公开(公告)号：US20110212363A1

公开(公告)日：2011-09-01

申请号：US13033877

申请日：2011-02-24

申请人： Shunpei YAMAZAKI ,  Tamae MORIWAKA ,  Kazutaka KURIKI ,  Mikio YUKAWA

发明人： Shunpei YAMAZAKI ,  Tamae MORIWAKA ,  Kazutaka KURIKI ,  Mikio YUKAWA

IPC分类号： H01M10/26 ,  H01G9/00 ,  H01M4/48 ,  H01M4/505 ,  H01G9/042 ,  H01M4/26 ,  B82Y99/00

CPC分类号： H01G11/26 ,  H01G11/28 ,  H01G11/32 ,  H01G11/46 ,  H01M4/131 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/587 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/0561 ,  H01M2004/021 ,  Y02E60/13 ,  Y10T29/417 ,  Y10T29/49108 ,  Y10T29/49115

摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.

摘要翻译： 本发明涉及一种蓄电系统，其包括负极，该负极具有在集电体的表面上设置为负极活性物质的结晶硅膜，并且在结晶硅膜的表层部分中含有导电氧化物。 或者，本发明涉及一种用于制造蓄电系统的方法，其包括在集电器上形成非晶硅膜的步骤，将非晶硅的结晶的催化元素添加到非晶硅的表面上 加热非晶硅膜，加入催化剂元素使非晶硅膜结晶，从而形成结晶硅膜，并使用结晶硅膜作为负极活性物质层。

公开(公告)号：US20110236753A1

公开(公告)日：2011-09-29

申请号：US13044172

申请日：2011-03-09

申请人： Kazutaka KURIKI ,  Tamae MORIWAKA

发明人： Kazutaka KURIKI ,  Tamae MORIWAKA

IPC分类号： H01M4/58 ,  H01M4/26

CPC分类号： H01M4/134 ,  H01M4/0428 ,  H01M4/0471 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/661 ,  H01M4/662 ,  H01M4/667 ,  Y10T29/49108 ,  Y10T29/49115

摘要： A secondary battery to be provided includes an electrode including silicon or a silicon compound, and the electrode includes, for example, a current collector formed using metal and a silicon film as an active material provided over the current collector. The hydrogen concentration in the silicon film of the electrode may be higher than or equal to 1.0×1018 cm−3 and lower than or equal to 1.0×1021 cm−3. Such a silicon film is formed over a current collector by a plasma CVD method or the like for example, and hydrogen is contained as little as possible in the silicon film, which is preferable. In order to contain hydrogen as little as possible in the silicon film, the silicon film may be formed over the current collector under a high temperature environment.

摘要翻译： 要提供的二次电池包括含硅或硅化合物的电极，并且该电极包括例如使用金属形成的集电体和设置在集电体上的活性材料的硅膜。 电极的硅膜中的氢浓度可以高于或等于1.0×1018cm-3且小于或等于1.0×1021cm-3。 这样的硅膜例如通过等离子体CVD法等在集电体上形成，并且在硅膜中尽可能少地含有氢，这是优选的。 为了在硅膜中尽可能少地含有氢，可以在高温环境下在集电体上形成硅膜。

公开(公告)号：US20110236754A1

公开(公告)日：2011-09-29

申请号：US13050978

申请日：2011-03-18

申请人： Kazutaka KURIKI ,  Tamae MORIWAKA ,  Satoshi MURAKAMI

发明人： Kazutaka KURIKI ,  Tamae MORIWAKA ,  Satoshi MURAKAMI

IPC分类号： H01M4/134 ,  H01M4/1395

CPC分类号： H01M4/134 ,  H01M4/0428 ,  H01M4/0471 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/661 ,  H01M4/662 ,  H01M4/667 ,  Y10T29/49108 ,  Y10T29/49115

摘要： An object is to provide a secondary battery having excellent charge-discharge cycle characteristics. A secondary battery including an electrode containing silicon or a silicon compound is provided, in which the electrode is provided with a layer containing silicon or a silicon compound over a layer of a metal material; a mixed layer of the metal material and the silicon is provided between the metal material layer and the layer containing silicon or a silicon compound; the metal material has higher oxygen affinity than that of ions which give and receive electric charges in the secondary battery; and an oxide of the metal material does not have an insulating property. The ions which give and receive electric charges are alkali metal ions or alkaline earth metal ions.

