摘要:
A method for forming an integrated circuit system is provided including forming a substrate having a core region and a periphery region, forming a charge storage stack over the substrate in the core region, forming a gate stack with a stack header having a metal portion over the substrate in the periphery region, and forming a memory system with the stack header over the charge storage stack.
摘要:
A method for forming an integrated circuit system is provided including forming a substrate; forming a stack over the substrate, the stack having a sidewall and formed from a charge trap layer and a semi-conducting layer; and slot plane antenna oxidizing the stack for forming a protection enclosure having a protection layer along the sidewall.
摘要:
A memory cell system is provided including forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, and slot plane antenna plasma oxidizing the charge trap layer for forming a second insulator layer.
摘要:
A memory cell system is provided including a first insulator layer over a semiconductor substrate, a charge trap layer over the first insulator layer, and slot where the charge trap layer includes a second insulator layer having the characteristic of being grown.
摘要:
A memory system includes a substrate, forming a first insulator over the substrate, forming a charge trap layer, having a composition for setting a predetermined electrical charge level, over the first insulator, and forming a second insulator over the charge trap layer.
摘要:
An integrated circuit memory system that includes: providing a substrate; forming a silicon rich charge storage layer over the substrate; forming a first isolation trench through the silicon rich charge storage layer in a first direction; and forming a second isolation trench through the silicon rich charge storage layer in a second direction.
摘要:
An integrated circuit memory system that includes: providing a substrate; forming a silicon rich charge storage layer over the substrate; forming a first isolation trench through the silicon rich charge storage layer in a first direction; and forming a second isolation trench through the silicon rich charge storage layer in a second direction.
摘要:
A method for fabricating a memory device with a self-aligned trap layer and rounded active region corners is disclosed. In the present invention, an STI process is performed before any of the charge-trapping and top-level layers are formed. Immediately after the STI process, the sharp corners of the active regions are exposed. Because these sharp corners are exposed at this time, they are available to be rounded through any number of known rounding techniques. Rounding the corners improves the performance characteristics of the memory device. Subsequent to the rounding process, the charge-trapping structure and other layers can be formed by a self-aligned process.
摘要:
A memory cell system is provided forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, forming an intermediate layer over the charge trap layer, and forming a second insulator layer with the intermediate layer.
摘要:
A memory cell system is provided forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, forming an intermediate layer over the charge trap layer, and forming a second insulator layer with the intermediate layer.