SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20120211874A1

    公开(公告)日:2012-08-23

    申请号:US13461249

    申请日:2012-05-01

    IPC分类号: H01L29/02

    摘要: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

    摘要翻译: 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法,并且不仅使表面积小的层被剥离,而且还允许具有大表面积的被剥离层 要完全去皮。 此外,本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地,目的是将由TFT表示的各种元素(薄膜二极管,包含硅的PIN结的光电转换元件或硅电阻元件)粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, DELAMINATION METHOD, AND TRANSFERRING METHOD
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, DELAMINATION METHOD, AND TRANSFERRING METHOD 有权
    半导体器件及其制造方法,分层方法和传输方法

    公开(公告)号:US20100248402A1

    公开(公告)日:2010-09-30

    申请号:US12766318

    申请日:2010-04-23

    IPC分类号: H01L21/30 H01L31/18 H01L33/00

    摘要: A technique for forming a TFT element over a substrate having flexibility typified by a flexible plastic film is tested. When a structure in which a light-resistant layer or a reflective layer is employed to prevent the damage to the delamination layer, it is difficult to fabricate a transmissive liquid crystal display device or a light emitting device which emits light downward.A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

    摘要翻译: 测试了以柔性塑料膜为代表的柔性基板上形成TFT元件的技术。 当采用耐光层或反射层来防止对分层的损害的结构时,难以制造向下发光的透射型液晶显示装置或发光装置。 在基板上形成金属膜的状态下,通过物理手段或机械装置分离基板和分层膜,以及包含包含金属的氧化物膜和包含硅的膜的分层,其形成在 提供金属膜。 具体地说,通过在金属膜上形成包含金属的氧化物层而获得的TFT; 通过热处理使氧化层结晶; 并且在氧化物层的一层或氧化物层的界面上形成分层。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20090275196A1

    公开(公告)日:2009-11-05

    申请号:US12480752

    申请日:2009-06-09

    IPC分类号: H01L21/283

    摘要: (Object)It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof. (Solving Means) When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.

    摘要翻译: (对象)本发明的目的是提供一种不会对被剥离层造成损害的剥离方法,并且不仅允许以小的表面积剥离层,而且还可以使用剥离层 大的表面积要完全剥离。 此外,本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地,目的是将由TFT表示的各种元素(薄膜二极管,包含硅的PIN结的光电转换元件或硅电阻元件)粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。 (解决方案)当在基板上设置金属层11时,设置与金属层11接触的氧化物层12,形成被剥离层13,并且用激光束照射金属层11 进行氧化并形成金属氧化物层16,通过金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面,可以进行清晰的分离。