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    Semiconductor device and method for manufacturing semiconductor device
    1.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权
    半导体装置及半导体装置的制造方法

    公开(公告)号：US08629441B2

    公开(公告)日：2014-01-14

    申请号：US12848389

    申请日：2010-08-02

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Tatsuya Takahashi

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Tatsuya Takahashi

    IPC分类号： H01L29/10

    CPC分类号： H01L27/3262 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/32 ,  H01L27/3248 ,  H01L29/45

    摘要： The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.

    摘要翻译： 半导体器件包括驱动电路，该驱动电路包括第一薄膜晶体管和在一个衬底上包括第二薄膜晶体管的像素。 第一薄膜晶体管包括第一栅极电极层，栅极绝缘层，第一氧化物半导体层，第一氧化物导电层，第二氧化物导电层，与第一氧化物半导体的一部分接触的氧化物绝缘层 并且与第一和第二氧化物导电层的周边和侧表面接触，第一源极电极层和第一漏极电极层。 第二薄膜晶体管包括使用透光材料形成的第二栅极电极层，第二氧化物半导体层以及第二源电极层和第二漏极电极层。

    Oxide semiconductor, thin film transistor, and display device
    2.
    发明授权
    Oxide semiconductor, thin film transistor, and display device 有权
    氧化物半导体，薄膜晶体管和显示装置

    公开(公告)号：US09136389B2

    公开(公告)日：2015-09-15

    申请号：US12581200

    申请日：2009-10-19

    申请人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Shunichi Ito ,  Junichiro Sakata

    发明人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Shunichi Ito ,  Junichiro Sakata

    IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/45 ,  H01L27/12

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/78618

    摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.

    摘要翻译： 目的是控制氧化物半导体的组成和缺陷。 另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。 氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数） 小于50），还含有氢。 在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。 此外，氧化物半导体具有非晶结构。 这里，n优选为大于或等于50，更优选小于10的非整数。

    Display device and method for manufacturing the same
    4.
    发明授权
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号：US08115883B2

    公开(公告)日：2012-02-14

    申请号：US12861190

    申请日：2010-08-23

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

    IPC分类号： G02F1/136

    CPC分类号： H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

    摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

    摘要翻译： 本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。

    Semiconductor device and manufacturing method thereof
    5.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08742422B2

    公开(公告)日：2014-06-03

    申请号：US12871148

    申请日：2010-08-30

    申请人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

    发明人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

    IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

    CPC分类号： H01L27/124 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1255

    摘要： The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

    摘要翻译： 半导体器件包括驱动器电路部分，其包括驱动器电路和包括像素的像素部分。 像素包括具有透光性的栅极电极层，栅极绝缘层，源极电极层和漏极电极层，其各自具有设置在栅极绝缘层上的透光性，覆盖顶表面的氧化物半导体层和 源极电极层和漏极电极层的侧面，并且在栅电极层之间设置有栅极绝缘层，导电层设置在氧化物半导体层的一部分上，并且具有比源极电极层和漏极 电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。

    Semiconductor device and method for manufacturing the same
    8.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08912541B2

    公开(公告)日：2014-12-16

    申请号：US12848397

    申请日：2010-08-02

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Eriko Nishida

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Eriko Nishida

    IPC分类号： H01L29/12 ,  H01L27/12 ,  H01L29/45

    CPC分类号： H01L29/45 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124

    摘要： One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.

    摘要翻译： 本发明的一个目的是增加半导体器件的开口率。 像素部分和驱动电路设置在一个基板上。 像素部中的第一薄膜晶体管（TFT）包括：在基板上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的氧化物半导体层; 氧化物半导体层上的源极和漏极电极层; 栅极绝缘层，氧化物半导体层，源极和漏极电极层上的与氧化物半导体层的一部分接触的保护绝缘层; 以及保护绝缘层上的像素电极层。 像素部分具有透光性。 此外，驱动电路中的第二TFT的源极和漏极电极层的材料与第一TFT的材料不同。

    Oxide semiconductor device
    9.
    发明授权
    Oxide semiconductor device 有权
    氧化物半导体器件

    公开(公告)号：US08421067B2

    公开(公告)日：2013-04-16

    申请号：US12846572

    申请日：2010-07-29

    申请人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Junichiro Sakata

    发明人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Junichiro Sakata

    IPC分类号： H01L29/12

    CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L29/7869

    摘要： A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.

    摘要翻译： 提供具有能够充分降低寄生电容的结构的半导体器件。 此外，提高了驱动电路中薄膜晶体管的操作速度。 在其中氧化物绝缘层与氧化物半导体层中的沟道形成区域接触的底栅薄膜晶体管中，以与它们不重叠的方式形成源电极层和漏电极层 栅电极层。 因此，栅极电极层与源电极层之间以及栅极电极层和漏极电极层之间的距离增加; 因此，可以减小寄生电容。

    Method for manufacturing semiconductor device including oxide semiconductor film
    10.
    发明授权
    Method for manufacturing semiconductor device including oxide semiconductor film 有权
    包括氧化物半导体膜的半导体器件的制造方法

    公开(公告)号：US08900916B2

    公开(公告)日：2014-12-02

    申请号：US12832329

    申请日：2010-07-08

    申请人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Kosei Noda ,  Hiroki Ohara ,  Toshinari Sasaki ,  Junichiro Sakata

    发明人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Kosei Noda ,  Hiroki Ohara ,  Toshinari Sasaki ,  Junichiro Sakata

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66969 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/7869

    摘要： A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

    摘要翻译： 一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。 在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物 进行半导体层（脱水或脱氢的热处理）。 氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的水分等杂质与氧化物半导体层 减少了