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    Semiconductor memory device, control method therefor, and method for determining repair possibility of defective address
    2.
    发明授权
    Semiconductor memory device, control method therefor, and method for determining repair possibility of defective address 有权
    半导体存储器件及其控制方法以及用于确定缺陷地址修复可能性的方法

    公开(公告)号：US07940583B2

    公开(公告)日：2011-05-10

    申请号：US12320892

    申请日：2009-02-06

    申请人： Yoshiro Riho ,  Jun Suzuki ,  Yasuhiro Matsumoto ,  Shuichi Kubouchi ,  Hiromasa Noda ,  Yasuji Koshikawa

    发明人： Yoshiro Riho ,  Jun Suzuki ,  Yasuhiro Matsumoto ,  Shuichi Kubouchi ,  Hiromasa Noda ,  Yasuji Koshikawa

    IPC分类号： G11C29/00

    CPC分类号： G11C8/08 ,  G11C8/10 ,  G11C29/84

    摘要： There are provided are a plurality of memory mats, a sub-word driver that accesses a normal memory cell irrespective of whether a row address to which access is requested is a defective address, a sub-word driver that accesses a redundant memory cell belonging to a memory mat different from the normal memory cell indicated by the row address, when the row address is a defective address. According to the present invention, the normal memory cell and a redundant memory cell belong to memory mats different to each other, and thus the normal memory cell can be accessed concurrently with determining operation of the repair determining circuit.

    摘要翻译： 提供有多个存储器垫，子字驱动器，其访问正常存储器单元，而不管请求访问的行地址是否是缺陷地址;子字驱动器，访问属于 当行地址是缺陷地址时，由行地址指示的正常存储单元不同的存储器垫。 根据本发明，正常存储单元和冗余存储单元属于彼此不同的存储器单元，从而可以在确定修复确定电路的操作的同时访问正常存储单元。

    SEMICONDUCTOR MEMORY DEVICE AND TEST METHOD THEREOF
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND TEST METHOD THEREOF 有权
    半导体存储器件及其测试方法

    公开(公告)号：US20090268534A1

    公开(公告)日：2009-10-29

    申请号：US12426624

    申请日：2009-04-20

    申请人： Shuichi Kubouchi ,  Jun Suzuki

    发明人： Shuichi Kubouchi ,  Jun Suzuki

    IPC分类号： G11C29/00 ,  G11C7/06 ,  G11C7/00

    CPC分类号： G11C29/38 ,  G11C7/08 ,  G11C11/401 ,  G11C11/4091 ,  G11C29/025 ,  G11C2029/1204

    摘要： A semiconductor memory device comprises a memory cell array having memory cells arranged at intersections of word lines and bit lines, a first sense amplifier connected to a bit line at a predetermined position of the bit lines, a second sense amplifier connected to a bit line adjacent to the bit line at the predetermined position, a supplying circuit for supplying a predetermined voltage to each bit line connected to the first or second sense amplifier, and a sense amplifier control circuit capable of controlling the first and second sense amplifiers independently. In the semiconductor memory device, the sense amplifier control circuit performs a control in which an operation of either of the first and second sense amplifiers is stopped, the predetermined voltage is supplied to the bit line connected to the stopped sense amplifier, and the other of the first and second sense amplifiers is operated.

    摘要翻译： 半导体存储器件包括存储单元阵列，存储单元布置在字线和位线的交点处，第一读出放大器连接到位线的预定位置处的位线，第二读出放大器连接到相邻的位线 到预定位置处的位线，用于向连接到第一或第二读出放大器的每个位线提供预定电压的提供电路和能够独立地控制第一和第二读出放大器的读出放大器控制电路。 在半导体存储器件中，读出放大器控制电路执行其中停止第一和第二读出放大器之一的操作的控制，将预定电压提供给连接到停止的读出放大器的位线，另一个 第一和第二读出放大器被操作。

    Semiconductor memory device and test method thereof
    4.
    发明授权
    Semiconductor memory device and test method thereof 有权
    半导体存储器件及其测试方法

    公开(公告)号：US07940587B2

    公开(公告)日：2011-05-10

    申请号：US12426624

    申请日：2009-04-20

    申请人： Shuichi Kubouchi ,  Jun Suzuki

    发明人： Shuichi Kubouchi ,  Jun Suzuki

    IPC分类号： G11C29/00 ,  G11C5/06 ,  G11C7/00

    CPC分类号： G11C29/38 ,  G11C7/08 ,  G11C11/401 ,  G11C11/4091 ,  G11C29/025 ,  G11C2029/1204

    摘要： A semiconductor memory device comprises a memory cell array having memory cells arranged at intersections of word lines and bit lines, a first sense amplifier connected to a bit line at a predetermined position of the bit lines, a second sense amplifier connected to a bit line adjacent to the bit line at the predetermined position, a supplying circuit for supplying a predetermined voltage to each bit line connected to the first or second sense amplifier, and a sense amplifier control circuit capable of controlling the first and second sense amplifiers independently. In the semiconductor memory device, the sense amplifier control circuit performs a control in which an operation of either of the first and second sense amplifiers is stopped, the predetermined voltage is supplied to the bit line connected to the stopped sense amplifier, and the other of the first and second sense amplifiers is operated.

