DEFECT INSPECTION METHOD AND APPARATUS
    1.
    发明申请
    DEFECT INSPECTION METHOD AND APPARATUS 有权
    缺陷检查方法和装置

    公开(公告)号:US20110170765A1

    公开(公告)日:2011-07-14

    申请号:US13072102

    申请日:2011-03-25

    IPC分类号: G06K9/00

    摘要: Arrangements for inspecting a specimen on which plural patterns are formed; capturing a first image of a first area; capturing a second image of a second area in which patterns which are essentially the same with the patterns formed in the first area; creating data relating to corresponding pixels of the first and second images, for each pixel; determining a threshold for each pixel for detecting defects directly in accordance with the first and second images; and detecting defects on the specimen by processing the first and second images by using the threshold for each pixel and information of a scattered diagram of brightness of the first and second images, wherein the threshold is determined by using information of brightness of a local region of at least one of the first and second images, with the local region including an aimed pixel and peripheral pixels of the aimed pixel.

    摘要翻译: 用于检查形成多个图案的样本的布置; 捕获第一区域的第一图像; 捕获与形成在第一区域中的图案基本上相同的图案的第二区域的第二图像; 为每个像素创建与第一和第二图像的相应像素有关的数据; 根据第一和第二图像确定用于检测缺陷的每个像素的阈值; 以及通过使用每个像素的阈值和第一和第二图像的亮度的散射图的信息来处理第一和第二图像来检测样本上的缺陷,其中,通过使用第一和第二图像的局部区域的亮度的信息来确定阈值 第一和第二图像中的至少一个,其中局部区域包括目标像素和目标像素的外围像素。

    METHOD AND APPARATUS FOR MEASURING DIMENSION USING ELECTRON MICROSCOPE
    2.
    发明申请
    METHOD AND APPARATUS FOR MEASURING DIMENSION USING ELECTRON MICROSCOPE 有权
    使用电子显微镜测量尺寸的方法和装置

    公开(公告)号:US20090224152A1

    公开(公告)日:2009-09-10

    申请号:US12326544

    申请日:2008-12-02

    IPC分类号: G01N23/00 G06K9/46

    CPC分类号: G06T7/74 G06T2207/30148

    摘要: Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.

    摘要翻译: 公开了一种用于实现需要通过低S / N信号波形测量尺寸的样品(例如ArF曝光光致抗蚀剂)的高精度尺寸测量的扫描电子显微镜(SEM)。 为此,预先登记从维度测量目标样本和相同种类的样本材料获取的样本信号波形(或图像)的部分波形(或部分图像),测量目标信号波形(或图像) 从尺寸测量目标样本和样本登记波形中获得的尺寸测量目标图案的尺寸基于组合结果被计算。

    CHARGED PARTICEL BEAM APPARATUS AND METHODS FOR CAPTURING IMAGES USING THE SAME
    3.
    发明申请
    CHARGED PARTICEL BEAM APPARATUS AND METHODS FOR CAPTURING IMAGES USING THE SAME 有权
    充电的束光束装置和使用该图像捕获图像的方法

    公开(公告)号:US20110133080A1

    公开(公告)日:2011-06-09

    申请号:US12898455

    申请日:2010-10-05

    IPC分类号: G01N23/225

    摘要: The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

    摘要翻译: 本发明提供一种用于测量捕获用于测量的图像的半导体装置等的微尺寸(CD值)的带电粒子束装置。 对于本发明,使用用于校准的样品,其上在视场中排列有通过晶体各向异性蚀刻技术产生的表面上具有已知角度的多个多面体结构物体。 基于每个多面体结构物体的图像上的几何变形来计算视野内的每个位置处的束着陆角。 用于均衡视场内每个位置的束着陆角的光束控制参数被预先注册。 当进行尺寸测量时,根据待测图案的位置在观察区域中应用登记的光束控制参数。 因此,本发明提供了减少相对于具有相同束着陆角的样品的电子束着角的变化引起的CD值的变化的方法,以及用于减少由电子差异引起的仪器误差的方法 设备之间的束着陆角度。