摘要:
Arrangements for inspecting a specimen on which plural patterns are formed; capturing a first image of a first area; capturing a second image of a second area in which patterns which are essentially the same with the patterns formed in the first area; creating data relating to corresponding pixels of the first and second images, for each pixel; determining a threshold for each pixel for detecting defects directly in accordance with the first and second images; and detecting defects on the specimen by processing the first and second images by using the threshold for each pixel and information of a scattered diagram of brightness of the first and second images, wherein the threshold is determined by using information of brightness of a local region of at least one of the first and second images, with the local region including an aimed pixel and peripheral pixels of the aimed pixel.
摘要:
Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.
摘要:
The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.
摘要:
A pattern inspection apparatus including: an image detecting part for detecting a digital image of an object substrate; a display having a screen on which the digital image of the object substrate and/or a distribution of defect candidates in a map form are displayable; an input device for inputting information of a non-inspection region to be masked on the object substrate by defining a region on the screen on which said distribution of defect candidates is displayed in a map form; a memory part for storing coordinate data, pattern data or feature quantity data of the non-inspection region to be masked on the object substrate inputted on the screen by the input device; and a defect judging part in which the digital image detected by the image detecting part is examined in a state that a region matching with a condition stored in the memory part is masked and a defect is detected in a region other than said masked region.