of recipes for processing workpieces carried in the chamber and apparatus parameters of the plasma processing apparatus when a specific recipe of the above recipes is executed, whereby the condition of the plasma processing main frame is diagnosed based on the acquired apparatus parameters.

    摘要翻译： 等离子体处理装置包括等离子体处理主框架和控制等离子体处理主框架的装置控制器。 等离子体处理主框架具有真空处理室，排气装置，质量流量控制器，接收工件的阶段电极，高频电源和将工件放置在平台电极上的传送装置， 加工工件。 设备控制器按照预定的步骤控制等离子体处理主框架，并且设置有诊断装置，该诊断装置获取用于处理在室中携带的工件的多个配方和等离子体处理装置的装置参数，当上述特定配方 执行配方，由此基于所获取的装置参数来诊断等离子体处理主框架的状态。

    Plasma Processing Method
    2.
    发明申请
    Plasma Processing Method 审中-公开
    等离子体处理方法

    公开(公告)号：US20100297783A1

    公开(公告)日：2010-11-25

    申请号：US12849233

    申请日：2010-08-03

    申请人： Shoji IKUHARA ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

    发明人： Shoji IKUHARA ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

    IPC分类号： H01L21/302

    CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01L21/67253

    摘要： A method for performing a plasma process using a plasma processing apparatus which includes a vacuum process chamber, an exhaust device, a mass flow controller supplying a process gas, a stage electrode which receives and holds a workpiece by adsorption, a transfer device, and a high-frequency electrical source. The method includes a first step of performing the plasma process for the workpiece in the vacuum process chamber by a corresponding recipe of predetermined recipes, a second step of acquiring apparatus parameters showing the condition of the plasma processing apparatus when a specific recipe of the predetermined recipes is executed to diagnose whether the condition of the plasma processing apparatus is good or not based on the acquired apparatus parameters.

    摘要翻译： 一种使用等离子体处理装置进行等离子体处理的方法，所述等离子体处理装置包括真空处理室，排气装置，供给处理气体的质量流量控制器，通过吸附接收和保持工件的载物台电极，转印装置和 高频电源。 该方法包括：通过预定配方的相应配方对真空处理室中的工件进行等离子体处理的第一步骤;获取当预定配方的特定配方时显示等离子体处理装置的状态的装置参数的第二步骤 被执行以基于所获取的装置参数来诊断等离子体处理装置的状况是否良好。

    Plasma processing apparatus
    3.
    发明申请
    Plasma processing apparatus 审中-公开
    等离子体处理装置

    公开(公告)号：US20060260746A1

    公开(公告)日：2006-11-23

    申请号：US11199234

    申请日：2005-08-09

    申请人： Shoji Ikuhara ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

    发明人： Shoji Ikuhara ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01L21/67253

    摘要： There is provided a preventive maintenance technique capable of diagnosing apparatus conditions without causing serious decrease in uptime ratio. A plasma process apparatus is composed of a plasma processing main frame, and an apparatus controller controlling the plasma processing main frame. The plasma processing main frame has a vacuum process chamber, an exhaust device evacuating the vacuum process chamber, a mass flow controller supplying a process gas into the vacuum process chamber, a stage electrode receiving a workpiece and holding it by adsorption, a high-frequency electrical source applying a high-frequency electrical power to the supplied process gas to generate plasma, and a transfer device placing the workpiece on the stage electrode and carrying out the processed workpiece. The apparatus controller controls the plasma processing main frame in accordance with a predetermined procedure and is provided with a diagnosis device which acquires a plurality of recipes for processing workpieces carried in the chamber and apparatus parameters of the plasma processing apparatus when a specific recipe of the above recipes is executed, whereby the condition of the plasma processing main frame is diagnosed based on the acquired apparatus parameters.

    摘要翻译： 提供了能够诊断装置条件而不引起正常运行时间比例严重降低的预防性维护技术。 等离子体处理装置由等离子体处理主框架和控制等离子体处理主框架的装置控制器构成。 等离子体处理主框架具有真空处理室，抽真空处理室的排气装置，向真空处理室供给工艺气体的质量流量控制器，接收工件并通过吸附保持其的阶段电极，高频 电源向所提供的处理气体施加高频电力以产生等离子体;以及传送装置，将工件放置在平台电极上并且执行被处理的工件。 设备控制器按照预定的步骤控制等离子体处理主框架，并且设置有诊断装置，该诊断装置获取用于处理在室中携带的工件的多个配方和等离子体处理装置的装置参数，当上述特定配方 执行配方，由此基于所获取的装置参数来诊断等离子体处理主框架的状态。

    Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus
    5.
    发明授权
    Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus 失效
    蚀刻装置，自偏压测定方法以及蚀刻装置的监视方法

    公开(公告)号：US07330346B2

    公开(公告)日：2008-02-12

    申请号：US11506791

    申请日：2006-08-21

    申请人： Shoji Ikuhara ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Akira Kagoshima

    发明人： Shoji Ikuhara ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Akira Kagoshima

    IPC分类号： H02N13/00

    CPC分类号： H01L21/6833 ,  H02N13/00

    摘要： The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanism 1 and 10 for chucking a sample 2, a mechanism 13 and 14 for supplying cooling gas 12 to a rear surface of the sample 2 and controlling the pressure thereof, and a means for measuring the relative force of electrostatic chuck of the sample based on the rear surface pressure control status of the sample 2 being processed, wherein the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control of the sample 2 when high-frequency bias power is applied to the sample 2 being processed, and the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control status of the sample when high-frequency bias power is not applied to the sample being processed, and the self-bias voltage is estimated using the acquired forces of electrostatic chuck and the electrostatic chuck voltages corresponding to the two statuses.

