摘要:
First magnetoresistive effect elements and second magnetoresistive effect elements and are formed on the same substrate. A pinned magnetic layer of each of the first magnetoresistive effect elements has a three-layer laminated ferrimagnetic structure including magnetic layers. A pinned magnetic layer of each of the second magnetoresistive effect elements has a two-layer laminated ferrimagnetic structure including magnetic layers. The magnetization direction of the third magnetic layer of each of the magnetoresistive effect elements is antiparallel to the magnetization direction of the second magnetic layer of each of the second magnetoresistive effect elements.
摘要:
A magnetic sensor having no sensitivity differences between sensitivity axes, and an easy manufacturing method therefor are provided. The method includes a process of forming first stacked films for a magnetoresistive element on a substrate. This element has a sensitivity axis in a certain direction and includes a self-pinned ferromagnetic pinned layer in which first and second ferromagnetic films are antiferromagnetically coupled through an antiparallel coupling layer, a nonmagnetic intermediate layer, and a soft magnetic free layer. The method further includes a process of removing a region of the first stacked films from the substrate. The remaining region of the films includes at least a region to be left to form the element. The method furthermore includes a process of forming second stacked films for a magnetoresistive element, which has a sensitivity axis in a direction different from the certain direction and has the same structure, on the exposed substrate.
摘要:
A magnetic detection device includes a layered film including a self-pinned magnetic layer, a free magnetic layer, a nonmagnetic material layer disposed between the pinned magnetic layer and the free magnetic layer, and a top capping layer. The pinned magnetic layer includes a first magnetic layer, a second magnetic layer, and a nonmagnetic intermediate layer disposed therebetween. A first magnetization of the first magnetic layer is pinned in antiparallel with a second magnetization of the second magnetic layer. The capping layer is formed of tantalum, and an as-deposited thickness of the capping layer is 55 Å or more.