公开(公告)号：US06795480B1

公开(公告)日：2004-09-21

申请号：US09662704

申请日：2000-09-15

申请人： Shusuke Kaya ,  Takao Ninomiya ,  Michio Okubo ,  Seiji Uchiyama

发明人： Shusuke Kaya ,  Takao Ninomiya ,  Michio Okubo ,  Seiji Uchiyama

IPC分类号： H01S308

CPC分类号： H01S5/028

摘要： A semiconductor laser device is formed by laminating optical confinement layers and active layers so as to dispose each of said active layers between said optical confinement layers, wherein one of the opposite ends perpendicular to the junction planes of the individual layers in the semiconductor multi-layer film is coated with a low reflection film and the other of the ends is coated with a high reflection film, wherein the low reflection film is an Al2O3 film having a resistivity of 1×1012 &OHgr;·m or more, preferably 1×1013 &OHgr;·m or more, and having a stoichiometric ratio composition, which is deposited by, for example, an electron cyclotron resonance sputtering process. The present invention has realized a semiconductor laser device exhibiting a prolonged duration of operating life and having high driving reliability, which is advantageous in that a catastrophic optical damage hardly occurs and a lowering of the optical output after driving at a constant current is suppressed, and thus, it is preferably used as an optical transmitter for the optical communication.

摘要翻译： 通过层叠光学限制层和有源层来形成半导体激光器件，以将每个所述有源层设置在所述光限制层之间，其中相对端中的一个垂直于半导体多层中的各个层的结面 薄膜涂覆有低反射膜，另一端涂覆有高反射膜，其中低反射膜是电阻率为1×10 12Ω·m或更大，优选1×10 13的Al 2 O 3膜。 Ωm以上，并且具有通过例如电子回旋共振溅射法沉积的化学计量比组成。 本发明实现了延长使用寿命并具有高驱动可靠性的半导体激光器件，其优点在于几乎不发生灾难性的光学损伤，并且抑制了以恒定电流驱动后的光输出的降低，以及 因此，优选用作光通信的光发射机。

公开(公告)号：US4812551A

公开(公告)日：1989-03-14

申请号：US118041

申请日：1987-11-09

申请人： Fumio Oi ,  Haruyoshi Osaki ,  Akihiro Furuta ,  Yukikazu Uemura ,  Takao Ninomiya ,  Yasunori Uetani ,  Makoto Hanabata

发明人： Fumio Oi ,  Haruyoshi Osaki ,  Akihiro Furuta ,  Yukikazu Uemura ,  Takao Ninomiya ,  Yasunori Uetani ,  Makoto Hanabata

IPC分类号： G03C1/72 ,  C08G8/00 ,  C08G8/08 ,  G03F7/023 ,  C08G8/04

CPC分类号： C08G8/00 ,  C08G8/08 ,  G03F7/0236

摘要： A novolak resin for a positive photoresist is provided herein, which resin is produced by the addition condensation reaction of a phenol with formaldehyde. This novolak resin has improved heat resistant and sensitivity properties and the thickness retention of the novolak resins are very high. The novolak resins are characterized in that the area ratio of the gel permeation chromatographic pattern (GPC) as measured by the use of a UV(254 nm) detector, is as follows: a range wherein the molecular weight, calculated as polystyrene, is from 150 to less than 500, not including a phenol and the unreacted monomer, is from 8 to 35%, hereinafter referred to as an A region, the range wherein the molecular weight calculated as polystyrene is from 500 to less than 5000 is from 0 to 30%, hereinafter referred to as a B region, and the range wherein the molecular weight calculated as polystyrene exceeds 5000 is from 35 to 92%, hereinafter referred to as the C region, and wherein the ratio of the B region to the A region is 2.50 or less.

摘要翻译： 本文提供了一种用于正性光致抗蚀剂的酚醛清漆树脂，该树脂通过苯酚与甲醛的加成缩合反应制备。 该酚醛清漆树脂具有改善的耐热性和灵敏度性能，并且酚醛清漆树脂的厚度保持率非常高。 酚醛清漆树脂的特征在于通过使用UV（254nm）检测器测量的凝胶渗透色谱图（GPC）的面积比如下：其中以聚苯乙烯计算的分子量来自 150〜小于500，不包括苯酚和未反应单体，为8〜35％，以下称为A区，其中以聚苯乙烯计算的分子量为500〜5000以下的范围为0〜 30％，以下称为B区，其中以聚苯乙烯计算的分子量超过5000的范围为35〜92％，以下称为C区，其中B区与A区的比例 是2.50以下。

公开(公告)号：US5929461A

公开(公告)日：1999-07-27

申请号：US877768

申请日：1997-06-17

申请人： Takeharu Yamaguchi ,  Michio Ohkubo ,  Takao Ninomiya

发明人： Takeharu Yamaguchi ,  Michio Ohkubo ,  Takao Ninomiya

IPC分类号： H01S5/00 ,  H01S5/183 ,  H01L29/06 ,  H01L33/00

CPC分类号： H01L33/105 ,  H01S5/1838 ,  H01S5/0207 ,  H01S5/18308 ,  H01S5/3202 ,  H01S5/32358

摘要： A surface emission semiconductor laser device has a semiconductor laminate mirror constituted of a plurality of pairs of InGaAS/InAlP films epitaxially grown on a GaAs or InGaAs substrate and a laser element bonded to the laminate mirror. The InAlP films of the laminate mirror are lattice-matched or not lattice-matched due to the amount of Al in the InAlP films. The laminate mirror has a high relative refractive index between the InGaAs and InAlP films and thus has a high reflectance to thereby improve the emission efficiency of the surface emission laser device.

