摘要:
A method for manufacturing a dual work function semiconductor device is disclosed. In one aspect, a method starts by forming a host dielectric layer over a first and second region of a substrate. A first dielectric capping layer is formed overlying the host dielectric layer on the first and second region and later selectively removed to expose an underlying layer on the first region. A Hf-based dielectric capping layer is formed overlying the underlying layer on the first region and the first dielectric capping layer on the second region. The Hf-based dielectric capping layer is selected to have a healing effect on the exposed surface of the underlying layer on the first region. A control electrode is formed overlaying the Hf-based dielectric capping layer on the first region and on the second region.
摘要:
A method for manufacturing a dual work function semiconductor device is disclosed. In one aspect, the method relates to providing a substrate with a first and a second region. A gate dielectric is formed overlying the first and the second region. A metal gate layer is formed overlying the gate dielectric on the first and the second region. The metal gate layer has a first (as-deposited) work function that can be modified upon inducing strain thereon. The method further relates to selecting a first strain which induces a first pre-determined work function shift (ΔWF1) in the first (as-deposited) work function of the metal gate layer on the first region and selectively forming a first strained conductive layer overlying the metal gate layer on the first region, the first strained conductive layer exerting the selected first strain on the metal gate layer.
摘要:
Disclosed are methods for forming hybrid metal-oxide-semiconductor field effect transistors (MOSFETs) and the hybrid MOSFETS thus obtained. In one embodiment, a method is disclosed that includes providing a first substrate comprising a first region and a second region, providing a second substrate comprising a second semiconductor layer and an insulating layer overlaying the second semiconductor layer, and direct substrate bonding the second substrate to the first substrate, thereby contacting the first region and the second region with the insulating layer. The method further includes selectively removing the second semiconductor layer and the insulating layer in the first region, thereby exposing the first semiconductor layer in the first region, forming a first gate stack of a first MOSFET on the exposed first semiconductor layer in the first region, and forming a second gate stack of a second MOSFET on the second semiconductor layer in the second region.