摘要:
The present disclosure provides a dual workfunction semiconductor device and a method for manufacturing a dual workfunction semiconductor device. The method comprises providing a device on a first region and a device on a second region of a substrate. According to embodiments described herein, the method includes providing a dielectric layer onto the first and second region of the substrate, the dielectric layer on the first region being integrally deposited with the dielectric layer on the second region, and providing a gate electrode on top of the dielectric layer on both the first and second regions, the gate electrode on the first region being integrally deposited with the gate electrode on the second region. The method further includes changing the workfunction of the device on the first region by providing a capping layer onto the first region between the dielectric layer and the gate electrode, and changing the workfunction of the device on the second region by including species at the interface between the dielectric layer and the electrode.
摘要:
A semiconductor device and a method of manufacturing a gate stack for such a semiconductor device. The device includes a gate stack that has a gate insulation layer provided over a channel region of the device, and a metal layer that is insulated from the channel region by the gate insulation layer. The metal layer contains work function modulating impurities which have a concentration profile that varies along a length of the metal layer from the source region to the drain region. The gate stack has a first effective work function in the vicinity of a source region and/or the drain region of the device and a second, different effective work function toward a center of the channel region.
摘要:
A method of manufacturing a semiconductor device having gate electrodes of a suitable work function material is disclosed. The method comprises providing a substrate (100) including a number of active regions (110, 120) and a dielectric layer (130) covering the active regions (110, 120), and forming a stack of layers (140, 150, 160) over the dielectric layer. The formation of the stack of layers comprises depositing a first metal layer (140), having a first thickness, e.g. less than 10 nm, over the dielectric layer (130), depositing a second metal layer (150) having a second thickness over the first metal layer (140), the second thickness being larger than the first thickness, introducing a dopant (152, 154) into the second metal layer (150), exposing the device to an increased temperature to migrate at least some of the dopant (152, 154) from the second metal layer (150) beyond the interface between the first metal layer (140) and the second metal layer (150); and patterning the stack into a number of gate electrodes (170). This way a gate electrode is formed having an dopant profile in the vicinity of the dielectric layer (130) such that the work function of the gate electrode is optimized, without the gate dielectric suffering from degradation by dopant penetration.
摘要:
The present disclosure provides a semiconductor device that includes a semiconductor substrate having a first region and a second region, a pMOS transistor formed over the first region and an nMOS formed over the second region. The pMOS transistor has a gate structure that includes: an interfacial layer formed over the substrate; a AlOx layer formed over the interfacial layer; and a metal layer including Mo or W formed over the AlOx layer. The nMOS transistor has a gate structure that includes: the interfacial layer formed over the substrate; a DyOx layer formed over the interfacial layer; and the metal layer including Mo or W formed over the DyOx layer.
摘要:
A semiconductor device and a method of manufacturing a gate stack for such a semiconductor device. The device includes a gate stack that has a gate insulation layer provided over a channel region of the device, and a metal layer that is insulated from the channel region by the gate insulation layer. The metal layer contains work function modulating impurities which have a concentration profile that varies along a length of the metal layer from the source region to the drain region. The gate stack has a first effective work function in the vicinity of a source region and/or the drain region of the device and a second, different effective work function toward a centre of the channel region.
摘要:
The present disclosure provides a semiconductor device that includes a semiconductor substrate having a first region and a second region, a pMOS transistor formed over the first region and an nMOS formed over the second region. The pMOS transistor has a gate structure that includes: an interfacial layer formed over the substrate; a AlOx layer formed over the interfacial layer; and a metal layer including Mo or W formed over the AlOx layer. The nMOS transistor has a gate structure that includes: the interfacial layer formed over the substrate; a DyOx layer formed over the interfacial layer; and the metal layer including Mo or W formed over the DyOx layer.
摘要:
A semiconductor device includes a p-type active region and an n-type active region which are formed in a semiconductor substrate and a p-type MISFET including a gate insulating film formed on the p-type active region and a first gate electrode including a first electrode formation film of which upper part has a concentration of La higher than the other part thereof. The semiconductor device further includes an n-type MISFET including a gate insulating film formed on the n-type active region and a second gate electrode including a second electrode formation film of which upper part has a concentration of Al higher than the other part thereof.