摘要翻译： 表面发射半导体激光器件具有由在GaAs或InGaAs衬底上外延生长的多对InGaAS / InAlP膜和结合到层叠反射镜的激光元件构成的半导体层叠反射镜。 由于InAlP膜中Al的量，层压反射镜的InAlP膜是晶格匹配的或不是晶格匹配的。 层叠反射镜在InGaAs和InAlP膜之间具有高相对折射率，因此具有高反射率，从而提高了表面发射激光器件的发射效率。

公开(公告)号：US5809078A

公开(公告)日：1998-09-15

申请号：US855095

申请日：1997-05-13

申请人： Hideaki Tani ,  Takao Ninomiya

发明人： Hideaki Tani ,  Takao Ninomiya

IPC分类号： H04L12/801 ,  H04L12/861 ,  H04L12/911 ,  H04L13/08 ,  H04L27/00

CPC分类号： H04L49/9078 ,  H04L49/90 ,  H04L49/9073

摘要： A relay node system, which receives a data stream having a series of data elements transmitted from a transmitting node and which re-outputs the data stream to a receiving node, comprises data receiving section for receiving the data stream transmitted from the transmitting node, storing section for temporarily storing data of the received data stream, and data transmitting section for reading the data stored in the storing section to be transmitted to the receiving node, wherein the storing section includes primary buffer section, having a high-speed memory, for temporarily storing data of the data stream, secondary buffer section having a memory capacity slower and larger than the primary buffer section, and data transfer section for executing a save processing and a restore processing, the save processing including processing for detecting danger of an overflow at an input side of the primary buffer section to transfer data from the primary buffer section to the secondary buffer section by a block unit, and the restore processing including processing transferring data saved to the secondary buffer section to the primary buffer section by a block unit for the data transmission by the data transmitting section.

摘要翻译： 一种中继节点系统，其接收具有从发送节点发送的一系列数据元素并且将数据流重新输出到接收节点的数据流，包括数据接收部分，用于接收从发送节点发送的数据流，存储 用于临时存储接收到的数据流的数据的部分，以及用于读取存储在存储部分中以发送到接收节点的数据的数据发送部分，其中存储部分包括具有高速存储器的初级缓冲器部分，用于暂时地 存储数据流的数据，具有慢于主缓冲区的存储容量的二次缓冲区，以及用于执行保存处理和恢复处理的数据传送部，所述保存处理包括用于检测在 主缓冲器部分的输入侧将数据从主缓冲器部分传送到次缓冲器sec 并且恢复处理包括通过数据发送部分的数据传输的块单元将保存到辅助缓冲器部分的数据传送到主缓冲器部分的处理。

公开(公告)号：US5757833A

公开(公告)日：1998-05-26

申请号：US742866

申请日：1996-11-01

申请人： Satoshi Arakawa ,  Norihiro Iwai ,  Takuya Ishikawa ,  Akihiko Kasukawa ,  Michio Ohkubo ,  Takao Ninomiya

发明人： Satoshi Arakawa ,  Norihiro Iwai ,  Takuya Ishikawa ,  Akihiko Kasukawa ,  Michio Ohkubo ,  Takao Ninomiya

IPC分类号： H01S5/16 ,  H01S5/227 ,  H01S5/343 ,  H01S3/19 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01S5/164 ,  H01S5/343 ,  H01S2302/00 ,  H01S5/2272 ,  H01S5/34306 ,  H01S5/34313

摘要： A semiconductor laser is produced by forming a laser activation section and a light emitting section having an InGaAsP layer as a quantum well on a GaAs substrate according to metal organic chemical vapor deposition by using a selective area growth mask, in such a manner that the laser activation section and the light emitting section have different film thicknesses. The laser activation section includes a laser activation layer whose oscillation wavelength is set to 0.8 to 1.1 .mu.m, and the light emitting section includes an optical waveguide layer having a broader forbidden band than the laser activation layer.

摘要翻译： 通过使用选择性区域生长掩模，通过使用选择性区域生长掩模，通过在GaAs衬底上形成激光激活部分和具有InGaAsP层作为量子阱的发光部分来制造半导体激光器，激光器 激活部分和发光部分具有不同的膜厚度。 激光激活部包括振荡波长设定为0.8〜1.1μm的激光激活层，发光部具有比激光活化层更宽的禁带宽度的光波导层。