摘要:
In a program circuit that can reduce exhaustion of a switching element that uses oxidation-reduction reactions of an electrolyte material, a voltage source (106) applies voltage to a switching element (100), a measurement circuit (107) measures a parameter that changes in accordance with the resistance value of the switching element (100), and a control circuit (104) causes the voltage source (106) to apply voltage to the switching element (100) while progressively increasing the voltage. The control circuit (104) further causes the voltage source (106) to halt the application of voltage when the parameter measured by the measurement circuit (107) reaches a prescribed value.
摘要:
Disclosed is a clock adjusting circuit comprising a phase shifter that receives a clock signal and variably shifts, based on a control signal, respective timing phases of a rising edge and a falling edge of the clock signal; and a control circuit that supplies the control signal to the phase shifter circuit before each edge is output; wherein the clock signal, in which at least one of a period, a duty ratio, jitter and skew/delay of the input clock signal is changed over an arbitrary number of clock cycles, is output.
摘要:
A clock recovery circuit includes a phase discriminating circuit for discriminating, at every edge of a received data signal, phase lead or phase lag of an identically directed edge of the clock signal, and outputting the phase discrimination signal; an edge detecting circuit for detecting edges of the received data signal, outputting an edge detection signal of a fixed pulse width, delaying the received data signal and outputting the delayed signal; an exclusive-OR gate for outputting, as an edge injection signal, an exclusive-OR signal between the phase discrimination signal and delayed signal; and a voltage-controlled oscillator for variably controlling frequency of ring oscillation, injecting the edge injection signal into the loop of ring oscillation, and outputting a clock signal locked to the received data signal.
摘要:
A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal.
摘要:
A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal.
摘要:
A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal. By varying the electrical conductivity of the switch element, the state of connection of the via with the wire of the first interconnection layer and the state of connection of the via with the wire of the second interconnection layer may be variably set to a shorted state, an open-circuited state or to an intermediate state A two-state switch element includes an ion conductor for conducting metal ions interposed between the first and second electrodes. The second electrode is formed of a material lower in reactivity than the first electrode. The electrical conductivity across the first and second electrodes is changed by the oxidation-reduction reaction of the metal ions. There are provided first and second transistors of opposite polarities, connected to the first electrode, and third and fourth transistors of opposite polarities, connected to the second electrode.
摘要:
In a program circuit that can reduce exhaustion of a switching element that uses oxidation-reduction reactions of an electrolyte material, a voltage source (106) applies voltage to a switching element (100), a measurement circuit (107) measures a parameter that changes in accordance with the resistance value of the switching element (100), and a control circuit (104) causes the voltage source (106) to apply voltage to the switching element (100) while progressively increasing the voltage. The control circuit (104) further causes the voltage source (106) to halt the application of voltage when the parameter measured by the measurement circuit (107) reaches a prescribed value.
摘要:
Disclosed is a clock adjusting circuit comprising a phase shifter that receives a clock signal and variably shifts, based on a control signal, respective timing phases of a rising edge and a falling edge of the clock signal; and a control circuit that supplies the control signal to the phase shifter circuit before each edge is output; wherein the clock signal, in which at least one of a period, a duty ratio, jitter and skew/delay of the input clock signal is changed over an arbitrary number of clock cycles, is output.
摘要:
A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal.
摘要:
A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal.