公开(公告)号：US20120164761A1

公开(公告)日：2012-06-28

申请号：US13336356

申请日：2011-12-23

申请人： Shunpei YAMAZAKI ,  Yasuyuki ARAI ,  Naoto KUSUMOTO

发明人： Shunpei YAMAZAKI ,  Yasuyuki ARAI ,  Naoto KUSUMOTO

IPC分类号： H01L21/66

CPC分类号： H01L51/56 ,  H01L27/3204 ,  H01L51/5268 ,  H01L51/5275 ,  H01L2251/5361 ,  H01L2251/5392 ,  H01L2251/568

摘要： An object is to provide a method for manufacturing a lighting device, in which a problem of a short circuit between an upper electrode and a lower electrode of a light-emitting element is solved without reducing a light-emitting property of a normal portion of the light-emitting element to the utmost. In a light-emitting element including an upper electrode, an electroluminescent layer, and a lower electrode, a short-circuited portion that is undesirably formed between the upper electrode and the lower electrode is irradiated with a laser beam, whereby a region where the short-circuited portion is removed is formed, and then the region is filled with an insulating resin having a light-transmitting property. Thus, the problem of the short circuit between the upper electrode and the lower electrode is solved and yield of a lighting device is improved.

摘要翻译： 本发明的目的是提供一种照明装置的制造方法，其中解决了发光元件的上部电极和下部电极之间的短路问题，而不会降低发光元件的正常部分的发光特性 发光元件最大。 在包括上电极，电致发光层和下电极的发光元件中，用激光束照射不希望地形成在上电极和下电极之间的短路部分，由此短路的区域 形成去除的部分，然后用具有透光性的绝缘树脂填充该区域。 因此，解决了上电极和下电极之间短路的问题，并且提高了照明装置的产量。

公开(公告)号：US20110308935A1

公开(公告)日：2011-12-22

申请号：US13159602

申请日：2011-06-14

申请人： Shunpei YAMAZAKI ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Yasuyuki ARAI

IPC分类号： B05D5/12 ,  C23C14/35

CPC分类号： C23C16/40 ,  C23C14/0676 ,  C23C14/3414 ,  H01G11/50 ,  H01G11/86 ,  H01M4/0428 ,  H01M10/052 ,  H01M10/058 ,  Y02E60/122 ,  Y02P70/54

摘要： An object is to provide a method of manufacturing a lithium-ion secondary battery suitable for mass production. A lithium-ion secondary battery is manufactured in such a manner that a positive electrode layer is formed on a base including a plane by chemical vapor deposition which is specifically metal-organic chemical vapor deposition, an electrolyte layer is formed on the positive electrode layer, and a negative electrode layer is formed on the electrolyte layer. The positive electrode layer is formed with a MOCVD apparatus. The MOCVD apparatus is an apparatus with which a liquid or a solid of an organic metal raw material is vaporized to produce a gas and the gas is reacted to undergo pyrolysis so that a film is formed. By forming all the layers using sputtering, evaporation, or chemical vapor deposition, a solid lithium-ion secondary battery can also be realized.

摘要翻译： 本发明的目的是提供一种适合于批量生产的锂离子二次电池的制造方法。 以这样的方式制造锂离子二次电池，即通过特别是金属有机化学气相沉积的化学气相沉积在包括平面的基底上形成正极层，在正极层上形成电解质层， 在电解质层上形成负极层。 正极层由MOCVD装置形成。 MOCVD装置是将有机金属原料的液体或固体蒸发以产生气体并使气体反应进行热分解从而形成膜的装置。 通过使用溅射，蒸发或化学气相沉积形成所有层，也可以实现固体锂离子二次电池。

公开(公告)号：US20110057628A1

公开(公告)日：2011-03-10

申请号：US12945228

申请日：2010-11-12

申请人： Shunpei YAMAZAKI ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Yasuyuki ARAI

IPC分类号： H02J17/00 ,  H02J7/00

CPC分类号： H01L27/0629 ,  H01Q1/36 ,  H01Q1/38 ,  H01Q7/00 ,  H01Q9/285 ,  H02J7/025 ,  H02J17/00 ,  H02J50/10 ,  H02J50/27 ,  H02J50/50

摘要： In the field of portable electronic devices in the future, portable electronic devices will be desired, which are smaller and more lightweight and can be used for a long time period by one-time charging, as apparent from provision of one-segment partial reception service “1-seg” of terrestrial digital broadcasting that covers the mobile objects such as a cellular phone. Therefore, the need for a power storage device is increased, which is small and lightweight and capable of being charged without receiving power from commercial power. The power storage device includes an antenna for receiving an electromagnetic wave, a capacitor for storing power, and a circuit for controlling store and supply of the power. When the antenna, the capacitor, and the control circuit are integrally formed and thinned, a structural body formed of ceramics or the like is partially used. A circuit for storing power of an electromagnetic wave received at the antenna in a capacitor and a control circuit for arbitrarily discharging the stored power are provided, whereby lifetime of the power storage device can be extended.