摘要翻译： 目的在于提供具有优异的充放电循环特性的二次电池。 提供了包括含有硅或硅化合物的电极的二次电池，其中电极在金属材料层上设置有含硅或硅化合物的层; 在金属材料层和含硅或硅化合物的层之间设置金属材料和硅的混合层; 金属材料具有比在二次电池中产生和接收电荷的离子更高的氧亲和力; 金属材料的氧化物不具有绝缘性。 产生和接收电荷的离子是碱金属离子或碱土金属离子。

公开(公告)号：US20110300445A1

公开(公告)日：2011-12-08

申请号：US13111079

申请日：2011-05-19

申请人： Satoshi MURAKAMI ,  Kazutaka KURIKI ,  Mikio YUKAWA

发明人： Satoshi MURAKAMI ,  Kazutaka KURIKI ,  Mikio YUKAWA

IPC分类号： H01M4/58 ,  C23C16/24 ,  H01G9/00 ,  H01M4/1395 ,  H01G9/042

CPC分类号： H01G11/24 ,  C23C16/24 ,  H01G11/30 ,  H01G11/46 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/48 ,  H01M4/52 ,  H01M4/661 ,  H01M10/0525 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7022 ,  Y10T29/417 ,  Y10T29/49115

摘要： A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.

摘要翻译： 能够提高放电容量等改善性能的蓄电装置，由于活性物质层等的剥离而导致的劣化难以发生，并且提供了蓄电装置的制造方法。 蓄电装置包括集电体，在集电体上形成的混合层，以及形成在混合层上并用作活性物质层的晶体硅层。 结晶硅层包括晶体硅区域和晶须状晶体硅区域，其包括在结晶硅区域上突出的多个突起。 晶须状结晶硅区域包括具有弯曲或分支部分的突起。

公开(公告)号：US20110294011A1

公开(公告)日：2011-12-01

申请号：US13109083

申请日：2011-05-17

申请人： Kazutaka KURIKI ,  Mikio YUKAWA

发明人： Kazutaka KURIKI ,  Mikio YUKAWA

IPC分类号： H01M4/58 ,  B05D5/12 ,  H01M4/04 ,  H01G9/00 ,  H01G9/04

CPC分类号： H01G11/26 ,  H01G11/30 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/661 ,  Y02E60/13

摘要： An energy storage device is provided in which a discharge capacity can be high and/or in which degradation of an electrode due to repetitive charge and discharge can be reduced. An electrode of the energy storage device which includes a crystalline silicon layer serving as an active material layer is provided. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region having a plurality of protrusions projected upward from the crystalline silicon region. The protrusions include a first protrusion and a second protrusion; the second protrusion has a larger length along the axis and a sharper tip than the first protrusion.

摘要翻译： 提供了一种放电容量可以较高的能量存储装置和/或能够减少由于重复充放电导致的电极劣化的能量存储装置。 提供了包含作为活性物质层的结晶硅层的储能装置的电极。 晶体硅层包括晶体硅区域和具有从晶体硅区域向上突出的多个突起的晶须状结晶硅区域。 突起包括第一突起和第二突起; 所述第二突起沿着所述轴线具有较大的长度，并且比所述第一突起更尖锐。

公开(公告)号：US20110294005A1

公开(公告)日：2011-12-01

申请号：US13102645

申请日：2011-05-06

申请人： Kazutaka KURIKI ,  Mikio YUKAWA ,  Hideki MATSUKURA

发明人： Kazutaka KURIKI ,  Mikio YUKAWA ,  Hideki MATSUKURA

IPC分类号： H01M4/02

CPC分类号： H01M4/661 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/667 ,  H01M4/70 ,  H01M10/0525 ,  Y02T10/7011

摘要： An object is to improve characteristics of a power storage device by devising the shape of an active material layer. The characteristics of the power storage device can be improved by providing a power storage device including a first electrode, a second electrode, and an electrolyte provided between the first electrode and the second electrode. The second electrode includes an active material layer. The active material layer includes a plurality of projecting portions containing an active material and a plurality of particles containing an active material, which are arranged over the plurality of projecting portions or in a space between the plurality of projecting portions.