    摘要翻译： 半导体存储器件包括存储单元阵列，存储单元布置在字线和位线的交点处，第一读出放大器连接到位线的预定位置处的位线，第二读出放大器连接到相邻的位线 到预定位置处的位线，用于向连接到第一或第二读出放大器的每个位线提供预定电压的提供电路和能够独立地控制第一和第二读出放大器的读出放大器控制电路。 在半导体存储器件中，读出放大器控制电路执行其中停止第一和第二读出放大器之一的操作的控制，将预定电压提供给连接到停止的读出放大器的位线，另一个 第一和第二读出放大器被操作。

    Anode, corrosion-protecting structure for concrete constructions using this, and corrosion protection method
    6.
    发明授权
    Anode, corrosion-protecting structure for concrete constructions using this, and corrosion protection method 有权
    阳极，使用这种混凝土结构的防腐结构，以及防腐保护方法

    公开(公告)号：US09315906B2

    公开(公告)日：2016-04-19

    申请号：US14240570

    申请日：2012-08-24

    申请人： Yasuto Ishikawa ,  Shirou Yamamoto ,  Hirokazu Iiduka ,  Jun Suzuki ,  Tsutomu Nakamura ,  Norimasa Mimura ,  Yuichi Futaki

    发明人： Yasuto Ishikawa ,  Shirou Yamamoto ,  Hirokazu Iiduka ,  Jun Suzuki ,  Tsutomu Nakamura ,  Norimasa Mimura ,  Yuichi Futaki

    IPC分类号： C23F13/00 ,  C23F13/06 ,  C23F13/16 ,  E04C5/01

    CPC分类号： C23F13/005 ,  C23F13/06 ,  C23F13/16 ,  C23F2201/02 ,  C23F2213/22 ,  C23F2213/30 ,  E04C5/015

    摘要： To provide an anode, corrosion-protecting structure of a concrete constructions using this, and a corrosion protection method capable of protecting electrical corrosion, with little generation of gas due to electrolysis of water or chlorine compounds, by decreasing as far as possible the amount of processing performed on the structural body in on-site construction work and suppressing the voltage that is conducted therethrough to a low level. [Solution] A corrosion-protecting structure (1) is constituted by attaching an anode (10) to the surface layer (3) of a corrosion-protecting body (4) through a first electrolyte layer (12) on one face of a conductive layer (11) formed as a sheet. The electrolyte is formed as a sheet. The first electrolyte layer (12) having adhesiveness is attached to the conductive layer (11) and the surface layer (3) of the corrosion-protecting body (4).

    摘要翻译： 为了提供阳极，使用该阳极的混凝土结构的防腐蚀结构，以及能够保护电气腐蚀的腐蚀保护方法，由于电解水或氯化合物而产生的气体几乎不会通过尽可能减少 在现场施工作业中对结构体进行加工，并将通过其进行的电压抑制到低水平。 [解决方案]腐蚀保护结构（1）通过将阳极（10）通过第一电解质层（12）附着在防腐体（4）的表面层（3）上而构成， 层（11）形成为片材。 电解质形成为片状。 具有粘合性的第一电解质层（12）附着到导电层（11）和防腐体（4）的表面层（3）。

    Titanium fuel cell separator
    7.
    发明授权
    Titanium fuel cell separator 有权
    钛燃料电池分离器

    公开(公告)号：US09093672B2

    公开(公告)日：2015-07-28

    申请号：US13811098

    申请日：2010-09-01

    申请人： Jun Suzuki ,  Toshiki Sato

    发明人： Jun Suzuki ,  Toshiki Sato

    IPC分类号： H01M8/02

    CPC分类号： H01M8/0228 ,  H01M8/0206 ,  H01M8/0208 ,  Y02E60/50

    摘要： Disclosed is a titanium fuel cell separator having excellent conductivity and durability. In the disclosed titanium fuel cell separator (10), a carbon layer (2) is formed on the surface of a substrate (1) formed from pure titanium or a titanium alloy. An intermediate layer (3) is formed on the interface between the substrate (1) and the carbon layer (2). The intermediary layer (3) has lined-up granular titanium-carbide in the direction parallel to the carbon layer (2).