摘要翻译： 在将来的便携式电子设备领域中，期望便携式电子设备更小，更轻便，并且可以通过一次性充电长时间使用，从提供单段部分接收服务 涵盖诸如蜂窝电话的移动物体的地面数字广播的“1-seg”。 因此，增加对电力存储装置的需求，其小而轻，并且能够在不从商业电力接收电力的情况下进行充电。 蓄电装置包括用于接收电磁波的天线，用于存储电力的电容器和用于控制电力的存储和供给的电路。 当天线，电容器和控制电路整体形成和变薄时，部分地使用由陶瓷等构成的结构体。 提供一种用于存储电容器中的天线接收的电磁波的电力的电路和用于任意放电所存储的电力的控制电路，由此可以延长蓄电装置的寿命。

公开(公告)号：US20110027980A1

公开(公告)日：2011-02-03

申请号：US12904181

申请日：2010-10-14

申请人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Yoshitaka MORIYA ,  Kazuko IKEDA ,  Yoshifumi TANADA ,  Shuhei TAKAHASHI

发明人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Yoshitaka MORIYA ,  Kazuko IKEDA ,  Yoshifumi TANADA ,  Shuhei TAKAHASHI

IPC分类号： H01L21/768

CPC分类号： H01L29/42368 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/7881

摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.

摘要翻译： 半导体器件具有半导体层，覆盖半导体层的端部的栅电极和用于使半导体层和栅电极绝缘的绝缘层。 使半导体层的端部与栅电极重叠的区域绝缘的绝缘层的膜厚比覆盖半导体层的中心部的绝缘层的膜厚厚。

公开(公告)号：US20080203477A1

公开(公告)日：2008-08-28

申请号：US12027815

申请日：2008-02-07

申请人： Shunpei YAMAZAKI ,  Ikuko KAWAMATA ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Ikuko KAWAMATA ,  Yasuyuki ARAI

IPC分类号： H01L29/786

CPC分类号： H01L27/1233 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11534 ,  H01L27/11546 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1237 ,  H01L29/66825 ,  H01L29/7881

摘要： Plural kinds of thin film transistors having different film thicknesses of semiconductor layers are provided over a substrate having an insulating surface. A channel formation region of semiconductor layer in a thin film transistor for which high speed operation is required is made thinner than a channel formation region of a semiconductor layer of a thin film transistor for which high withstand voltage is required. A gate insulating layer of the thin film transistor for which high speed operation is required may be thinner than a gate insulating layer of the thin film transistor for which high withstand voltage is required.

摘要翻译： 在具有绝缘表面的基板上设置具有不同膜厚的半导体层的多种薄膜晶体管。 要求高速运行的薄膜晶体管中的半导体层的沟道形成区域比需要高耐压的薄膜晶体管的半导体层的沟道形成区域薄。 需要高速运行的薄膜晶体管的栅极绝缘层可以比要求高耐压的薄膜晶体管的栅极绝缘层更薄。

公开(公告)号：US20080188050A1

公开(公告)日：2008-08-07

申请号：US12059652

申请日：2008-03-31

申请人： Keiichi SEKIGUCHI ,  Junichi KOEZUKA ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

发明人： Keiichi SEKIGUCHI ,  Junichi KOEZUKA ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/336

CPC分类号： H01L27/1214 ,  H01L27/1203 ,  H01L27/127 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

摘要： The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is provided; an impurity is added to a part of a first region overlapped with the gate electrode with the gate insulating film therebetween in the active layer and a second region but the first region in the active layer by adding the impurity to the active layer from one oblique direction; and the second region is situated in the one direction relative to the first region.

摘要翻译： 本发明提供了一种制造半导体器件的方法，通过该方法，提供了包括有源层，与有源层接触的栅极绝缘膜和与有源层重叠的栅极与其间的栅极绝缘膜的晶体管。 在有源层和第二区域之间，与栅电极重叠的第一区域的一部分添加杂质，而通过从有源层向一个倾斜方向添加杂质，而在有源层中添加杂质 ; 并且第二区域相对于第一区域位于一个方向上。

公开(公告)号：US20080179597A1

公开(公告)日：2008-07-31

申请号：US12013796

申请日：2008-01-14

申请人： Shunpei YAMAZAKI ,  Ikuko KAWAMATA ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Ikuko KAWAMATA ,  Yasuyuki ARAI

IPC分类号： H01L33/00

CPC分类号： H01L27/12 ,  G02F1/1345 ,  G02F1/13454 ,  H01L27/1233 ,  H01L29/78621

摘要： It is an object to provide a display device including a thin film transistor which can operate at high speed and is driven at a low voltage in a drive circuit region, and a thin film transistor having high voltage-resistance and high reliability in a pixel region. Accordingly, it is an object to provide a high reliable display device which consumes less power. A display device including a pixel region and a drive circuit region over a substrate having an insulating surface is provided. A thin film transistor is provided in each of the pixel region and the drive circuit region. A channel formation region in a semiconductor layer of the thin film transistor provided in the drive circuit region is formed to be locally thin, and the thickness of the channel formation region is smaller than that in the pixel region.