    摘要翻译： 本发明提供了一种用于通过简单的过程在任意蚀刻条件下估计自偏压的装置。 本发明提供了一种用于测量蚀刻装置的自偏压的方法，该蚀刻装置包括用于夹持样品2的静电卡盘机构1和10，用于将冷却气体12供应到样品2的后表面的机构13和14，并且控制 其压力，以及用于根据正在处理的样品2的背面压力控制状态来测量样品的静电卡盘的相对力的装置，其中样品的静电卡盘的相对力和对应于 当对待处理的样品2施加高频偏置功率时，基于样品2的背面压力控制获取静电卡盘的力，并且将样品的静电卡盘与静电卡盘电压的相对力对应于 当高频时，基于样品的背面压力控制状态获取静电卡盘的力 cy偏压功率不会被施加到正在处理的样品，并且使用所获取的静电卡盘的力和对应于两种状态的静电卡盘电压来估计自偏压。

    Plasma processing apparatus and method
    6.
    发明授权
    Plasma processing apparatus and method 有权
    等离子体处理装置及方法

    公开(公告)号：US06908529B2

    公开(公告)日：2005-06-21

    申请号：US10087771

    申请日：2002-03-05

    申请人： Hideyuki Yamamoto ,  Akira Kagoshima ,  Shoji Ikuhara ,  Daisuke Shiraishi ,  Junichi Tanaka

    发明人： Hideyuki Yamamoto ,  Akira Kagoshima ,  Shoji Ikuhara ,  Daisuke Shiraishi ,  Junichi Tanaka

    IPC分类号： B01J19/08 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065 ,  H05H1/00 ,  C23C16/00 ,  C23F1/00

    CPC分类号： H01L21/67253 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/67069

    摘要： A plasma processing system for processing a workpiece by using plasma generated in a chamber, includes a light transmissive member disposed in the chamber, the workpiece being disposed inside the light transmissive member; and a light receiving unit mounted on the chamber for receiving light inside the light transmissive member, wherein a state of processing the workpiece is detected by using data detected from light inside the light transmissive member before processing the workpiece and data detected from light inside the light transmissive member generated during processing the workpiece. A plasma processing method and system is provided which facilitates an operation of the system and executes a reliable processing.

    摘要翻译： 一种用于通过使用在室中产生的等离子体处理工件的等离子体处理系统，包括设置在所述室中的透光构件，所述工件设置在所述透光构件内部; 以及安装在所述室上的受光单元，用于在所述透光构件内部接收光，其中，在处理所述工件之前，通过使用从所述透光构件内的光检测到的数据来检测所述工件的处理状态和从所述光内的光检测的数据 在处理工件期间产生的透射构件。 提供了一种等离子体处理方法和系统，其有助于系统的操作并执行可靠的处理。

    Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor
    7.
    发明授权
    Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor 有权
    监控和/或控制半导体制造装置的方法及其系统

    公开(公告)号：US07058470B2

    公开(公告)日：2006-06-06

    申请号：US10999006

    申请日：2004-11-30

    申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

    发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

    IPC分类号： G06F19/00

    CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

    摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition or input parameter. The process recipe control unit includes a controller which controls at least one of a plurality of different processing performances for processing of the semiconductor wafer.

    摘要翻译： 用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程 依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。 该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测的处理结果与预先设定的值进行比较，以控制处理条件或输入参数。 处理配方控制单元包括控制器，用于控制用于处理半导体晶片的多个不同处理性能中的至少一个。

    Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus
    9.
    发明申请
    Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus 失效
    蚀刻装置，自偏压测定方法以及蚀刻装置的监视方法

    公开(公告)号：US20070217118A1

    公开(公告)日：2007-09-20

    申请号：US11506791

    申请日：2006-08-21

    申请人： Shoji Ikuhara ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Akira Kagoshima

    发明人： Shoji Ikuhara ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Akira Kagoshima

    IPC分类号： H01T23/00

    CPC分类号： H01L21/6833 ,  H02N13/00

    摘要： The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanism 1 and 10 for chucking a sample 2, a mechanism 13 and 14 for supplying cooling gas 12 to a rear surface of the sample 2 and controlling the pressure thereof, and a means for measuring the relative force of electrostatic chuck of the sample based on the rear surface pressure control status of the sample 2 being processed, wherein the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control of the sample 2 when high-frequency bias power is applied to the sample 2 being processed, and the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control status of the sample when high-frequency bias power is not applied to the sample being processed, and the self-bias voltage is estimated using the acquired forces of electrostatic chuck and the electrostatic chuck voltages corresponding to the two statuses.

    摘要翻译： 本发明提供了一种用于通过简单的过程在任意蚀刻条件下估计自偏压的装置。 本发明提供了一种用于测量蚀刻装置的自偏压的方法，该蚀刻装置包括用于夹持样品2的静电卡盘机构1和10，用于将冷却气体12供应到样品2的后表面的机构13和14，并且控制 其压力，以及用于根据正在处理的样品2的背面压力控制状态来测量样品的静电卡盘的相对力的装置，其中样品的静电卡盘的相对力和对应于 当对待处理的样品2施加高频偏置功率时，基于样品2的背面压力控制获取静电卡盘的力，并且将样品的静电卡盘与静电卡盘电压的相对力对应于 基于高频时样品的背面压力控制状态获取静电卡盘的力 y偏压功率不会被施加到正在处理的样品，并且使用所获取的静电卡盘的力和对应于两种状态的静电卡盘电压来估计自偏压。