公开(公告)号：US09382611B2

公开(公告)日：2016-07-05

申请号：US13488626

申请日：2012-06-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： B28B1/00 ,  C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US20120325650A1

公开(公告)日：2012-12-27

申请号：US13603502

申请日：2012-09-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US08889477B2

公开(公告)日：2014-11-18

申请号：US13603484

申请日：2012-09-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： H01L21/00 ,  C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 制造包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US20120312681A1

公开(公告)日：2012-12-13

申请号：US13488626

申请日：2012-06-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： C23C14/34 ,  B28B1/00

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US09660092B2

公开(公告)日：2017-05-23

申请号：US13592942

申请日：2012-08-23

申请人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki ,  Shunpei Yamazaki

发明人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78696

摘要： Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.

公开(公告)号：US09252279B2

公开(公告)日：2016-02-02

申请号：US13592870

申请日：2012-08-23

申请人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

发明人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/78606

摘要： To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density of higher than or equal to 3.2 g/cm3.

摘要翻译： 提供一种具有稳定的电特性并具有高可靠性的氧化物半导体的半导体装置。 提供制造半导体器件的方法。 半导体器件包括栅电极，形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的氧化物半导体膜，形成在氧化物半导体膜上的源电极和漏电极以及保护膜。 保护膜包括金属氧化物膜，并且金属氧化物膜具有高于或等于3.2g / cm 3的膜密度。

公开(公告)号：US09614095B2

公开(公告)日：2017-04-04

申请号：US13568451

申请日：2012-08-07

申请人： Kenichi Okazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama

发明人： Kenichi Okazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama

IPC分类号： H01L29/78 ,  H01L29/786

CPC分类号： H01L29/7869

摘要： An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc (IGZO) and a particle of indium oxide; a gate electrode overlapping with a channel formation region in the oxide semiconductor layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode overlapping with a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top-gate oxide semiconductor transistor or a bottom-gate oxide semiconductor transistor. The oxide semiconductor layer may be formed over or below the source electrode and the drain electrode.

公开(公告)号：US09753401B2

公开(公告)日：2017-09-05

申请号：US15182088

申请日：2016-06-14

申请人： Masayuki Yamane ,  Takeroh Kurenuma ,  Masahiro Watanabe

发明人： Masayuki Yamane ,  Takeroh Kurenuma ,  Masahiro Watanabe

IPC分类号： G03G15/08

CPC分类号： G03G15/0865 ,  G03G15/0872

摘要： A powder container includes a rotatable powder storage to store powder for image formation, a conveyor to transport the powder inside the powder storage, and a scooping portion to scoop the powder inside the powder storage. The conveyor transports the powder in a powder conveyance direction parallel to a rotation axis of the powder storage toward an opening at one end of the powder storage. The scooping portion causes the powder to flow to the opening. The scooping portion includes a scooping face extending from an inner face of the powder storage toward the rotation axis of the powder storage, and a rim disposed along an inner end of the scooping face in a diameter direction of the powder storage, and at least a portion of the rim protruding downstream beyond the scooping face in a rotation direction of the powder storage.

公开(公告)号：US09507291B2

公开(公告)日：2016-11-29

申请号：US14887025

申请日：2015-10-19

申请人： Tetsuro Hirota ,  Hiroshi Hosokawa ,  Shunji Katoh ,  Masayuki Yamane ,  Masahiro Watanabe ,  Shingo Nishizaki

发明人： Tetsuro Hirota ,  Hiroshi Hosokawa ,  Shunji Katoh ,  Masayuki Yamane ,  Masahiro Watanabe ,  Shingo Nishizaki

IPC分类号： G03G15/08 ,  G01N27/72

CPC分类号： G03G15/0829 ,  G01N27/72 ,  G03G15/0848 ,  G03G15/0853

摘要： A magnetic permeability detector includes an LC oscillator circuit including a coil and a capacitor; and a resistor connected in series with the coil.

公开(公告)号：US09488500B2

公开(公告)日：2016-11-08

申请号：US14111012

申请日：2011-04-18

申请人： Wataru Tsujita ,  Kenji Inomata ,  Masahiro Watanabe ,  Masahiro Shikai

发明人： Wataru Tsujita ,  Kenji Inomata ,  Masahiro Watanabe ,  Masahiro Shikai

IPC分类号： G01J4/00 ,  G01S13/00 ,  G01D5/34

CPC分类号： G01D5/345

摘要： A reflector apparatus includes reflectors, which respectively radiate reflected waves in predetermined polarization directions. A polarized wave information reading circuit fixed to a moving body radiates a radio wave toward the reflecting apparatus from a transmitting antenna, receives reflected waves from the reflecting apparatus, and generates a received level difference signal that corresponds to a polarization direction of the received reflected waves. A position calculating circuit calculates a position of the polarized wave information reading circuit based on the received level difference signal.

摘要翻译： 反射器装置包括反射器，其分别以预定的偏振方向辐射反射波。 固定到移动体的偏振波信息读取电路从发送天线朝向反射装置发射无线电波，接收来自反射装置的反射波，并生成与所接收的反射波的偏振方向对应的接收电平差信号 。 位置计算电路基于接收到的电平差信号来计算偏振波信息读取电路的位置。