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1.发明授权Fabricating photonics devices fully integrated into a CMOS manufacturing process 有权制造完全集成到CMOS制造工艺中的光子器件公开(公告)号：US08633067B2
公开(公告)日：2014-01-21
申请号：US12951597
申请日：2010-11-22
申请人： Solomon Assefa , William M. J. Green , Yurii A. Vlasov , Min Yang
发明人： Solomon Assefa , William M. J. Green , Yurii A. Vlasov , Min Yang
IPC分类号： H01L21/00
CPC分类号： H01L21/8238 , G02B6/136 , H01L21/26513 , H01L21/2658 , H01L21/76283 , H01L31/02327 , H01L31/103 , H01L31/105
摘要： Disclosed are process enhancements to fully integrate the processing of a photonics device into a CMOS manufacturing process flow. A CMOS wafer may be divided into different portions. One of the portions is for the CMOS devices and one or more other portions are for the photonics devices. The photonics devices include a ridged waveguide and a germanium photodetector. The germanium photodetector may utilize a seeded crystallization from melt process so there is more flexibility in the processing of the germanium photodetector.
摘要翻译： 公开了将光子器件的处理完全集成到CMOS制造工艺流程中的过程增强。 CMOS晶片可以被分成不同的部分。 其中一个部分用于CMOS器件，一个或多个其它部分用于光子器件。 光子器件包括脊状波导和锗光电检测器。 锗光电探测器可以利用来自熔融法的接种结晶，因此在锗光电探测器的处理中具有更大的灵活性。
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2.发明授权Fabrication of a localized thick box with planar oxide/SOI interface on bulk silicon substrate for silicon photonics integration 失效在硅硅衬底上制造具有平面氧化物/ SOI界面的局部厚盒，用于硅光子学集成公开(公告)号：US08772902B2
公开(公告)日：2014-07-08
申请号：US13451141
申请日：2012-04-19
IPC分类号： H01L21/70
CPC分类号： G02B6/13 , H01L21/76232 , H01L21/76289
摘要： Line trenches are formed in a stack of a bulk semiconductor substrate and an oxygen-impermeable layer such that the depth of the trenches in the bulk semiconductor substrate is greater than the lateral spacing between a pair of adjacently located line trenches. Oxygen-impermeable spacers are formed on sidewalls of the line trenches. An isotropic etch, either alone or in combination with oxidation, removes a semiconductor material from below the oxygen-impermeable spacers to expand the lateral extent of expanded-bottom portions of the line trenches, and to reduce the lateral spacing between adjacent expanded-bottom portions. The semiconductor material around the bottom portions is oxidized to form a semiconductor oxide portion that underlies multiple oxygen-impermeable spacers. Semiconductor-on-insulator (SOI) portions are formed above the semiconductor oxide portion and within the bulk semiconductor substrate.
摘要翻译： 线槽形成在体半导体衬底和不透氧层的堆叠中，使得体半导体衬底中的沟槽的深度大于一对相邻定位的线沟槽之间的横向间隔。 不透水间隔物形成在线沟槽的侧壁上。 单独或与氧化组合的各向同性蚀刻从氧不透性间隔物的下面去除半导体材料，以扩大线沟槽的扩展底部的横向范围，并且减小相邻扩展底部之间的横向间隔 。 底部周围的半导体材料被氧化以形成在多个不透氧隔离物下面的半导体氧化物部分。 半导体绝缘体（SOI）部分形成在半导体氧化物部分之上和体半导体衬底内。
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公开(公告)号：US08637335B1
公开(公告)日：2014-01-28
申请号：US13586187
申请日：2012-08-15
IPC分类号： H01L21/00
CPC分类号： H01L27/1203
摘要： A semiconductor structure includes a photonic modulator and a field effect transistor on a same substrate. The photonic modulator includes a modulator semiconductor structure and a semiconductor contact structure employing a same semiconductor material as a gate electrode of a field effect transistor. The modulator semiconductor structure includes a lateral p-n junction, and the semiconductor contact structure includes another lateral p-n junction. To form this semiconductor structure, the modulator semiconductor structure in the shape of a waveguide and an active region of a field effect transistor region can be patterned in a semiconductor substrate. A gate dielectric layer is formed on the modulator semiconductor structure and the active region, and is subsequently removed from the modulator semiconductor structure. A semiconductor material layer is deposited, patterned, and doped with patterns to form a gate electrode for the field effect transistor and the semiconductor contact structure for the waveguide.