    摘要翻译： 公开了具有优异的导电性和耐久性的钛燃料电池隔板。 在所公开的钛燃料电池隔板（10）中，在由纯钛或钛合金形成的基板（1）的表面上形成碳层（2）。 在基板（1）和碳层（2）之间的界面上形成中间层（3）。 中间层（3）在与碳层（2）平行的方向上具有排列成型的碳化钛颗粒。

    I/O system and I/O control method
    8.
    发明授权
    I/O system and I/O control method 有权
    I / O系统和I / O控制方式

    公开(公告)号：US08683110B2

    公开(公告)日：2014-03-25

    申请号：US12674337

    申请日：2008-08-25

    申请人： Jun Suzuki ,  Youichi Hidaka ,  Takashi Yoshikawa

    发明人： Jun Suzuki ,  Youichi Hidaka ,  Takashi Yoshikawa

    IPC分类号： G06F13/36

    CPC分类号： G06F13/12

    摘要： Virtual Functions (VFs) 602-1 to 602-N of an I/O device are separately allocated to a plurality of computers 1-1 to 1-N. In an address swap table 506, a root domain that is an address space of the computer 1 and mapping information of an I/O domain that is an address space unique to the I/O device 6 are registered. Mapping is set with the VFs 602-1 to 602-N as units. When accessing the VFs 602-1 to 602-N of the I/O device 6 to which each of the computers 1-1 to 1-N is allocated, an I/O packet transfer unit 701 checks the address swap table 506 to swap source/destination addresses recorded in packet headers.

    摘要翻译： I / O设备的虚拟功能（VF）602-1至602-N分别分配给多个计算机1-1至1-N。 在地址交换表506中，登记作为计算机1的地址空间的根域和作为I / O装置6唯一的地址空间的I / O域的映射信息。 映射以VFS 602-1至602-N为单位设置。 当访问分配了计算机1-1至1-N中的每一个的I / O设备6的VFS 602-1至602-N时，I / O分组传送单元701检查地址交换表506以交换 记录在报头中的源/目的地址。

    Reflective film laminate
    9.
    发明授权
    Reflective film laminate 有权
    反光膜层压板

    公开(公告)号：US08603648B2

    公开(公告)日：2013-12-10

    申请号：US12984056

    申请日：2011-01-04

    申请人： Sho Katsura ,  Nobuhiro Kobayashi ,  Jun Suzuki ,  Toshiki Sato

    发明人： Sho Katsura ,  Nobuhiro Kobayashi ,  Jun Suzuki ,  Toshiki Sato

    IPC分类号： B32B17/06 ,  B32B15/04 ,  C23C14/00

    CPC分类号： C23C14/5853 ,  C22C21/00 ,  C23C14/205 ,  G02B5/0858 ,  Y10T428/265

    摘要： A reflective film laminate is provided with high productivity and at low cost in which a protective film with minimized pinholes is provided to improve the alkali resistance and warm water resistance of the reflective film laminate including a pure Al film or an Al-based alloy film so that a reflectivity reduction resulting from the elution or oxidization of the Al film in an alkaline or warm water environment is less likely to occur. The reflective film laminate of the present invention includes, over a substrate, a pure Al film or an Al-based alloy film as a first layer, and an oxide film of a metal containing one or more elements selected from the group consisting of Zr, Cr, Y, Nb, Hf, Ta, W, Ti, Si, and Mo as a second layer over the first layer. The thickness of the second layer is 0.1 to 10 nm.

    摘要翻译： 以低成本提供反射膜层叠体，其中提供具有最小化的针孔的保护膜以提高包括纯Al膜或Al基合金膜的反射膜层压体的耐碱性和耐温水性， 在碱性或温水环境中由于Al膜的洗脱或氧化引起的反射率降低不太可能发生。 本发明的反射膜层叠体在基板上包括作为第一层的纯Al膜或Al基合金膜，以及含有选自Zr， Cr，Y，Nb，Hf，Ta，W，Ti，Si和Mo作为第一层上的第二层。 第二层的厚度为0.1〜10nm。

    FUEL CELL SEPARATOR
    10.
    发明申请
    FUEL CELL SEPARATOR 审中-公开
    燃油电池分离器

    公开(公告)号：US20130302719A1

    公开(公告)日：2013-11-14

    申请号：US13982411

    申请日：2012-02-14

    申请人： Satoru Takada ,  Jun Suzuki ,  Toshiki Sato

    发明人： Satoru Takada ,  Jun Suzuki ,  Toshiki Sato

    IPC分类号： H01M8/02

    CPC分类号： H01M8/0206 ,  H01M8/0213 ,  H01M8/0228 ,  H01M2008/1095

    摘要： Provided is a fuel cell separator that can maintain a low contact resistance for a long period of time while being used for a fuel cell, by using a carbon film that can be formed with high productivity. The fuel cell separator 10 is provided with: a substrate 1 comprising titanium or titanium alloy; and a conductive carbon layer 2 that is formed by compression bonding carbon powder onto the substrate 1, and covers the surface thereof. Between the substrate 1 and the carbon layer 2, particle-like titanium carbide 31 and carbon dissolved titanium 32 generated by reacting the titanium of the substrate 1 and carbon of the carbon layer 2 with each other through heat treatment are connected, forming an intermediate layer 3.

    摘要翻译： 提供一种燃料电池隔板，其可以通过使用能够以高生产率形成的碳膜，能够在用于燃料电池的同时保持长时间的低接触电阻。 燃料电池隔板10设置有：包含钛或钛合金的基板1; 以及通过将碳粉压接在基板1上并覆盖其表面而形成的导电性碳层2。 在基板1和碳层2之间连接通过热处理使基板1的钛与碳层2的碳反应而产生的颗粒状的碳化钛31和碳溶解的钛32，形成中间层 3。