摘要翻译： 本发明的目的是提供一种显示装置，其包括可以在驱动电路区域中以高速操作并以低电压驱动的薄膜晶体管，以及在像素区域中具有高电压和高可靠性的薄膜晶体管 。 因此，本发明的目的是提供一种消耗较少功率的高可靠性显示装置。 提供一种显示装置，其包括具有绝缘表面的基板上的像素区域和驱动电路区域。 在像素区域和驱动电路区域的每一个中设置薄膜晶体管。 设置在驱动电路区域中的薄膜晶体管的半导体层中的沟道形成区域局部变薄，并且沟道形成区域的厚度小于像素区域中的沟道形成区域。

公开(公告)号：US20120112192A1

公开(公告)日：2012-05-10

申请号：US13289467

申请日：2011-11-04

申请人： Shunpei YAMAZAKI ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Yasuyuki ARAI

IPC分类号： H01L29/786

CPC分类号： H01L27/0629 ,  H01Q1/36 ,  H01Q1/38 ,  H01Q7/00 ,  H01Q9/285 ,  H02J7/025 ,  H02J17/00 ,  H02J50/10 ,  H02J50/27 ,  H02J50/50

摘要： A semiconductor device comprises a thin film transistor provided over a substrate having an insulating surface, and an electrode penetrating the substrate. The thin film transistor is provided between a first structural body and a second structural body, which has a higher rigidity than the first structural body, which serve as protectors because the structural bodies have resistance to a pressing force such as a tip of a pen or bending stress applied from outside so malfunction due to the pressing force and the bending stress can be prevented.

摘要翻译： 半导体器件包括设置在具有绝缘表面的衬底上的薄膜晶体管和穿透衬底的电极。 薄膜晶体管设置在第一结构体和第二结构体之间，该第一结构体和第二结构体具有比第一结构体更高的刚性，其作为保护器，因为结构体具有抵抗诸如笔的尖端的按压力 可以防止从外部施加的弯曲应力，由于压力和弯曲应力而导致的故障。

公开(公告)号：US20110039402A1

公开(公告)日：2011-02-17

申请号：US12848594

申请日：2010-08-02

申请人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Takayuki INOUE ,  Erumu KIKUCHI

发明人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Takayuki INOUE ,  Erumu KIKUCHI

IPC分类号： H01L21/20

CPC分类号： H01L21/02595 ,  C23C16/24 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method.

摘要翻译： 制造具有高结晶度的微晶半导体膜。 此外，以高生产率制造具有优异的电特性和高可靠性的薄膜晶体管，以及包括薄膜晶体管的显示装置。 从设置在等离子体CVD装置的处理室中的多个突出部的电极引入含有硅或锗的沉积气体，通过供给高频电力而产生辉光放电，由此在基板上形成晶体粒子， 并且通过等离子体CVD法在晶体颗粒上形成微晶半导体膜。

公开(公告)号：US20110030783A1

公开(公告)日：2011-02-10

申请号：US12848357

申请日：2010-08-02

申请人： Shunpei YAMAZAKI ,  Yasuyuki ARAI ,  Satohiro OKAMOTO

发明人： Shunpei YAMAZAKI ,  Yasuyuki ARAI ,  Satohiro OKAMOTO

IPC分类号： H01L31/036 ,  H01L31/042 ,  H01L31/18

CPC分类号： H01L31/035209 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548

摘要： To provide a photoelectric conversion device whose characteristics are sufficiently improved. The photoelectric conversion device includes: a first electrode; a unit cell having a semiconductor layer exhibiting a first conductivity type, a semiconductor layer having an effect of photoelectric conversion, and a semiconductor layer exhibiting a second conductivity type; and a second electrode. In the semiconductor layer having an effect of photoelectric conversion, crystal grains each grain diameter of which is smaller than a thickness of the semiconductor layer having an effect of photoelectric conversion are aligned in the thickness direction of the semiconductor layer having an effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type.

摘要翻译： 提供其特性得到充分改善的光电转换装置。 光电转换装置包括：第一电极; 具有表现出第一导电类型的半导体层的单元电池，具有光电转换效果的半导体层和表现出第二导电类型的半导体层; 和第二电极。 在具有光电转换效果的半导体层中，其粒径小于具有光电转换效果的半导体层的厚度的晶粒在具有光电转换效果的半导体层的厚度方向上排列 对具有第二导电类型的半导体层表现出第一导电类型的半导体层。