摘要翻译： 半导体结构包括在相同衬底上的光子调制器和场效应晶体管。 光调制器包括调制器半导体结构和使用与场效应晶体管的栅电极相同的半导体材料的半导体接触结构。 调制器半导体结构包括横向p-n结，并且半导体接触结构包括另一个侧向p-n结。 为了形成该半导体结构，可以在半导体衬底中构造波导形状的调制器半导体结构和场效应晶体管区的有源区。 栅极电介质层形成在调制器半导体结构和有源区上，随后从调制器半导体结构中去除。 沉积，图案化和掺杂半导体材料层以形成场效应晶体管的栅电极和用于波导的半导体接触结构。
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4.发明申请FARBRICATION OF A LOCALIZED THICK BOX WITH PLANAR OXIDE/SOI INTERFACE ON BULK SILICON SUBSTRATE FOR SILICON PHOTONICS INTEGRATION 失效用于硅光子晶体管集成的大片硅基板上的平面氧化物/ SOI界面的本地化厚度薄膜的分析公开(公告)号：US20130277795A1
公开(公告)日：2013-10-24
申请号：US13451141
申请日：2012-04-19
IPC分类号： H01L29/00 , H01L21/762
CPC分类号： G02B6/13 , H01L21/76232 , H01L21/76289
摘要： Line trenches are formed in a stack of a bulk semiconductor substrate and an oxygen-impermeable layer such that the depth of the trenches in the bulk semiconductor substrate is greater than the lateral spacing between a pair of adjacently located line trenches. Oxygen-impermeable spacers are formed on sidewalls of the line trenches. An isotropic etch, either alone or in combination with oxidation, removes a semiconductor material from below the oxygen-impermeable spacers to expand the lateral extent of expanded-bottom portions of the line trenches, and to reduce the lateral spacing between adjacent expanded-bottom portions. The semiconductor material around the bottom portions is oxidized to form a semiconductor oxide portion that underlies multiple oxygen-impermeable spacers. Semiconductor-on-insulator (SOI) portions are formed above the semiconductor oxide portion and within the bulk semiconductor substrate.
摘要翻译： 线槽形成在体半导体衬底和不透氧层的堆叠中，使得体半导体衬底中的沟槽的深度大于一对相邻定位的线沟槽之间的横向间隔。 不透水间隔物形成在线沟槽的侧壁上。 单独或与氧化组合的各向同性蚀刻从氧不透性间隔物的下面去除半导体材料，以扩大线沟槽的扩展底部的横向范围，并且减小相邻扩展底部之间的横向间隔 。 底部周围的半导体材料被氧化以形成在多个不透氧隔离物下面的半导体氧化物部分。 半导体绝缘体（SOI）部分形成在半导体氧化物部分之上和体半导体衬底内。
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公开(公告)号：US08525264B1
公开(公告)日：2013-09-03
申请号：US13561738
申请日：2012-07-30
IPC分类号： H01L27/12
CPC分类号： H01L27/1203
摘要： A semiconductor structure includes a photonic modulator and a field effect transistor on a same substrate. The photonic modulator includes a modulator semiconductor structure and a semiconductor contact structure employing a same semiconductor material as a gate electrode of a field effect transistor. The modulator semiconductor structure includes a lateral p-n junction, and the semiconductor contact structure includes another lateral p-n junction. To form this semiconductor structure, the modulator semiconductor structure in the shape of a waveguide and an active region of a field effect transistor region can be patterned in a semiconductor substrate. A gate dielectric layer is formed on the modulator semiconductor structure and the active region, and is subsequently removed from the modulator semiconductor structure. A semiconductor material layer is deposited, patterned, and doped with patterns to form a gate electrode for the field effect transistor and the semiconductor contact structure for the waveguide.
摘要翻译： 半导体结构包括在相同衬底上的光子调制器和场效应晶体管。 光调制器包括调制器半导体结构和使用与场效应晶体管的栅电极相同的半导体材料的半导体接触结构。 调制器半导体结构包括横向p-n结，并且半导体接触结构包括另一个侧向p-n结。 为了形成该半导体结构，可以在半导体衬底中构造波导形状的调制器半导体结构和场效应晶体管区的有源区。 栅极电介质层形成在调制器半导体结构和有源区上，随后从调制器半导体结构中去除。 沉积，图案化和掺杂半导体材料层以形成场效应晶体管的栅电极和用于波导的半导体接触结构。
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公开(公告)号：US20140030835A1
公开(公告)日：2014-01-30
申请号：US13586187
申请日：2012-08-15
IPC分类号： H01L33/02
CPC分类号： H01L27/1203
摘要： A semiconductor structure includes a photonic modulator and a field effect transistor on a same substrate. The photonic modulator includes a modulator semiconductor structure and a semiconductor contact structure employing a same semiconductor material as a gate electrode of a field effect transistor. The modulator semiconductor structure includes a lateral p-n junction, and the semiconductor contact structure includes another lateral p-n junction. To form this semiconductor structure, the modulator semiconductor structure in the shape of a waveguide and an active region of a field effect transistor region can be patterned in a semiconductor substrate. A gate dielectric layer is formed on the modulator semiconductor structure and the active region, and is subsequently removed from the modulator semiconductor structure. A semiconductor material layer is deposited, patterned, and doped with patterns to form a gate electrode for the field effect transistor and the semiconductor contact structure for the waveguide.
摘要翻译： 半导体结构包括在相同衬底上的光子调制器和场效应晶体管。 光调制器包括调制器半导体结构和使用与场效应晶体管的栅电极相同的半导体材料的半导体接触结构。 调制器半导体结构包括横向p-n结，并且半导体接触结构包括另一个侧向p-n结。 为了形成该半导体结构，可以在半导体衬底中构造波导形状的调制器半导体结构和场效应晶体管区的有源区。 栅极电介质层形成在调制器半导体结构和有源区上，随后从调制器半导体结构中去除。 沉积，图案化和掺杂半导体材料层以形成场效应晶体管的栅电极和用于波导的半导体接触结构。
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