DIAGNOSTIC REAGENT FOR CROHN'S DISEASE
    3.
    发明申请
    DIAGNOSTIC REAGENT FOR CROHN'S DISEASE 审中-公开
    CROHN病的诊断试剂

    公开(公告)号:US20120058497A1

    公开(公告)日:2012-03-08

    申请号:US13225087

    申请日:2011-09-02

    IPC分类号: G01N33/566 C07K14/415

    CPC分类号: G01N33/6893 G01N2800/065

    摘要: The present invention provides a reagent and a method of safely, conveniently, and specifically diagnosing Crohn's disease. Provided are a diagnostic method for Crohn's disease in a subject, including measuring antibodies against one kind or more of dietary components selected from the group consisting of grapefruit, alfalfa, avocado, cabbage, green pepper, lettuce, onion, potato (white), spinach, tomato, oat, pecan, yeast, cane sugar, celery, buckwheat, corn, rice and soy, and a diagnostic reagent or kit for Crohn's disease, containing the above-mentioned preparation of a dietary component.

    摘要翻译: 本发明提供一种安全,方便,具体诊断克罗恩病的试剂和方法。 本发明提供了一种对受试者的克罗恩病的诊断方法,包括测定针对一种或多种选自以下的膳食成分的抗体:葡萄柚,苜蓿,鳄梨,卷心菜,青椒,莴苣,洋葱,马铃薯(白色),菠菜 ,番茄,燕麦,山核桃,酵母,蔗糖,芹菜,荞麦,玉米,水稻和大豆,以及用于克罗恩病的诊断试剂或试剂盒,其含有上述膳食成分的制备。

    TRANSISTOR, AND DISPLAY DEVICE, ELECTRONIC DEVICE, AND SEMICONDUCTOR DEVICE USING THE SAME
    4.
    发明申请
    TRANSISTOR, AND DISPLAY DEVICE, ELECTRONIC DEVICE, AND SEMICONDUCTOR DEVICE USING THE SAME 有权
    晶体管和显示器件,电子器件和使用其的半导体器件

    公开(公告)号:US20110033990A1

    公开(公告)日:2011-02-10

    申请号:US12908521

    申请日:2010-10-20

    IPC分类号: H01L21/84

    摘要: It is an object of an invention disclosed in the present specification to provide a transistor having low contact resistance. In the transistor, a semiconductor film including an impurity element imparting P-type or N-type conductivity, an insulating film formed thereover, and an electrode or a wiring that is electrically connected to the semiconductor film through a contact hole formed at least in the insulating film are included; the semiconductor film has a first range of a concentration of the impurity element (1×1020/cm3 or less) that is included in a deeper region than predetermined depth, and a second range of a concentration of the impurity element (more than 1×1020/cm3) that is included in a shallower region than the predetermined depth; and a deeper region than a portion in contact with the electrode or the wiring in the semiconductor film is in the first range of the concentration of the impurity element.

    摘要翻译: 本说明书中公开的发明的目的是提供具有低接触电阻的晶体管。 在晶体管中,包括赋予P型或N型导电性的杂质元素的半导体膜,形成在其上的绝缘膜,以及电极或布线,其通过至少形成在所述半导体膜上的接触孔与半导体膜电连接 包括绝缘膜; 半导体膜具有包含在比预定深度更深的区域中的杂质元素的浓度的第一范围(1×10 20 / cm 3以下),并且杂质元素的浓度的第二范围(大于1× 1020 / cm3),其被包括在比预定深度更浅的区域中; 并且比半导体膜中与电极或布线接触的部分更深的区域在杂质元素的浓度的第一范围内。