摘要翻译： 目的是通过设计活性物质层的形状来改善蓄电装置的特性。 通过提供包括第一电极，第二电极和设置在第一电极和第二电极之间的电解质的电力存储装置，能够提高蓄电装置的特性。 第二电极包括活性物质层。 活性物质层包括多个突出部分，其包含活性材料和多个含有活性材料的颗粒，其布置在多个突出部分上或多个突出部分之间的空间中。

公开(公告)号：US20110266654A1

公开(公告)日：2011-11-03

申请号：US13088592

申请日：2011-04-18

申请人： Kazutaka KURIKI ,  Mikio YUKAWA ,  Yuji ASANO

发明人： Kazutaka KURIKI ,  Mikio YUKAWA ,  Yuji ASANO

IPC分类号： H01L29/02 ,  H01L21/02

CPC分类号： H01M4/386 ,  C30B25/005 ,  C30B29/06 ,  C30B29/62 ,  C30B33/02 ,  H01G11/06 ,  H01G11/22 ,  H01G11/26 ,  H01G11/28 ,  H01G11/30 ,  H01G11/46 ,  H01G11/50 ,  H01G11/68 ,  H01G11/70 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L28/82 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/382 ,  H01M4/661 ,  H01M4/667 ,  H01M10/0525 ,  H01M10/0569 ,  H01M10/0583 ,  H01M12/08 ,  H01M2300/0037 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7022

摘要： Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.

摘要翻译： 提供一种蓄电装置的制造方法，其中通过低压CVD法在集电体上形成包括晶须状结晶硅区域的结晶硅层作为活性物质层，其中使用沉积物进行加热 含硅气体。 蓄电装置包括集电体，在集电体上形成的混合层，以及用作在混合层上形成的活性物质层的结晶硅层。 晶体硅层包括晶体硅区域和晶须状结晶硅区域，其包括在晶体硅区域上突出的多个突起。 利用突起，可以增加用作活性物质层的结晶硅层的表面积。

公开(公告)号：US20090098739A1

公开(公告)日：2009-04-16

申请号：US12244414

申请日：2008-10-02

申请人： Hideto OHNUMA ,  Takashi SHINGU ,  Tetsuya KAKEHATA ,  Kazutaka KURIKI ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Takashi SHINGU ,  Tetsuya KAKEHATA ,  Kazutaka KURIKI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/31

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate.

摘要翻译： 本发明的目的是提供一种制造具有半导体层的SOI衬底的方法，即使在使用诸如玻璃衬底的上限温度低的衬底的情况下也可以使用。 制造方法损害了制备其表面上形成有接合层的半导体衬底和从其表面形成在预定深度的分离层的步骤，将接合层粘合到具有700°的变形点的基底 C.或更低，使得半导体衬底和基底基板彼此面对，并且通过热处理在分离层处分离半导体衬底的一部分，以在基底衬底上形成单晶半导体层。 在制造方法中，使用至少通过热处理各向同性收缩的基板作为基底。

公开(公告)号：US20110053358A1

公开(公告)日：2011-03-03

申请号：US12860175

申请日：2010-08-20

申请人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

发明人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/20

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78696

摘要： An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

摘要翻译： 本发明的一个实施例的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜（例如，微晶半导体膜）的制造技术。 在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极与第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

公开(公告)号：US20120141866A1

公开(公告)日：2012-06-07

申请号：US13307045

申请日：2011-11-30

申请人： Kazutaka KURIKI ,  Nobuhiro Inoue ,  Kiyofumi Ogino

发明人： Kazutaka KURIKI ,  Nobuhiro Inoue ,  Kiyofumi Ogino

IPC分类号： H01M4/66 ,  H01M10/02 ,  H01G9/032

CPC分类号： H01M4/366 ,  H01G11/06 ,  H01G11/50 ,  H01G11/68 ,  H01G11/72 ,  H01M4/382 ,  H01M4/386 ,  H01M4/661 ,  H01M10/0525 ,  H01M10/0562 ,  H01M2004/027 ,  Y02E60/122 ,  Y02E60/13 ,  Y02T10/7022

摘要： A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.

摘要翻译： 提供了一种具有改善的性能的蓄电装置，例如较高的放电容量，并且由于活性材料层的剥离等而导致的劣化不大可能。 在蓄电装置的电极中，作为可与锂合金化的材料，在集电体上使用磷掺杂非晶硅作为活性物质层，在活性物质层上沉积氧化铌作为含有铌的层 。 因此，能够提高蓄电装置的容量，能够提高循环特性和充放电效率。