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公开(公告)号:US20080305629A1
公开(公告)日:2008-12-11
申请号:US12195263
申请日:2008-08-20
申请人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
发明人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
IPC分类号: H01L21/4763
CPC分类号: C23C16/45527 , C23C16/02 , C23C16/34 , C23C16/45525 , H01L21/28061 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L27/10861 , H01L28/60 , H01L29/4941 , H01L29/66181
摘要: In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.
摘要翻译: 在一个实施例中,提供了一种在衬底上形成钨阻挡材料的方法,其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体(例如乙硼烷或硅烷)来沉积钨层。 钨层的厚度可以为约或者更小,并且氮化钨层的电阻率可以为约380μΩ·cm以下。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。
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公开(公告)号:US20070020924A1
公开(公告)日:2007-01-25
申请号:US11532114
申请日:2006-09-15
申请人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
发明人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
IPC分类号: H01L21/4763
CPC分类号: C23C16/45527 , C23C16/02 , C23C16/34 , C23C16/45525 , H01L21/28061 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L27/10861 , H01L28/60 , H01L29/4941 , H01L29/66181
摘要: In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.
摘要翻译: 在一个实施例中,提供了一种在衬底上形成钨阻挡材料的方法,其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体(例如乙硼烷或硅烷)来沉积钨层。 钨层的厚度可以为约或者更小,并且氮化钨层的电阻率可以为约380μΩ·cm以下。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。
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公开(公告)号:US07115499B2
公开(公告)日:2006-10-03
申请号:US11003020
申请日:2004-12-01
申请人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
发明人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
IPC分类号: H01L21/4763
CPC分类号: C23C16/45527 , C23C16/02 , C23C16/34 , C23C16/45525 , H01L21/28061 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L27/10861 , H01L28/60 , H01L29/4941 , H01L29/66181
摘要: A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.
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4.
公开(公告)号:US20050176240A1
公开(公告)日:2005-08-11
申请号:US11003020
申请日:2004-12-01
申请人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
发明人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
IPC分类号: C23C16/34 , C23C16/44 , C23C16/455 , H01L21/4763
CPC分类号: C23C16/45527 , C23C16/02 , C23C16/34 , C23C16/45525 , H01L21/28061 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L27/10861 , H01L28/60 , H01L29/4941 , H01L29/66181
摘要: A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.
摘要翻译: 提供了一种用于沉积氮化钨层的方法。 该方法包括在基材上交替吸附含钨化合物和含氮化合物的循环过程。 阻挡层具有降低的电阻率,较低的氟浓度,并且可以以任何期望的厚度(例如小于100埃)沉积以使阻挡层材料的量最小化。
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公开(公告)号:US07745329B2
公开(公告)日:2010-06-29
申请号:US12195263
申请日:2008-08-20
申请人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
发明人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
IPC分类号: H01L21/4763
CPC分类号: C23C16/45527 , C23C16/02 , C23C16/34 , C23C16/45525 , H01L21/28061 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L27/10861 , H01L28/60 , H01L29/4941 , H01L29/66181
摘要: In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.
摘要翻译: 在一个实施例中,提供了一种在衬底上形成钨阻挡材料的方法,其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体(例如乙硼烷或硅烷)来沉积钨层。 钨层的厚度可以为约或者更小,并且氮化钨层可以具有约380μΩ·cm-cm或更小的电阻率。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。
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公开(公告)号:US07429516B2
公开(公告)日:2008-09-30
申请号:US11532114
申请日:2006-09-15
申请人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
发明人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
IPC分类号: H01L21/336
CPC分类号: C23C16/45527 , C23C16/02 , C23C16/34 , C23C16/45525 , H01L21/28061 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L27/10861 , H01L28/60 , H01L29/4941 , H01L29/66181
摘要: In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.
摘要翻译: 在一个实施例中,提供了一种在衬底上形成钨阻挡材料的方法,其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体(例如乙硼烷或硅烷)来沉积钨层。 钨层的厚度可以为约或者更小,并且氮化钨层的电阻率可以为约380μΩ·cm以下。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。
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7.
公开(公告)号:US06833161B2
公开(公告)日:2004-12-21
申请号:US10084767
申请日:2002-02-26
申请人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
发明人: Shulin Wang , Ulrich Kroemer , Lee Luo , Aihua Chen , Ming Li
IPC分类号: C23C1614
CPC分类号: C23C16/45527 , C23C16/02 , C23C16/34 , C23C16/45525 , H01L21/28061 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L27/10861 , H01L28/60 , H01L29/4941 , H01L29/66181
摘要: A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.
摘要翻译: 提供了一种用于沉积氮化钨层的方法。 该方法包括在基材上交替吸附含钨化合物和含氮化合物的循环过程。 阻挡层具有降低的电阻率,较低的氟浓度,并且可以以任何期望的厚度(例如小于100埃)沉积以使阻挡层材料的量最小化。
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